Formation of CdS/Sn Superlattice Nanowires and Room-Temperature Microcavity Stimulated Emission
Source abstract
Abstract
Semiconductor superlattice nanowires are promising candidates for multifunctional optoelectronic devices due to their periodic structure and compositional modulation. However, the realization of superlattice nanowires for multiple microcavity nanolasers remains challenging. Here, we report a rational strategy for the synthesis of CdS/Sn superlattice nanowires by a chemical vapor deposition (CVD) approach. Structural characterization reveals periodic CdS and Sn segments along the nanowire axis. Spatially resolved microphotoluminescence measurements confirm multiple microcavities between the adjacent Sn nodes in a single nanowire. Additionally, a room-temperature single-mode laser is clearly observed from these superlattice nanowires, which shows a strong stimulated emission with a high-quality factor (∼1218). These findings suggest that the prepared CdS/Sn superlattice nanowires provide a versatile platform for light–matter interaction studies and can be used as an excellent optical gain medium for high-quality factor lasers.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Nanowire Synthesis and Applications · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Physics and Optoelectronics
Taiyuan University of Technology
College of Physics and Electronics Engineering
Shanxi University
Department of Materials Science and Engineering
City University of Hong Kong
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China · Science and Technology Major Special Project of Shanxi Province
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