High-Throughput Preparation of Size-Tunable BiFeO₃ Nanoislands with Topological Polar Structures for High-Density Memory

Topological polar structures found in ferroelectric nanoislands hold great promise for next-generation information storage devices due to their unique properties and potential for high-density data storage. However, traditional fabrication methods, such as electron-beam lithography, face significant challenges in achieving reproducibility and consistent domain structures with low cost, limiting their practical application. In this study, we proposed a high-throughput synthesis approach to enhance the research efficiency of topological ferroelectric domains in BiFeO 3 nanoislands. By designing a temperature gradient during the film growth process, we successfully obtained self-assembled BiFeO 3 nanoislands with various sizes (150–800 nm) as well as domain structures featuring temperature gradients. The topological ferroelectric domain configurations evolve gradually from Solomon rings-like to 4-fold, and eventually, multifold center-type domain with the nanoisland size increasing, while the smaller nanoisland shows a higher conduction. Our findings reveal the relationships between temperature, size, density, and ferroelectric domain configuration, providing valuable insights into the formation and growth mechanisms of BiFeO 3 nanoislands and precise control of topological ferroelectric domains.