Nanosegregated amorphous AlBN2 alloy
Source abstract
Abstract
We use ab initio molecular dynamics simulations to create an amorphous AlBN2 model and find that it consists of nanosegregated two-dimensional hexagonal BN-like and tetrahedral AlN-like domains. These domains are somewhat homogenously distributed in the network. There exist no chemical disorder and Al–B bonding. Amorphous AlBN2 is a semiconductor having a theoretical band gap energy of ∼2.24 eV, larger than that of amorphous AlN and BN systems. This amorphous nitride might find some applications as an electronic material.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Boron and Carbon Nanomaterials Research · GaN-based semiconductor devices and materials · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science & Nanotechnology Engineering, Abdullah Gül University, Kayseri, Turkey
Funding
Scientific and Technical Research Council of Turkey
References (39)
Show source-provided references
1. 10.1021/cm950108r10.1021/cm950108r ↗
2. 10.1116/1.58589710.1116/1.585897 ↗
3. 10.1088/0022-3727/31/20/00110.1088/0022-3727/31/20/001 ↗
4. Pierson H.O · 1996
5. Kung P. · Opto-Electron. Rev. · 2000 · 8 · 201
6. 10.1063/1.315579810.1063/1.3155798 ↗
7. 10.1016/S0079-6727(96)00002-X10.1016/S0079-6727(96)00002-X ↗
8. Mudassir S. · J. Appl. Emerg. Sci. · 2016 · 4 · 141
9. 10.1038/nphoton.2007.29310.1038/nphoton.2007.293 ↗
10. 10.1016/j.tsf.2011.08.09010.1016/j.tsf.2011.08.090 ↗
11. 10.1016/S0040-6090(96)08884-010.1016/S0040-6090(96)08884-0 ↗
12. 10.1016/j.tsf.2007.07.16710.1016/j.tsf.2007.07.167 ↗
13. 10.1002/(ISSN)1096-991810.1002/(ISSN)1096-9918 ↗
14. 10.1016/S0040-6090(00)01435-810.1016/S0040-6090(00)01435-8 ↗
15. 10.1016/j.apsusc.2010.05.04310.1016/j.apsusc.2010.05.043 ↗
16. 10.1002/(ISSN)1610-164210.1002/(ISSN)1610-1642 ↗
17. 10.1002/pssc.20030354910.1002/pssc.200303549 ↗
18. 10.1016/j.ssc.2007.08.01710.1016/j.ssc.2007.08.017 ↗
19. 10.1016/j.jcrysgro.2014.09.03010.1016/j.jcrysgro.2014.09.030 ↗
20. 10.1016/S1386-9477(02)00309-010.1016/S1386-9477(02)00309-0 ↗
21. 10.1002/pssa.20140019910.1002/pssa.201400199 ↗
22. 10.1063/1.495239110.1063/1.4952391 ↗
23. 10.1515/znb-2015-014910.1515/znb-2015-0149 ↗
24. 10.1016/j.jpcs.2015.06.01010.1016/j.jpcs.2015.06.010 ↗
25. Riane R. · Z. Naturforsch. B · 2008 · 63 · 106910.1515/znb-2008-0909 ↗
26. 10.12693/APhysPolA.122.74810.12693/APhysPolA.122.748 ↗
27. 10.1063/1.131679010.1063/1.1316790 ↗
28. 10.1103/PhysRevB.53.R1044110.1103/PhysRevB.53.R10441 ↗
29. 10.1103/PhysRevB.43.199310.1103/PhysRevB.43.1993 ↗
30. 10.1103/PhysRevA.38.309810.1103/PhysRevA.38.3098 ↗
31. 10.1103/PhysRevB.37.78510.1103/PhysRevB.37.785 ↗
32. 10.1063/1.32869310.1063/1.328693 ↗
33. 10.1016/0925-8388(93)90007-A10.1016/0925-8388(93)90007-A ↗
34. 10.1201/9780203908181.ch310.1201/9780203908181.ch3 ↗
35. R.W.G. Wyckoff, Crystal Structures, 2nd ed., Vol. 1, John Wiley, Interscience, New York, 1963, pp. 85–237.
36. 10.1107/S002188981103897010.1107/S0021889811038970 ↗
37. 10.1080/14786435.2016.118383010.1080/14786435.2016.1183830 ↗
38. 10.1111/jace.2016.99.issue-510.1111/jace.2016.99.issue-5 ↗
39. 10.1103/PhysRevB.84.07521610.1103/PhysRevB.84.075216 ↗