journal article·2023-09-08

Microneural Network System Based on MoS2/h-BN/Graphene van der Waals Heterojunction Transistor

Xiangkai Liu, Zhongzheng Wang, Hao Huang, Congye Liu, Wencheng Niu, Zhengdao Xie, Dandan Hao, Houqiang Fu, Xingqiang Liu, Xuming Zou, Fukai Shan, Zhenyu Yang

ACS Applied Nano Materials· Volume 6· Issue 17
Publisher page

Abstract

The integration of data storage and computing capabilities into a single physical component has led to the development of a microneuronal network system with high precision and speed rates. To achieve this system architecture, bold innovations in the underlying hardware structure and neural network architecture are required. This article introduces an optoelectronic storage device based on the MoS 2 /h-BN/graphene van der Waals heterojunction transistor. At room temperature, the transistor exhibits an electron mobility of up to 340 cm 2 /(V·s) and a large storage window due to its unique van der Waals heterojunction. The transistor’s reconfigurable nonvolatile optoelectronic properties enable the construction of logic gates, including “AND”, “OR”, “NAND”, and “NOR”. Leveraging these logic gates, a microneural network system is created that simulates future machine vision applications. The system achieves a remarkable recognition rate of 96.3% for images in a multidimensional color space, demonstrating the significant development potential of the microneural network system based on the MoS 2 /h-BN/graphene vdW heterojunction transistor in future machine vision.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Advanced Memory and Neural Computing · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

College of Electronics and Information, Qingdao University, Qingdao 266071, China

Shanghai Police College, Shanghai 200137, China

Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, Guangxi, China

College of Information and Communication Engineering, Harbin Engineering University, Harbin 150001, China

School of Physics and Electronics, Hunan University, Changsha 410082, China

School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, United States

Funding

National Natural Science Foundation of China · State Key Laboratory of Processing for Nonferrous Metal and Featured Materials, Guangxi University · Science and Technology Base and talent Special project of Guangxi

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