Tuning the Magnetization Direction and Valley Splitting of Monolayer Ferrovalley CrISe: Implications for Spintronics and Valleytronics Devices
Source abstract
Abstract
Modulating the magnetization direction effectively influences the valley splitting properties, offering an approach for designing valley-electronic-based devices. This work uses first-principles calculations to modulate the magnetic anisotropy of the ferrovalley CrISe monolayer semiconductor through strain (uniaxial and biaxial) and electron correlation effects. These approaches enable tuning of the easy magnetization axis from in-plane to out-of-plane, directly influencing valley splitting. It is worth noting that uniaxial strain adjusts the easy magnetization axis to a precise angle, allowing for the fine control of both the magnetization direction and valley splitting. This study provides a certain theoretical foundation and technical pathway for designing spin-valley electronic devices with broad application potential.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Heusler alloys: electronic and magnetic properties · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics and Technology, State Key Laboratory of Chemistry and Utilization of Carbon Based Energy Resources
Xinjiang University
School of Physics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, and Hunan Key Laboratory of Nanophotonics and Devices
Central South University
State Key Laboratory of Powder Metallurgy, and Powder Metallurgy Research Institute
Funding
State Key Laboratory of Powder Metallurgy · Natural Science Foundation of Hunan Province · Natural Science Foundation of Xinjiang Uygur Autonomous Region · China Postdoctoral Science Foundation · Xinjiang Tianchi Doctoral Project · National Natural Science Foundation of China · Xinjiang University
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