Advances in atomic layer deposited high-κ inorganic materials for gate dielectrics engineering of two-dimensional MoS2 field effect transistors
Source abstract
Abstract
Molybdenum disulfide (MoS2) has been one of the most promising members of transition-metal dichalcogenides materials. Attributed to the excellent electrical performance and special physical properties, MoS2 has been broadly applied in semiconductor devices, such as field effect transistors (FETs). At present, the exploration of further improving the performance of MoS2-based FETs (such as increasing the carrier mobility and scaling) has encountered a bottleneck, and the application of high-κ gate dielectrics has become an effective approach to change this situation. Atomic layer deposition (ALD) enables high-quality integration of MoS2 and high-κ gate dielectrics at the atomic level. In this review, we summarize recent advances in the fabrication of two-dimensional MoS2 FETs using ALD high-κ materials as gate dielectrics. We first briefly discuss the research background of MoS2 FETs. Second, we expound the electrical and other essential properties of high-κ gate dielectrics, which are essential to the performance of MoS2 FETs. Finally, we focus on the advances in fabricating MoS2 FETs with ALD high-κ gate dielectrics on MoS2, as well as the optimized ALD processes. In addition, we also look forward to the development prospect of this field.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (100+)
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1. Yang LM, Kai SS, Philip WHS, Jong LL (2019) How 2D semiconductors could extend Moore’s law. Nature 567:169–170. https://doi.org/10.1038/d41586-019-00793-810.1038/d41586-019-00793-8 ↗
2. Liu Y, Duan X, Shin HJ, Park S, Huang Y, Duan X (2021) Promises and prospects of two-dimensional transistors. Nature 591:43–53. https://doi.org/10.1038/s41586-021-03339-z10.1038/s41586-021-03339-z ↗
3. Jin Y, Cheng M, Liu H, Ouzounian M, Hu TS, You B, Shao G, Liu X, Liu Y, Li H, Li S, Guan J, Liu S (2020) Na2SO4-regulated high-quality growth of transition metal dichalcogenides by controlling diffusion. Chem Mater 32:5616–5625. https://doi.org/10.1021/acs.chemmater.0c0108910.1021/acs.chemmater.0c01089 ↗
4. Late DJ, Liu B, Matte HSSR, Dravid VP, Rao CNR (2012) Hysteresis in single-layer MoS2 field effect transistors. ACS Nano 6:5635–5641. https://doi.org/10.1021/nn301572c10.1021/nn301572c ↗
5. Houssa M, Pantisano L, Ragnarsson LA, Degraeve R, Schram T, Pourtois G, De Gendt S, Groeseneken G, Heyns MM (2006) Electrical properties of high-κ gate dielectrics: challenges, current issues, and possible solutions. Mater Sci Eng R Rep 51:37–85. https://doi.org/10.1016/j.mser.2006.04.00110.1016/j.mser.2006.04.001 ↗
6. Ribes G, Mitard J, Denais M, Bruyere S, Monsieur F, Parthasarathy C, Vincent E, Ghibaudo G (2005) Re-view on high-κ dielectrics reliability issues. IEEE Trans Dev Mater Reliab 5:5–19. https://doi.org/10.1109/TDMR.2005.84523610.1109/TDMR.2005.845236 ↗
7. Choi JH, Mao Y, Chang JP (2011) Development of hafnium based high-κ materials—a review. Mater Sci Eng R Rep 72:97–136. https://doi.org/10.1016/j.mser.2010.12.00110.1016/j.mser.2010.12.001 ↗
8. Liu LN, Tang WM, Lai PT (2019) Advances in La-based high-κ dielectrics for MOS applications. Coatings 9:217. https://doi.org/10.3390/coatings904021710.3390/coatings9040217 ↗
9. Nam T, Seo S, Kim H (2020) Atomic layer deposition of a uniform thin film on two-dimensional transition metal dichalcogenides. J Vac Sci Technol A 38:030803. https://doi.org/10.1116/6.000006810.1116/6.0000068 ↗
10. Devaray P, Hatta SFWM, Wong YH (2022) An overview of conventional and new advancements in high kappa thin film deposition techniques in metal oxide semiconductor devices. J Mater Sci Mater Electron 33:7313–7348. https://doi.org/10.1007/s10854-022-07975-710.1007/s10854-022-07975-7 ↗
11. Danial WH, Norhisham NA, Ahmad Noorden AF, Abdul Majid Z, Matsumura K, Iqbal A (2021) A short review on electrochemical exfoliation of graphene and graphene quantum dots. Carbon Lett 31:371–388. https://doi.org/10.1007/s42823-020-00212-310.1007/s42823-020-00212-3 ↗
12. Morales Ibarra R, Goto M, García-Serna J, García Montes SM (2021) Graphene exfoliation with supercritical fluids. Carbon Lett 31:99–105. https://doi.org/10.1007/s42823-020-00153-x10.1007/s42823-020-00153-x ↗
13. Yao R, Zheng Z, Xiong M, Zhang X, Li X, Ning H, Fang Z, Xie W, Lu X, Peng J (2018) Low-temperature fabrication of sputtered high-κ HfO2 gate dielectric for flexible a-IGZO thin film transistors. Appl Phys Lett 112:103503. https://doi.org/10.1063/1.502208810.1063/1.5022088 ↗
14. Deng B, Liu Z, Peng H (2019) Toward mass production of CVD graphene films. Adv Mater 31:e1800996. https://doi.org/10.1002/adma.20180099610.1002/adma.201800996 ↗
15. Mathew EE, Manoj B (2022) Disorders in graphene: types, effects and control techniques—a review. Carbon Lett 32:431–450. https://doi.org/10.1007/s42823-021-00289-410.1007/s42823-021-00289-4 ↗
16. Zhang Y, Tan YW, Stormer HL, Kim P (2005) Experimental observation of the quantum Hall effect and Berry’s phase in graphene. Nature 438:201–204. https://doi.org/10.1038/nature0423510.1038/nature04235 ↗
17. Xu X, Liu C, Sun Z, Cao T, Zhang Z, Wang E, Liu Z, Liu K (2018) Interfacial engineering in graphene bandgap. Chem Soc Rev 47:3059–3099. https://doi.org/10.1039/c7cs00836h10.1039/c7cs00836h ↗
18. Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A (2011) Single-layer MoS2 transistors. Nat Nanotechnol 6:147–150. https://doi.org/10.1038/nnano.2010.27910.1038/nnano.2010.279 ↗
19. Imani Yengejeh S, Liu J, Kazemi SA, Wen W, Wang Y (2020) Effect of structural phases on mechanical properties of molybdenum disulfide. ACS Omega 5:5994–6002. https://doi.org/10.1021/acsomega.9b0436010.1021/acsomega.9b04360 ↗
20. Wang H, Lu Z, Xu S, Kong D, Cha JJ, Zheng G, Hsu PC, Yan K, Bradshaw D, Prinz FB, Cui Y (2013) Electrochemical tuning of vertically aligned MoS2 nanofilms and its application in improving hydrogen evolution reaction. Proc Natl Acad Sci U S A 110:19701–19706. https://doi.org/10.1073/pnas.131679211010.1073/pnas.1316792110 ↗
21. Wang S, Zhang D, Li B, Zhang C, Du Z, Yin H, Bi X, Yang S (2018) Ultrastable in-plane 1T–2H MoS2 heterostructures for enhanced hydrogen evolution reaction. Adv Energy Mater 8:1801345. https://doi.org/10.1002/aenm.20180134510.1002/aenm.201801345 ↗
22. Manzeli S, Ovchinnikov D, Pasquier D, Yazyev OV, Kis A (2017) 2D transition metal dichalcogenides. Nat Rev Mater 2:17033. https://doi.org/10.1038/natrevmats.2017.3310.1038/natrevmats.2017.33 ↗
23. Das S, Chen HY, Penumatcha AV, Appenzeller J (2013) High performance multilayer MoS2 transistors with scandium contacts. Nano Lett 13:100–105. https://doi.org/10.1021/nl303583v10.1021/nl303583v ↗
24. Shao G, Xu Y, Liu S (2019) Controllable preparation of 2D metal-semiconductor layered metal dichalcogenides heterostructures. Sci China Chem 62:295–298. https://doi.org/10.1007/s11426-018-9407-910.1007/s11426-018-9407-9 ↗
25. Andrews K, Bowman A, Rijal U, Chen PY, Zhou ZX (2020) Improved contacts and device performance in MoS2 transistors using a 2D semiconductor interlayer. ACS Nano 14:6232–6241. https://doi.org/10.1021/acsnano.0c0230310.1021/acsnano.0c02303 ↗
26. Cho H, Kang D, Lee Y, Bae H, Hong S, Cho Y, Kim K, Yi Y, Park JH, Im S (2021) Dramatic reduction of contact resistance via ultrathin LiF in two-dimensional MoS2 field effect transistors. Nano Lett 21:3503–3510. https://doi.org/10.1021/acs.nanolett.1c0018010.1021/acs.nanolett.1c00180 ↗
27. Kim GS, Kim SH, Park J, Han KH, Kim J, Yu HY (2018) Schottky barrier height engineering for electrical contacts of multilayered MoS2 transistors with reduction of metal-induced gap states. ACS Nano 12:6292–6300. https://doi.org/10.1021/acsnano.8b0333110.1021/acsnano.8b03331 ↗
28. Holler BA, Crowley K, Berger MH, Gao XPA (2020) 2D semiconductor transistors with Van der Waals oxide MoO3 as integrated high-κ gate dielectric. Adv Electron Mater 6:2000635. https://doi.org/10.1002/aelm.20200063510.1002/aelm.202000635 ↗
29. Li N, Wang Q, Shen C, Wei Z, Yu H, Zhao J, Lu X, Wang G, He C, Xie L, Zhu J, Du L, Yang R, Shi D, Zhang G (2020) Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors. Nat Electron 3:711–717. https://doi.org/10.1038/s41928-020-00475-810.1038/s41928-020-00475-8 ↗
30. Nketia Yawson B, Noh YY (2018) Recent progress on high-capacitance polymer gate dielectrics for flexible low-voltage transistors. Adv Funct Mater 28:1802201. https://doi.org/10.1002/adfm.20180220110.1002/adfm.201802201 ↗
31. Li S, Lin Y, Wu Y, Guo Y, Yu H, Miao R, Wang Z, Tian W, Li X (2019) Effect of Fe impurity on performance of La2O3 as a high κ gate dielectric. Ceram Int 45:21015–21022. https://doi.org/10.1016/j.ceramint.2019.06.29410.1016/j.ceramint.2019.06.294 ↗
32. Li S, Lin Y, Wu Y, Li X, Tian W (2020) Ni doping significantly improves dielectric properties of La2O3 films. J Alloys Compd 822:153469. https://doi.org/10.1016/j.jallcom.2019.15346910.1016/j.jallcom.2019.153469 ↗
33. Wang F, Hu E, Wang J, Yu L, Hong S, Kim JS, Zhu B (2022) Tuning La2O3 to high ionic conductivity by Ni-doping. Chem Commun 58:4360–4363. https://doi.org/10.1039/d1cc07183a10.1039/d1cc07183a ↗
34. Li S, Lin Y, Li G, Yu H, Tang S, Wu Y, Li X, Tian W (2020) Improved dielectric properties of La2O3–ZrO2 bilayer films for novel gate dielectrics. Vacuum 178:109448. https://doi.org/10.1016/j.vacuum.2020.10944810.1016/j.vacuum.2020.109448 ↗
35. Shao G, Lu Y, Hong J, Xue XX, Huang J, Xu Z, Lu X, Jin Y, Liu X, Li H, Hu S, Suenaga K, Han Z, Jiang Y, Li S, Feng Y, Pan A, Lin YC, Cao Y, Liu S (2020) Seamlessly splicing metallic SnxMo1−xS2 at MoS2 edge for enhanced photoelectrocatalytic performance in microreactor. Adv Sci 7:2002172. https://doi.org/10.1002/advs.20200217210.1002/advs.202002172 ↗
36. Shao G, Xue XX, Liu X, Zhang D, Jin Y, Wu Y, You B, Lin YC, Li S, Suenaga K, Wang X, Pan A, Li H, Hong J, Feng Y, Liu S (2020) Twist angle-dependent optical responses in controllably grown WS2 vertical homojunctions. Chem Mater 32:9721–9729. https://doi.org/10.1021/acs.chemmater.0c0341310.1021/acs.chemmater.0c03413 ↗
37. Shao G, Xue XX, Zhou X, Xu J, Jin Y, Qi S, Liu N, Duan H, Wang S, Li S, Ouzounian M, Hu TS, Luo J, Liu S, Feng Y (2019) Shape-engineered synthesis of atomically thin 1T-SnS2 catalyzed by potassium halides. ACS Nano 13:8265–8274. https://doi.org/10.1021/acsnano.9b0364810.1021/acsnano.9b03648 ↗
38. Wei Z, Tang J, Li X, Chi Z, Wang Y, Wang Q, Han B, Li N, Huang B, Li J, Yu H, Yuan J, Chen H, Sun J, Chen L, Wu K, Gao P, He C, Yang W, Shi D, Yang R, Zhang G (2021) Wafer-scale oxygen-doped MoS2 monolayer. Small Methods 5:e2100091. https://doi.org/10.1002/smtd.20210009110.1002/smtd.202100091 ↗
39. Daus A, Vaziri S, Chen V, Köroğlu Ç, Grady RW, Bailey CS, Lee HR, Schauble K, Brenner K, Pop E (2021) High-performance flexible nanoscale transistors based on transition metal dichalcogenides. Nat Electron 4:495–501. https://doi.org/10.1038/s41928-021-00598-610.1038/s41928-021-00598-6 ↗
40. Buchanan DA (1999) Scaling the gate dielectric: materials, integration, and reliability. IBM J Res Dev 43:245–264. https://doi.org/10.1147/rd.433.024510.1147/rd.433.0245 ↗
41. de Almeida RMC, Baumvol IJR (2003) Reaction–diffusion in high-κ dielectrics on Si. Surf Sci Rep 49:1–114. https://doi.org/10.1016/S0167-5729(02)00113-910.1016/S0167-5729(02)00113-9 ↗
42. Krisch KS, Sodini CG (1994) Suppression of interface-state generation in reoxidized nitrided oxide gate dielectrics. J Appl Phys 76:2284–2292. https://doi.org/10.1063/1.35764810.1063/1.357648 ↗
43. Green ML, Gusev EP, Degraeve R, Garfunkel EL (2001) Ultrathin (< 4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: understanding the processing, structure, and physical and electrical limits. J Appl Phys 90:2057–2121. https://doi.org/10.1063/1.138580310.1063/1.1385803 ↗
44. Wallace RM (2004) Challenges for the character-ization and integration of high-κ dielectrics. Appl Surf Sci 231–232:543–551. https://doi.org/10.1016/j.apsusc.2004.03.05610.1016/j.apsusc.2004.03.056 ↗
45. Zeitzoff PM, Hutchby JA, Huff HR (2002) Mosfet and front-end process integration: scaling trends, challenges, and potential solutions through the end of the roadmap. Int J High Speed Electron Syst 12:267–293. https://doi.org/10.1142/S012915640200124110.1142/S0129156402001241 ↗
46. Kaczer B, Degraeve R, Pangon N, Nigam T, Groeseneken G (1999) Investigation of temperature acceleration of thin oxide time-to-breakdown. Microelectron Eng 48:47–50. https://doi.org/10.1016/S0167-9317(99)00335-410.1016/S0167-9317(99)00335-4 ↗
47. Schroder DK, Babcock JA (2003) Negative bias temperature instability: road to cross in deep submicron silicon semiconductor manufacturing. J Appl Phys 94:1–18. https://doi.org/10.1063/1.156746110.1063/1.1567461 ↗
48. He G, Zhu L, Sun Z, Wan Q, Zhang L (2011) Integrations and challenges of novel high-κ gate stacks in advanced CMOS technology. Prog Mater Sci 56:475–572. https://doi.org/10.1016/j.pmatsci.2011.01.01210.1016/j.pmatsci.2011.01.012 ↗
49. Robertson J (2002) Band structures and band offsets of high κ dielectrics on Si. Appl Surf Sci 190:2–10. https://doi.org/10.1016/S0169-4332(01)00832-710.1016/S0169-4332(01)00832-7 ↗
50. Wilk GD, Wallace RM, Anthony JM (2001) High-κ gate dielectrics: current status and materials properties considerations. J Appl Phys 89:5243–5275. https://doi.org/10.1063/1.136106510.1063/1.1361065 ↗
51. Kingon AI, Maria JP, Streiffer SK (2000) Alternative dielectrics to silicon dioxide for memory and logic devices. Nature 406:1032–1038. https://doi.org/10.1038/3502324310.1038/35023243 ↗
52. Shim JH, Choi HJ, Kim Y, Torgersen J, An J, Lee MH, Prinz FB (2017) Process–property relationship in high-κ ALD SrTiO3 and BaTiO3: a review. J Mater Chem C 5:8000–8013. https://doi.org/10.1039/C6TC05158H10.1039/C6TC05158H ↗
53. Liu K, Jin B, Han W, Chen X, Gong P, Huang L, Zhao Y, Li L, Yang S, Hu X, Duan J, Liu L, Wang F, Zhuge F, Zhai T (2021) A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film. Nat Electron 4:906–913. https://doi.org/10.1038/s41928-021-00683-w10.1038/s41928-021-00683-w ↗
54. Wang B, Huang W, Chi L, Al-Hashimi M, Marks TJ, Facchetti A (2018) High-κ gate dielectrics for emerging flexible and stretchable electronics. Chem Rev 118:5690–5754. https://doi.org/10.1021/acs.chemrev.8b0004510.1021/acs.chemrev.8b00045 ↗
55. Weng J, Gao SP (2019) Structures and characteristics of atomically thin ZrO2 from monolayer to bilayer and two-dimensional ZrO2–MoS2 heterojunction. RSC Adv 9:32984–32994. https://doi.org/10.1039/C9RA06074J10.1039/C9RA06074J ↗
56. Paskaleva A, Rommel M, Hutzler A, Spassov D, Bauer AJ (2015) Tailoring the electrical properties of HfO2 MOS-devices by aluminum doping. ACS Appl Mater Interfaces 7:17032–17043. https://doi.org/10.1021/acsami.5b0307110.1021/acsami.5b03071 ↗
57. Zhao C, Richard O, Young E, Bender H, Roebben G, Haukka S, De Gendt S, Houssa M, Carter R, Tsai W, Van Der Biest O, Heyns M (2002) Thermostability of amorphous zirconium aluminate high-κ layers. J Non-Cryst Solids 303:144–149. https://doi.org/10.1016/S0022-3093(02)00977-810.1016/S0022-3093(02)00977-8 ↗
58. Zhu WJ, Tamagawa T, Gibson M, Furukawa T, Ma TP (2002) Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics. IEEE Electron Device Lett 23:649–651. https://doi.org/10.1109/LED.2002.80500010.1109/LED.2002.805000 ↗
59. Quan YC, Lee JE, Kang H, Roh Y, Jung D, Yang CW (2002) Formation of reliable HfO2/HfSixOy-gate-dielectric for metal-oxide-semiconductor devices. Jpn J Appl Phys 41:6904–6907. https://doi.org/10.1143/jjap.41.690410.1143/jjap.41.6904 ↗
60. Lee JS, Kim WH, Oh IK, Kim MK, Lee G, Lee CW, Park J, Lansalot Matras C, Noh W, Kim H (2014) Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)2(N-iPr-amd) precursor for a high permittivity gate dielectric. Appl Surf Sci 297:16–21. https://doi.org/10.1016/j.apsusc.2014.01.03210.1016/j.apsusc.2014.01.032 ↗
61. Yoo YW, Jeon W, Lee W, An CH, Kim SK, Hwang CS (2014) Structure and electrical properties of Al-doped HfO2 and ZrO2 films grown via atomic layer deposition on Mo electrodes. ACS Appl Mater Interfaces 6:22474–22482. https://doi.org/10.1021/am506525s10.1021/am506525s ↗
62. Hubbard KJ, Schlom DG (1996) Thermodynamic stability of binary oxides in contact with silicon. J Mater Res 11:2757–2776. https://doi.org/10.1557/JMR.1996.035010.1557/JMR.1996.0350 ↗
63. Rudakova AV, Emeline AV, Romanychev AI, Bahnemann DW (2021) Photoinduced hydrophilic behavior of TiO2 thin film on Si substrate. J Alloys Compd 872:159746. https://doi.org/10.1016/j.jallcom.2021.15974610.1016/j.jallcom.2021.159746 ↗
64. Thomson AF, McIntosh KR (2012) Light-enhanced surface passivation of TiO2-coated silicon. Prog Photovolt 20:343–349. https://doi.org/10.1002/pip.113210.1002/pip.1132 ↗
65. Kwon HJ, Jang J, Grigoropoulos CP (2016) Laser direct writing process for making electrodes and high-κ Sol-Gel ZrO2 for boosting performances of MoS2 transistors. ACS Appl Mater Interfaces 8:9314–9318. https://doi.org/10.1021/acsami.5b1135710.1021/acsami.5b11357 ↗
66. Kim HG, Lee HBR (2017) Atomic layer deposition on 2D materials. Chem Mater 29:3809–3826. https://doi.org/10.1021/acs.chemmater.6b0510310.1021/acs.chemmater.6b05103 ↗
67. Wang H, Wang Y, Feng J, Ye C, Wang B, Wang H, Li Q, Jiang Y, Huang A, Xiao ZS (2008) Structure and electrical properties of HfO2 high-κ films prepared by pulsed laser deposition on Si (100). Appl Phys A 93:681–68410.1007/s00339-008-4695-8 ↗
68. Sahiner MA, Woicik JC, Gao P, McKeown P, Croft MC, Gartman M, Benapfla B (2007) Pulsed laser deposition and characterization of Hf-based high-κ dielectric thin films. Thin Solid Films 515:6548–6551. https://doi.org/10.1016/j.tsf.2006.11.17110.1016/j.tsf.2006.11.171 ↗
69. Ganapathi KL, Bhat N, Mohan S (2021) Optimization and integration of ultrathin e-beam grown HfO2 gate dielectrics in MoS2 transistors. J Phys D: Appl Phys 54:445302. https://doi.org/10.1088/1361-6463/ac19e010.1088/1361-6463/ac19e0 ↗
70. He G, Deng B, Sun Z, Chen X, Liu Y, Zhang L (2013) CVD-derived Hf-based high-κ gate dielectrics. Crit Rev Solid State Mater Sci 38:235–261. https://doi.org/10.1080/10408436.2012.72976610.1080/10408436.2012.729766 ↗
71. Qian Q, Li B, Hua M, Zhang Z, Lan F, Xu Y, Yan R, Chen KJ (2016) Improved gate dielectric deposition and enhanced electrical stability for single-layer MoS2 MOSFET with an AlN interfacial layer. Sci Rep 6:27676. https://doi.org/10.1038/srep2767610.1038/srep27676 ↗
72. Suntola T (1989) Atomic layer epitaxy. Mater Sci Rep 4:261–312. https://doi.org/10.1016/S0920-2307(89)80006-410.1016/S0920-2307(89)80006-4 ↗
73. Kim H, Lee HBR, Maeng WJ (2009) Applications of atomic layer deposition to nanofabrication and emerging nanodevices. Thin Solid Films 517:2563–2580. https://doi.org/10.1016/j.tsf.2008.09.00710.1016/j.tsf.2008.09.007 ↗
74. Chang HY, Yang S, Lee J, Tao L, Hwang WS, Jena D, Lu N, Akinwande D (2013) High-performance, highly bendable MoS2 transistors with high-κ dielectrics for flexible low-power systems. ACS Nano 7:5446–5452. https://doi.org/10.1021/nn401429w10.1021/nn401429w ↗
75. Bolshakov P, Zhao P, Azcatl A, Hurley PK, Wallace RM, Young CD (2017) Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-κ dielectrics. Microelectron Eng 178:190–193. https://doi.org/10.1016/j.mee.2017.04.04510.1016/j.mee.2017.04.045 ↗
76. Liu X, Chai Y, Liu Z (2017) Investigation of chemical vapour deposition MoS2 field effect transistors on SiO2 and ZrO2 substrates. Nanotechnology 28:164004. https://doi.org/10.1088/1361-6528/aa610a10.1088/1361-6528/aa610a ↗
77. Liu H, Ye PD (2012) MoS2 dual-gate MOSFET with atomic-layer-deposited Al2O3 as top-gate dielectric. IEEE Electron Device Lett 33:546–548. https://doi.org/10.1109/LED.2012.218452010.1109/LED.2012.2184520 ↗
78. Sanne A, Ghosh R, Rai A, Movva HCP, Sharma A, Rao R, Mathew L, Banerjee SK (2015) Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates. Appl Phys Lett 106:062101. https://doi.org/10.1063/1.490788510.1063/1.4907885 ↗
79. Illarionov YY, Smithe KKH, Waltl M, Knobloch T, Pop E, Grasser T (2017) Improved Hysteresis and reliability of MoS2 transistors with high-quality CVD growth and Al2O3 encapsulation. IEEE Electron Dev Lett 38:1763–1766. https://doi.org/10.1109/LED.2017.276860210.1109/LED.2017.2768602 ↗
80. Liu H, Xu K, Zhang X, Ye PD (2012) The integration of high-κ dielectric on two-dimensional crystals by atomic layer deposition. Appl Phys Lett 100:152115. https://doi.org/10.1063/1.370359510.1063/1.3703595 ↗
81. Ma N, Jena D (2014) Charge scattering and mobility in atomically thin semiconductors. Phys Rev X 4:011043. https://doi.org/10.1103/PhysRevX.4.01104310.1103/PhysRevX.4.011043 ↗
82. Zou X, Wang J, Chiu CH, Wu Y, Xiao X, Jiang C, Wu WW, Mai L, Chen T, Li J, Ho JC, Liao L (2014) Interface engineering for high-performance top-gated MoS2 field-effect transistors. Adv Mater 26:6255–6261. https://doi.org/10.1002/adma.20140200810.1002/adma.201402008 ↗
83. Xu JP, Xie WX, Liu L, Zhao X, Song X, Lai PT, Tang WM (2019) Effects of trapped charges in gate dielectric and high-κ encapsulation on performance of MoS2 transistor. IEEE Trans Electron Dev 66:1107–1112. https://doi.org/10.1109/TED.2018.288859810.1109/TED.2018.2888598 ↗
84. Wang X, Zhang TB, Yang W, Zhu H, Chen L, Sun QQ, Zhang DW (2017) Improved integration of ultra-thin high-κ dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment. Appl Phys Lett 110:053110. https://doi.org/10.1063/1.497562710.1063/1.4975627 ↗
85. Pezeshki A, Hosseini Shokouh SH, Raza SRA, Kim JS, Min SW, Shackery I, Jun SC, Im S (2014) Top and back gate molybdenum disulfide transistors coupled for logic and photo-inverter operation. J Mater Chem C 2:8023–8028. https://doi.org/10.1039/C4TC01673D10.1039/C4TC01673D ↗
86. Krasnozhon D, Lembke D, Nyffeler C, Leblebici Y, Kis A (2014) MoS2 transistors operating at gigahertz frequencies. Nano Lett 14:5905–5911. https://doi.org/10.1021/nl502863810.1021/nl5028638 ↗
87. Azcatl A, McDonnell S, Santosh KC, Peng X, Dong H, Qin XY, Addou R, Mordi GI, Lu N, Kim JY, Kim MJ, Cho KJ, Wallace RM (2014) MoS2 functionalization for ultra-thin atomic layer deposited dielectrics. Appl Phys Lett 104: https://doi.org/10.1063/1.486914910.1063/1.4869149 ↗
88. Azcatl A, Kc S, Peng X, Lu N, McDonnell S, Qin XY, de Dios F, Addou R, Kim JY, Kim MJ, Cho K, Wallace RM (2015) HfO2 on UV–O3 exposed transition metal dichalcogenides: interfacial reactions study. 2D Mater 2:014004. https://doi.org/10.1088/2053-1583/2/1/01400410.1088/2053-1583/2/1/014004 ↗
89. Wang J, Li S, Zou X, Ho J, Liao L, Xiao X, Jiang C, Hu W, Wang J, Li J (2015) Integration of high-oxide on MoS2 by using ozone pretreatment for high-performance MoS2 top-gated transistor with thickness-dependent carrier scattering investigation. Small 11:5932–5938. https://doi.org/10.1002/smll.20150126010.1002/smll.201501260 ↗
90. Park S, Kim SY, Choi Y, Kim M, Shin H, Kim J, Choi W (2016) Interface properties of atomic-layer-deposited Al2O3 thin films on ultraviolet/ozone-treated multilayer MoS2 crystals. ACS Appl Mater Interfaces 8:11189–11193. https://doi.org/10.1021/acsami.6b0156810.1021/acsami.6b01568 ↗
91. Zhao P, Azcatl A, Gomeniuk YY, Bolshakov P, Schmidt M, McDonnell SJ, Hinkle CL, Hurley PK, Wallace RM, Young CD (2017) Probing Interface defects in top-gated MoS2 transistors with impedance spectroscopy. ACS Appl Mater Interfaces 9:24348–24356. https://doi.org/10.1021/acsami.7b0620410.1021/acsami.7b06204 ↗
92. Zhao P, Khosravi A, Azcatl A, Bolshakov P, Mirabelli G, Caruso E, Hinkle CL, Hurley PK, Wallace RM, Young CD (2018) Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysis. 2D Mater 5:031002. https://doi.org/10.1088/2053-1583/aab72810.1088/2053-1583/aab728 ↗
93. Price KM, Schauble KE, McGuire FA, Farmer DB, Franklin AD (2017) Uniform growth of sub-5-nanometer high-κ dielectrics on MoS2 using plasma-enhanced atomic layer deposition. ACS Appl Mater Interfaces 9:23072–23080. https://doi.org/10.1021/acsami.7b0053810.1021/acsami.7b00538 ↗
94. Price KM, Najmaei S, Ekuma CE, Burke RA, Dubey M, Franklin AD (2019) Plasma-enhanced atomic layer deposition of HfO2 on monolayer, bilayer, and trilayer MoS2 for the integration of high-κ dielectrics in two-dimensional devices. ACS Appl Nano Mater 2:4085–4094. https://doi.org/10.1021/acsanm.9b0050510.1021/acsanm.9b00505 ↗
95. Xu J, Wen M, Zhao X, Liu L, Song X, Lai PT, Tang WM (2018) Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as backgate dielectric. Nanotechnology 29:345201. https://doi.org/10.1088/1361-6528/aac85310.1088/1361-6528/aac853 ↗
96. Zhao P, Azcatl A, Bolshakov P, Moon J, Hinkle CL, Hurley PK, Wallace RM, Young CD (2017) Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric. J Vac Sci Technol B 35:01A118. https://doi.org/10.1116/1.497422010.1116/1.4974220 ↗
97. Pan Y, Jia K, Huang K, Wu Z, Bai G, Yu J, Zhang Z, Zhang Q, Yin H (2019) Near-ideal subthreshold swing MoS2 back-gate transistors with an optimized ultrathin HfO2 dielectric layer. Nanotechnology 30:095202. https://doi.org/10.1088/1361-6528/aaf95610.1088/1361-6528/aaf956 ↗
98. Nourbakhsh A, Zubair A, Huang S, Ling X, Dresselhaus MS, Kong J, Gendt SD, Palacios T (2015) 15-nm channel length MoS2 FETs with single- and double-gate structures. In: 2015 Symposium on VLSI technology (VLSI Technology): T28–T29. https://doi.org/10.1109/VLSIT.2015.722369010.1109/VLSIT.2015.7223690 ↗
99. Chang WH, Okada N, Horikawa M, Endo T, Miyata Y, Irisawa T (2021) ALD-ZrO2 gate dielectric with suppressed interfacial oxidation for high performance MoS2 top gate MOSFETs. Jpn J Appl Phys 60:SBBH03. https://doi.org/10.35848/1347-4065/abd6d910.35848/1347-4065/abd6d9 ↗
100. Liu S, Yang S, Tang Z, Jiang Q, Liu C, Wang M, Shen B, Chen KJ (2015) Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer. Appl Phys Lett 106:051605. https://doi.org/10.1063/1.490786110.1063/1.4907861 ↗