journal article·2022-10-28

Gate-Tunable Junctions within Monolayer MoS2–WS2 Lateral Heterostructures

Xi Wan, Shijia Xu, Mingliang Gao, Tianhao Huang, Yaoyu Duan, Runze Zhan, Kun Chen, Xiaofeng Gu, Weiguang Xie, Jianbin Xu

ACS Applied Nano Materials· Volume 5· Issue 10
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Abstract

Two-dimensional (2D) lateral heterostructures have shown promising device applications. Although the diodelike responses across the 2D lateral heterostructure have been widely reported, the essential electrical properties, such as the Fermi levels and the lateral built-in potential, have been barely studied, especially with the applied gate voltage. In this work, we report the highly gate-tunable junction within monolayer MoS2–WS2 lateral heterostructures synthesized by our developed shortcut growth strategy. The quantitative determination between the gate voltage and the built-in potential has been revealed by the combined use of Kelvin probe force microscopy and I–V characteristics, in good agreement with the theoretical calculation results. A built-in potential up to 262 meV is observed at Vg = 40 V, which is three times larger than that at Vg = 0 V. A trap density mediated mechanism is proposed to explain the highly gate-tunable built-in potential. Based on the band-discontinuity mode, the energy-band diagram of the monolayer MoS2–WS2 lateral heterostructures is presented, which belongs to the 2D type II n–n heterojunction. Our findings demonstrate the strongly gate voltage-dependent and highly tunable built-in potential within the 2D type II heterojunction, which will become the novel building blocks for 2D optoelectronic, photodetection, and photovoltaic devices.
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Research context

OpenAlex topics: 2D Materials and Applications · Graphene research and applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Institute of Advanced Technology, Jiangnan University, Wuxi 214122, China

State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology and Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou 510275, China

Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, and Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, China

Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR 999077, P. R. China

Funding

Sun Yat-sen University · Research Grants Council, University Grants Committee · Natural Science Foundation of Jiangsu Province · Innovation and Technology Fund · Central University Basic Research Fund of China · Guangzhou Science and Technology Program key projects · Six Talent Peaks Project in Jiangsu Province · National Natural Science Foundation of China · Natural Science Foundation of Guangdong Province · Higher Education Discipline Innovation Project · Jiangsu Province · Wuxi City

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