Gate-Induced Trans-Dimensionality of Carrier Distribution in Bilayer Lateral Heterosheet of MoS₂ and WS₂ for Semiconductor Devices with Tunable Functionality

Using the metal–organic chemical vapor deposition technique, we synthesized a bilayer lateral heterostucture of MoS 2 and WS 2, each of which layers consist of alternately arranged nanostrips of MoS 2 and WS 2 . Transmission electron microscope images exhibit a checked pattern contrast, reflecting the three distinct interlayer metal arrangements of Mo/Mo, W/Mo (Mo/W), and W/W stacking. Theoretical calculations based on the density functional theory elucidated that the bilayer lateral heterostructure of MoS 2 and WS 2 exhibits complexed type-II band edge alignments depending on the interlayer metal arrangement: The conduction band edge is located at the Mo atom in a Mo/Mo sector, while the valence band edge is located at the W atom in a W/W sector. According to the complexed band edge alignment, the field-induced carrier injection behavior in the bilayer heterosheet composed of MoS 2 and WS 2 strips shows gate-induced trans-dimensionality, where the accumulated carrier distributions continuously vary from zero- to two-dimensional based on the applied gate voltage. Tunable carrier dimensionality can be applicable for wide areas of electronics, such as quantum dot arrays with tunable dot–dot interaction.