Growth of Transition Metal Dichalcogenide Heterojunctions with Metal Oxides for Metal–Insulator–Semiconductor Capacitors

The coupling of transition metal dichalcogenides (TMDs) and other materials offers significant synergistic effects; however, the fabrication of artificial multiheterojunction (MHJ) TMDs is a significant challenge owing to complex processes, including layer-by-layer stacking and transfer of free-standing oxide layers. Herein, we developed a straightforward method using sequential pulsed laser deposition (PLD) to fabricate MHJ-TMD thin films. The artificially designed TMD-based (WSe2/MoS2) superlattice and TMD/oxide-based MHJ thin films were successfully synthesized on the centimeter-scale silicon-based substrate via an in situ PLD process. The PLD-grown MHJ-TMD films exhibited good uniformity, layer-by-layer stacking, and interlayer coupling between each TMD layer. Also, we fabricated MHJ-TMD films as a metal–semiconductor/insulator–metal device to confirm their potential as an electronic device. We believe that our technique will widen the scope of TMD applications in different fields.