journal article·2018-06-22

Hierarchically Structured Thermoelectric Materials in Quaternary System Cu–Zn–Sn–S Featuring a Mosaic-type Nanostructure

Chao Li, Yawei Shen, Rong Huang, Akihito Kumamoto, Shiyou Chen, Chenmin Dai, Masato Yoshiya, Susumu Fujii, Kohei Funai, Craig A. J. Fisher, Yifeng Wang, Ruijuan Qi, Chun-Gang Duan, Lin Pan, Junhao Chu, Tsukasa Hirayama, Yuichi Ikuhara

ACS Applied Nano Materials· Volume 1· Issue 6
Publisher page

Abstract

Multinary chalcogenide semiconductors in the Cu–Zn–Sn–S system have numerous potential applications in the fields of energy production, photocatalysis and nonlinear optics, but characterization and control of their microstructures remains a challenge because of the complexity resulting from the many mutually soluble metallic elements. Here, using state-of-the-art scanning transmission electron microscopy, energy dispersive spectroscopy, first-principles calculations and classical molecular dynamics simulations, we characterize the structures of promising thermoelectric materials Cu2(Zn,Sn)S3 at different length scales to gain a better understanding of how the various components influence the thermoelectric behavior. We report the discovery of a mosaic-type domain nanostructure in the matrix grains comprising well-defined cation-disordered domains (the “tesserae”) coherently bonded to a surrounding network phase with semiordered cations. The network phase is found to have composition Cu4+xZnxSn2S7, a previously unknown phase in the Cu–Zn–Sn–S system, while the tesserae have compositions closer to that of the nominal composition. This nanostructure represents a new kind of phonon-glass electron-crystal, the cation-disordered tesserae and the abrupt domain walls damping the thermal conductivity while the cation-(semi)ordered network phase supports a high electronic conductivity. Optimization of the hierarchical architecture of these materials represents a new strategy for designing environmentally benign, low-cost thermoelectrics with high figures of merit.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200062, China

College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, China

Nanostructures Research Laboratory, Japan Fine Ceramics Center, Nagoya 456-8587, Japan

Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China

Institute of Engineering Innovation, The University of Tokyo, Tokyo 113-8656, Japan

Department of Adaptive Machine Systems, Osaka University, Osaka 565-0871, Japan

Funding

Natural Science Foundation of Shanghai · East China Normal University · Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Public Foundation, Chubu Science and Technology Center

References (48)

Show source-provided references
1. 10.1021/acs.chemrev.6b0037610.1021/acs.chemrev.6b00376 ↗
2. 10.1002/adma.20120286010.1002/adma.201202860 ↗
3. 10.1039/C3EE41437J10.1039/C3EE41437J ↗
4. 10.1039/C4EE02428A10.1039/C4EE02428A ↗
5. 10.1021/ja410753k10.1021/ja410753k ↗
6. 10.1016/j.solmat.2008.12.00910.1016/j.solmat.2008.12.009 ↗
7. 10.1021/ja108427b10.1021/ja108427b ↗
8. 10.1021/cm902202410.1021/cm9022024 ↗
9. 10.1021/acs.accounts.5b0053510.1021/acs.accounts.5b00535 ↗
10. 10.1002/pssa.221041014110.1002/pssa.2210410141 ↗
11. 10.1103/PhysRevB.83.24520210.1103/PhysRevB.83.245202 ↗
12. 10.1103/PhysRevB.56.542410.1103/PhysRevB.56.5424 ↗
13. 10.1088/0953-8984/21/17/17600210.1088/0953-8984/21/17/176002 ↗
14. 10.1038/188136a010.1038/188136a0 ↗
15. 10.1038/ncomms643110.1038/ncomms6431 ↗
16. 10.1002/adma.20120314610.1002/adma.201203146 ↗
17. 10.1002/aenm.20130146510.1002/aenm.201301465 ↗
18. 10.1039/C6TA10543B10.1039/C6TA10543B ↗
19. 10.1016/S0022-3697(03)00172-010.1016/S0022-3697(03)00172-0 ↗
20. 10.1103/PhysRevB.84.07521310.1103/PhysRevB.84.075213 ↗
21. 10.1021/cm101589c10.1021/cm101589c ↗
22. 10.1103/PhysRevB.86.15520110.1103/PhysRevB.86.155201 ↗
23. 10.1016/j.jallcom.2016.02.18510.1016/j.jallcom.2016.02.185 ↗
24. 10.1063/1.307449910.1063/1.3074499 ↗
25. 10.1016/j.actamat.2015.06.04610.1016/j.actamat.2015.06.046 ↗
26. 10.1039/C7TC00420F10.1039/C7TC00420F ↗
27. 10.1063/1.494847510.1063/1.4948475 ↗
28. 10.1002/adfm.20150076610.1002/adfm.201500766 ↗
29. 10.1103/PhysRevLett.107.23590110.1103/PhysRevLett.107.235901 ↗
30. 10.1021/acsami.5b0801110.1021/acsami.5b08011 ↗
31. 10.1126/science.109296310.1126/science.1092963 ↗
32. 10.1021/ja071875h10.1021/ja071875h ↗
33. 10.1002/adma.20150103010.1002/adma.201501030 ↗
34. 10.1038/nature1143910.1038/nature11439 ↗
35. 10.1038/srep3250110.1038/srep32501 ↗
36. 10.1103/PhysRevB.59.175810.1103/PhysRevB.59.1758 ↗
37. 10.1063/1.327579610.1063/1.3275796 ↗
38. 10.1103/PhysRevB.31.526210.1103/PhysRevB.31.5262 ↗
39. Guan H. · J. Mater. Sci.: Mater. Electron. · 2012 · 24 · 1490
40. 10.1016/0304-3991(91)90004-P10.1016/0304-3991(91)90004-P ↗
41. 10.1126/science.111983910.1126/science.1119839 ↗
42. 10.1038/ncomms1107910.1038/ncomms11079 ↗
43. 10.1016/j.ultramic.2014.11.02910.1016/j.ultramic.2014.11.029 ↗
44. 10.1016/j.optmat.2012.09.03110.1016/j.optmat.2012.09.031 ↗
45. 10.1021/cm501899q10.1021/cm501899q ↗
46. 10.1038/nmat209010.1038/nmat2090 ↗
47. 10.1007/s11664-015-3938-710.1007/s11664-015-3938-7 ↗
48. 10.1080/0892702041000170938910.1080/08927020410001709389 ↗