journal article·2018-04-27

Localized-State-Dependent Electroluminescence from ZnO/ZnS Core–Shell Nanowires–GaN Heterojunction

Ruxue Li, Zhipeng Wei, Xuan Fang, Yanbin Wang, Yongfeng Li, Dengkui Wang, Jilong Tang, Dan Fang, Xueying Chu, Bin Yao, Rui Chen, Xiaohua Wang

ACS Applied Nano Materials· Volume 1· Issue 4
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Abstract

ZnO is a very important material for excitonic ultraviolet optoelectronic devices operating above room temperature due to its wide band gap and high exciton binding energy. In this paper, the influences of different degrees of the localized state on the photoluminescence and electroluminescence properties of the ZnO/ZnS core–shell nanowires–GaN heterojunction are systematically discussed. The physical model for radiative recombination of localized carriers was proposed to explain these phenomena. Our results indicate that surface-coating of ZnS nanoparticles on ZnO nanowires (NWs) is one of the effective ways to manipulate the localized states, and only the appropriate localized state will result in the optimal optoelectronic properties.
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Research context

OpenAlex topics: ZnO doping and properties · GaN-based semiconductor devices and materials · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China

Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, P. R. China

Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, P. R. China

Funding

People's Government of Jilin Province · National Natural Science Foundation of China · Shenzhen Science and Technology Innovation Committee

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