journal article·2021-02

Corrigendum to “Write once read many times resistance switching memory based on allinorganic perovskite CsPbBr3 quantum dot”

Zhiliang Chen, Yating Zhang, Yu Yu, Yongli Che, Lufan Jin, Yifan Li, Qingyan Li, Tengteng Li, Haitao Dai, Jianquan Yao

Optical Materials· Volume 112
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References

Reference metadata was not supplied for this record.