High performance of Schottky barriers for Cu contacted with InGaP/GaAs layers
Source abstract
Abstract
We present the characteristics of Cu Schottky contacts on wide band gap InGaP semiconductors with and without sulfur treatment before Schottky contact deposition, and investigate the influence of post-heat treatment on the Schottky diodes. With sulfur treatment, the performance of Schottky diodes compared with samples without sulfur treatment is improved. However, a drastic degradation of the performances was observed in samples annealed at 500°C.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and interfaces · Semiconductor Quantum Structures and Devices · Radio Frequency Integrated Circuit Design
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References (4)
Show source-provided references
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