Temperature and dopant dependence of hole transport in a green light emitting polyspirobifluorene polymer

Abstract In the present work, hole transport in a green light emitting polyspirobiflorene polymer has been studied. We have realized better hole injection by using tetra-fluoro-tetracyano-quinodimethane hole injection layer in the polymer. The temperature dependent current density–voltage characteristics of polyspirobifluorene thin films have been investigated. Hole mobility has been calculated by direct current space charge limited conduction method. Further, the charge transport of the interface modified polymer has been considered as a function of doping concentrations. The current density has been found to increase with the doping concentrations. The conductivity of the polyspirobifluorene has also been calculated at room temperature and found to be increased with the dopant concentrations. The present study opens a new way to improve the optoelectronic devices.