Investigating the effects of capping layer on optical gain of nitride based semiconductor nanostructure lasers
Source abstract
Abstract
Abstract In this study, the effects of GaN capping layer on the behaviour of AlGaN/GaN nanostructure based laser is considered. We have employed the self-consistent solution of Poisson and Schrodinger equations for calculation of the energy levels, wave functions and conduction and valance bands profile. The impact of different thicknesses of the capping layer has been studied for sheet carrier density, then on optical gain. The results indicate that, by increasing the thickness of the cap layer, the optical gain decreases.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Nanowire Synthesis and Applications
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