Laser-induced formation of periodical structures on the AIIBVI semiconductors surfaces

Abstract Periodical relief structures were formed on the surface of A II B VI semiconductor crystals after pulse irradiation using Nd:YAG laser with the pulse duration 30 ps working at 532 nm. This work was performed on monocrystals of CdZnTe, CdMnTe, HgCdTe, CdTe grown by means of Bridgman method. In order to determine the surface periodic structures (SPS), atomic force microscopy (AFM) has been used. Analyses of the profilograms obtained from these AFM images were performed by means of amplitudes of their discrete Fourier spectra, which allow determining periodicity of surface periodical structures (SPS) and their orientation. The theoretical model of laser-induced SPS correlates with experimental results.