Channel waveguides grown by selective area chemical beam epitaxy

Abstract We report here results on buried-channel optical waveguides on GaAsP/GaAs material. These semiconductor devices were fabricated using chemical beam epitaxy (CBE). We discuss a method using epitaxial growth by selective area chemical beam epitaxy (SA-CBE). In this case a SiO 2 -electron cyclotron resonance (ECR) film was deposited as a mask on the GaAs wafer. We analyze alternative methods where etching techniques were used to define channels on GaAsP/GaAs plane waveguides. Finally, a symmetric light confinement was obtained by a second regrowth step of GaAsP.