journal article·2020-08-28

Large-Scale Atomically Thin Monolayer 2H-MoS2 Field-Effect Transistors

Nitin Babu Shinde, Beo Deul Ryu, Kalaiarasan Meganathan, Bellarmine Francis, Chang-Hee Hong, S. Chandramohan, Senthil Kumar Eswaran

ACS Applied Nano Materials· Volume 3· Issue 8
Publisher page

Abstract

A viable solution for the large-scale production of MoS2 thin films directly on SiO2/Si with relatively larger growth rates is demonstrated via a gas-phase precursor-assisted chemical vapor deposition approach. Comprehensive Raman and photoluminescence measurements reveal the excellent spatial homogeneity and high optical quality of the MoS2 thin films. The electrical properties of the MoS2 layers were tested by fabricating arrays of back-gated monolayer MoS2 field-effect transistors. Our findings suggest that the electrical properties are influenced by the grain size of the MoS2 monolayers.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

2D Materials and Devices Laboratory (2DML), Sir C. V. Raman Research Park, Department of Physics and Nanotechnology, SRM Institute of Science and Technology (SRMIST), Kattankulathur 603203, Chennai, India

School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 54896, South Korea

Nano Functional Materials Technology Centre, Department of Physics, Indian Institute of Technology Madras, Madras 600036, Chennai, India

Nanotechnology Research Centre, SRM Institute of Science and Technology (SRMIST), Kattankulathur 603203, Chennai, India

Funding

Science and Engineering Research Board

References (30)

Show source-provided references
1. 10.1038/nphoton.2015.28210.1038/nphoton.2015.282 ↗
2. 10.1038/nature1238510.1038/nature12385 ↗
3. 10.1038/natrevmats.2017.3310.1038/natrevmats.2017.33 ↗
4. 10.1039/C8CS00314A10.1039/C8CS00314A ↗
5. 10.1021/acsami.8b1985910.1021/acsami.8b19859 ↗
6. 10.1002/adma.20180272210.1002/adma.201802722 ↗
7. 10.1103/PhysRevB.100.08541110.1103/PhysRevB.100.085411 ↗
8. 10.1088/2053-1583/aaf83610.1088/2053-1583/aaf836 ↗
9. 10.1021/acsnano.7b0381910.1021/acsnano.7b03819 ↗
10. 10.1039/c3nr05993f10.1039/c3nr05993f ↗
11. 10.1002/adfm.20190804010.1002/adfm.201908040 ↗
12. 10.1088/2053-1583/ab6d3310.1088/2053-1583/ab6d33 ↗
13. 10.1021/acsami.7b1067610.1021/acsami.7b10676 ↗
14. 10.1088/2053-1583/aaf3e910.1088/2053-1583/aaf3e9 ↗
15. 10.1002/adma.20180493910.1002/adma.201804939 ↗
16. 10.1038/nature1441710.1038/nature14417 ↗
17. 10.1021/acs.chemmater.7b0136710.1021/acs.chemmater.7b01367 ↗
18. 10.1063/1.509545110.1063/1.5095451 ↗
19. 10.1088/1361-6528/aa695810.1088/1361-6528/aa6958 ↗
20. 10.1039/C4NR07080A10.1039/C4NR07080A ↗
21. 10.1063/1.514260110.1063/1.5142601 ↗
22. 10.1021/nn100393710.1021/nn1003937 ↗
23. 10.1021/acs.nanolett.7b0318410.1021/acs.nanolett.7b03184 ↗
24. 10.1039/C9NR03203G10.1039/C9NR03203G ↗
25. 10.1126/sciadv.aaw318010.1126/sciadv.aaw3180 ↗
26. 10.1021/nl201874w10.1021/nl201874w ↗
27. 10.1002/smll.20200059610.1002/smll.202000596 ↗
28. 10.1063/1.496739810.1063/1.4967398 ↗
29. 10.1021/nn503988x10.1021/nn503988x ↗
30. 10.1002/adma.20110479810.1002/adma.201104798 ↗