Optimization of growth conditions for direct synthesis of SnSe2 thin films via improved atmospheric pressure chemical vapor deposition
Source abstract
Abstract
In this study, high-quality tin diselenide (SnSe 2 ) thin films were successfully synthesized using an optimized atmospheric pressure chemical vapor deposition (APCVD) technique. Precise control over key growth parameters, such as substrate temperature and deposition time , enabled the realization of films exhibiting exceptional crystallographic and optical properties . Notably, the growth temperature was found to significantly influence the SnSe 2 film morphology. Under the optimal conditions (250 °C growth temperature and 90 min of deposition), the films exhibited a strong (001) crystal orientation , 24.6 % transmittance , an optical bandgap of 1.55 eV, and an optical thickness of approximately 386.19 nm. Additionally, the films demonstrated N-type semiconductor behavior, making them highly suitable for use in electronic and optoelectronic applications . This study provides valuable insights for the large-scale production of high-performance SnSe 2 thin films suitable for electronic and optoelectronic applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Advanced Thermoelectric Materials and Devices · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (45)
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