Preparation and optical properties of hexa-tungsten bronze-type CsNbW 2 O 9 semiconductor

Abstract CsNbW2O9 semiconductor nanoparticles were synthesized by the facile sol-gel method. The morphological characteristics were tested by SEM, TEM, and EDS measurements. The samples crystalized in the uniform nanoparticle with a diameter of about 50 nm. The X-ray polycrystalline diffraction (XRD) measurements and the Rietveld refinements were completed to confirm the successful synthesis of CsNbW2O9 nanoparticles. CsNbW2O9 belongs to an interesting compound of AxWO3-type (A = Cs) hexagonal tungsten bronzes with the partial substitution of W6+ by Nb5+ ions. In contrast to AxWO3 (A = Cs) tungsten bronzes, which are nonstoichiometric compounds with metallic-type conductivity, CsNbW2O9 belongs to a typical semiconductor. The optical absorption, band gap energy and electronic structures were discussed. CsNbW2O9 semiconductor shows an indirect allowed transition with an energy gap of 2.38 eV. Meanwhile, CsNbW2O9 shows a self-activated emission due to d0 transitions in (Nb/W)O6. The luminescence properties of CsNbW2O9 semiconductor with a low quenching temperature were discussed based on the distorted structure.