Properties of semiconductor scintillators and combined detectors of ionizing radiation based on ZnSe(Te,O)/pZnTe–nCdSe structures

Methods for the practical utilization of the unique property combination found in crystals ZnSe(Te,O) as semiconductor materials and highly efficient scintillators have been studied. Scintillators based on isovalently doped ZnSe crystals have luminescence maximum λmax=600–640 nm, X-ray conversion efficiency 4–7% higher, and radiation stability – more than 103–104 times higher than CsI(Tl). It is shown that this combination allows the creation of AIIBVI heterostructures–photoreceivers of intrinsic luminescence of the scintillator directly on the ZnSe(Te,O) crystal surface. Methods are considered for the preparation of semiconductor scintillator and X-ray sensitive structure ZnSe(Te,O)/pZnTe–nCdSe. It has been shown that the maximum e.m.f. value for integrated detectors is 1.2–1.4 V, and their X-ray sensitivity reaches values up to 180–220 nAmin/Rcm2. The dynamic linearity range of the output characteristic of the detectors was not less than 105, the afterglow level after 20 ms – less than 0.05%, allowing them to be used in X-ray tomographs.