The investigation for various treatments of InAlGaP Schottky diodes

Abstract We present the Schottky performances of Ti/Pt/Au contacts to the wide band gap semiconductor In 0.5 (Al 0.66 Ga 0.34 ) 0.5 P with various surface treatment methods before Schottky metals deposition. To remove the native oxide layer, the In 0.5 (Al 0.66 Ga 0.34 ) 0.5 P surface was treated with the surface treatment using buffer oxide etchant (BOE), diluted HCl and diluted NH 4 OH, respectively. The performances of associated Schottky diodes compared with samples without surface treatment are improved significantly. Among the various surface treatments, the best Schottky performances with an ideality factor of 1.10, a Schottky barrier height of 1.08 V and a breakdown voltage of −58 V for the InAlGaP surface treated with diluted NH 4 OH for 30 s was obtained.