journal article·2000-08

Determination of optical parameters of GeTe semiconductor films after thermal treatment

Jing Li, Fuxi Gan, Zhengtian Gu, Quan Xie, Hao Ruan, Peihui Liang

Optical Materials· Volume 14· Issue 4
Publisher page

Abstract

The optical parameters of GeTe semiconductor films after various thermal treatments have been measured using a novel method. A comparative study using a spectrum ellipsometer is presented. The optical parameters of the films were extracted precisely by data analysis and corrections have been made to previous calculations. Calculations based on the spectral ellipsometry measurements are presented finally, and the complex refractive index curves of the samples in the spectral range from 250 to 830 nm have been obtained.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Liquid Crystal Research Advancements

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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