journal article·2024-08Open access

Synthesis, characterization and estimation of performance parameters of binary ZnO–SnO2/p-Si heterojunction solar cells

Rewrewa Narzary, Honey Brahma, Satyajit Das, Rajib Chetia, Partha Pratim Sahu

Optical Materials· Volume 154

Abstract

The present work demonstrates the successful synthesis of binary ZnO–SnO 2 nanocomposite employing a simple and efficient sol-gel method. The XRD spectra confirmed the formation of a highly crystalline domain indexed to (100) planes of ZnO and (101) and (310) planes of SnO 2 . The UV–vis spectroscopy analysis revealed high transmittance over 85 % and good optical absorption , a desirable aspect for efficiency enhancement of the cell by heightened photo-excited charge carrier generation through an increased number of incident photons being striking at the junction. The optical band gap was determined using the Taucs formula and found to be 3.51 eV. To probe the possible application of ZnO–SnO 2 in Heterojunction Solar Cells (HJSCs), we carried out a numerical simulation for the estimation of cell parameters using MATLAB. The result revealed that the work function (WF) does not have a significant effect on short circuit current density (J sc ), whereas the open-circuit voltage (V oc ), fill factor (FF) and power conversion efficiency (PCE) significantly depend on the material work function. Typically V OC increased from 0.155 V to 0.665 V, FF increased from 0.586 to 0.838 and the PCE could be enhanced from 2.55 % to 15.74 %, with an estimated WF range of 4.5 eV–4.0 eV. The effect of substrate thickness was also studied, indicating increment in parameters in the range from 25 μm to 200 μm, however, no significant effect was noticed for thickness >200 μm. The simulation provides optimization of semiconductor properties through the estimation of cell parameters such as PCE, V oc , J sc and FF for enhanced performance.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: ZnO doping and properties · Chalcogenide Semiconductor Thin Films · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (44)

Show source-provided references
1. Keskenler · J. Mater. Sci. Mater. Electron. · 2019 · 30 · 608210.1007/s10854-019-00909-w ↗
2. Crupi · Thin Solid Films · 2012 · 520 · 443210.1016/j.tsf.2012.02.080 ↗
3. Choi · J. Phys. Appl. Phys. · 2010 · 43
4. Pietruszka · Sol. Energy · 2017 · 155 · 128210.1016/j.solener.2017.07.071 ↗
5. Zhu · Vacuum · 2010 · 84 · 128010.1016/j.vacuum.2010.01.059 ↗
6. Look · Mater. Sci. Eng., B · 2001 · 80 · 38310.1016/S0921-5107(00)00604-8 ↗
7. Rusop · 2012 · vol. 13 · 102
8. Yang · Sensor. Actuator. B Chem. · 2008 · 135 · 5710.1016/j.snb.2008.07.016 ↗
9. Liu · J. Taiwan Inst. Chem. Eng. · 2009 · 40 · 52810.1016/j.jtice.2009.03.008 ↗
10. Zhu · Sensor Actuator Phys. · 2017 · 267 · 24210.1016/j.sna.2017.10.021 ↗
11. Liu · Sensors · 2010 · 10 · 860410.3390/s100908604 ↗
12. Zhang · Nanophotonics · 2017 · 6 · 107310.1515/nanoph-2016-0143 ↗
13. Kek · Mater. Res. Express · 2018 · 510.1088/2053-1591/aadb19 ↗
14. Ji · Appl. Phys. Lett. · 2009 · 94
15. Pietruszka · Sol. Energy Mater. Sol. Cell. · 2016 · 147 · 16410.1016/j.solmat.2015.12.018 ↗
16. Ferhati · Optik-Int. J. Light Electron Optics · 2018 · 153 · 4310.1016/j.ijleo.2017.09.127 ↗
17. Narzary · J. Mater. Sci. Mater. Electron. · 2020 · 31 · 414210.1007/s10854-020-02962-2 ↗
18. Kim · Appl. Phys. Lett. · 2007 · 91
19. Choi · IEEE Trans. Electron. Dev. · 2009 · 57 · 2610.1109/TED.2009.2033769 ↗
20. Chen · Nanoscale Res. Lett. · 2017 · 12 · 14310.1186/s11671-017-1904-4 ↗
21. Thi · Mater. Res. Bull. · 2017 · 96 · 17110.1016/j.materresbull.2017.04.028 ↗
22. Vaiano · Appl. Catal. B Environ. · 2018 · 225 · 19710.1016/j.apcatb.2017.11.075 ↗
23. Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition
24. Shen · Superlattice. Microst. · 2010 · 48 · 42610.1016/j.spmi.2010.08.007 ↗
25. Pietruszka · Sol. Energy Mater. Sol. Cell. · 2015 · 143 · 9910.1016/j.solmat.2015.06.042 ↗
26. Dutta · J. Phys. Chem. C · 2012 · 116 · 2012710.1021/jp302992k ↗
27. Zang · Appl. Phys. Lett. · 2018 · 112
28. Singh · Sens. Lett. · 2017 · 15 · 77110.1166/sl.2017.3870 ↗
29. Katoch · ACS Appl. Mater. Interfaces · 2016 · 8 · 248610.1021/acsami.5b08416 ↗
30. Kim · Sensor. Actuator. B Chem. · 2018 · 267 · 59710.1016/j.snb.2018.04.079 ↗
31. Bai · Sensor. Actuator. B Chem. · 2018 · 266 · 69210.1016/j.snb.2018.03.055 ↗
32. Ali · Superlattice. Microst. · 2016 · 91 · 22510.1016/j.spmi.2016.01.014 ↗
33. Lin · Mater. Sci. Semicond. Process. · 2018 · 87 · 2410.1016/j.mssp.2018.07.003 ↗
34. Shinde · 2017 · 10
35. Lee · Appl. Phys. Lett. · 2014 · 105
36. Lee · ETRI J. · 2015 · 37 · 113510.4218/etrij.15.0114.0743 ↗
37. Saranya · 2015 · vol. 974 · 2115
38. Ali · New J. Chem. · 2019 · 43 · 1058310.1039/C9NJ01270B ↗
39. Kuzhalosai · Spectrochim. Acta Mol. Biomol. Spectrosc. · 2013 · 115 · 87610.1016/j.saa.2013.06.106 ↗
40. Narzary · IEEE Trans. Electron. Dev. · 2020
41. Kanneboina · Sol. Energy · 2018 · 166 · 25510.1016/j.solener.2018.03.068 ↗
42. Das · Food Chem. · 2022
43. Preparation, properties and electronic structure of SnO210.1016/B978-0-08-102096-8.00016-1 ↗
44. Dell'Olio · Electronics · 2016 · 5 · 7310.3390/electronics5040073 ↗