1.3 μm integrated superluminescent light source

In order to increase the optical output power of semiconductor superluminescent devices, a direct coupling method has been used to integrate, monolithically, the superluminescent diode (SLD) with a semiconductor optical amplifier (SOA). By this means, a 1.3 μm InGaAsP/InP integrated superluminescent light source was fabricated. High superluminescent output power was obtained at pulsed condition. An efficient operating scheme was discovered through the discussion of the gain, it not only increases the output power, but also stabilizes the performance of the whole device.