Exploration of the green electroluminescence from Al2O3/Ho2O3 nanolaminate films fabricated by atomic layer deposition on silicon
Source abstract
Abstract
Abstract Green electroluminescence (EL) at 548 nm is obtained from the silicon-based metal-oxide-semiconductor light-emitting devices (MOSLEDs) based on the Al2O3/Ho2O3 nanolaminate films fabricated by atomic layer deposition. The emerald green EL from Ho3+ ions presents a maximum power density of 0.2 mW/cm2, and the excitation cross section up to 4.8 × 10−16 cm2, which is attributed to the impact excitation of the Ho3+ ions by hot electrons in Al2O3 matrix via Poole–Frenkel mechanism. The critical distance for cross relaxation between Ho2O3 dopant layers is ~3.0 nm, concerning both the EL intensities and the lifetime characterizations, which is consistent with previous reports. The difference resulting in the lower excitation efficiency from these Al2O3/Ho2O3 MOSLEDs is speculated to originate from the non-radiative cross-relaxation within the Ho3+ ions due to the abundant energy levels between the excited and ground states.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence · GaN-based semiconductor devices and materials
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