Below-band-gap absorption in undoped GaAs at elevated temperatures
Source abstract
Abstract
Abstract This paper presents results of measurements of optical absorption in undoped epitaxial GaAs for photon energies below the band gap. Absorption spectra were determined from transmission spectra of a thin GaAs layer at several temperatures between 25 °C and 205 °C. We optimized our experiment to investigate the long-wavelength part of the spectrum, where the absorption is relatively low, but significant from the point of view of applications of GaAs in semiconductor lasers. Absorption of 100 cm −1 was observed over 30 nm below the band gap at high temperatures.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor Lasers and Optical Devices · Semiconductor Quantum Structures and Devices · Photonic and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (19)
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1. High-efficiency nanostructured window GaAs solar cells10.1021/nl402680g ↗
2. GaAs thin film nanostructure arrays for III–V solar cell applications
3. Anomalous Urbach tail in GaAs10.1103/PhysRevB.51.1778 ↗
4. Quantum design strategy pushes high-power vertical-external-cavity surface-emitting lasers beyond 100 W10.1002/lpor.201200034 ↗
5. How to enhance a room-temperature operation of diode lasers and their arrays
6. Double-diamond high-contrast-gratings vertical external cavity surface emitting laser10.1088/0022-3727/47/6/065104 ↗
7. Temperature dependence of the energy gap in GaAs and GaP10.1063/1.1657024 ↗
8. Temperature dependence of the Urbach edge in GaAs10.1063/1.359683 ↗
9. Optical absorption edge of semi-insulating GaAs and InP at high temperatures10.1063/1.119226 ↗
10. Tunable semiconductor double-chirped mirror with high negative dispersion10.1109/LPT.2013.2288457 ↗
11. Improved dispersion relations for GaAs and applications to nonlinear optics10.1063/1.1621740 ↗
12. Coherent and incoherent reflection and transmission of multilayer structures10.1007/BF00697414 ↗
13. Adachi · 2005
14. Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs10.1590/S0103-97332010000100003 ↗
15. High-precision determination of the temperature dependence of the fundamental energy gap in gallium arsenide10.1103/PhysRevB.45.1638 ↗
16. Interband critical points of GaAs and their temperature dependence10.1103/PhysRevB.35.9174 ↗
17. Temperature dependence of semiconductor band gaps10.1063/1.104723 ↗
18. Experimental determination of the GaAs and Ga1−xAlx as band-gap energy dependence on temperature and aluminum mole fraction in the direct band-gap region10.1103/PhysRevB.48.4398 ↗
19. Determination of the temperature dependence of the band gap energy of semiconductors from transmission spectra10.1007/s11664-012-2055-0 ↗