Fully Electronically Controlled High-Efficiency Multiferroic Tunnel Junctions Composed of Bilayer CuCrSe₂ with Anti-ferromagnetic and Anti-ferroelectric Properties

Multiferroic tunnel junctions (MFTJs), typically consisting of ferromagnetic (FM) electrodes and a ferroelectric (FE) barrier, have demonstrated broad spintronic applications due to their multiple nonvolatile states. However, they face challenges related to stray fields and FM/FE interfacial issues. Here, a fully electronically controlled read–write spintronic device component MFTJ is designed by simulation using the two-dimensional multiferroic CuCrSe 2 synthesized by experiments. Instead of using separate FM and FE materials as in conventional MFTJs, we introduce van der Waals (vdW) MFTJs based solely on bilayer CuCrSe 2, possessing both A-type antiferromagnetic (AFM) and antiferroelectric (AFE) properties of the ground state. After adjusting bilayer CuCrSe 2, the electric polarization from anti-ferroelectric to ferroelectric, the magnetization state changes from anti-ferromagnetic to ferromagnetic, which can provide both spin polarization and ferroelectric polarization sources within the device. Combining non-equilibrium Green’s function with density functional theory, we systematically investigate the transport properties of CuCrSe 2 -based vdW MFTJs and find superior device performance. This includes a giant tunneling magnetoresistance (TMR) of 2873.38%, a tunneling electroresistance (TER) of up to 3410.71%, and an ultralow resistance-area (RA) product of 0.45 Ω·μm 2 . Due to its small lattice mismatch and large spin–orbit torque of PtTe 2, this material is proposed as an ideal candidate for integration into CuCrSe 2 -based vdW MFTJs, enabling fully electronical control of spintronic devices. These findings suggest that two-dimensional multiferroic CuCrSe 2 holds great promise for the development of high-performance logic and memory devices.