Ultra-broadband and broad-angle absorbers with transition metal dichalcogenide monolayer using Thue–Morse quasi-photonic crystals

Abstract Because of their desirable optical absorption responses, two-dimensional transition metal dichalcogenides have potential applications in optoelectronic devices. However, whether optoelectronic devices based on these materials are capable of absorbing light in a wide optical range is debatable. In this paper, we suggest using Thue–Morse quasi-photonic crystals based on Si3N4, SiO2 layers and transition metal dichalcogenides monolayers for optoelectronic devices. Absorption was calculated on the basis of the transfer matrix method. Optical absorption as large as 90% in a broadband wavelength range was achieved for both transverse-electric and transverse-magnetic polarizations. Our results can be useful for designing photonic devices and perfect absorbers with high absorption efficiencies.