journal article·2025-11

Post-rapid thermal annealing time-dependent engineering of gallium oxide/gallium nitride heterostructures for enhanced optoelectronic performance

A. Muhammad, S.S. Ng, H.J. Quah, N.A. Hamzah, Momin S.M. Abutawahina, Ibrahim Garba Shitu

Optical Materials· Volume 168
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Ga2O3 and related materials · GaN-based semiconductor devices and materials · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (43)

Show source-provided references
1. Thickness dependence of optoelectronic properties of gallium oxide film deposited by electron beam evaporation technique10.1007/s11082-025-08272-3 ↗
2. Oxygen vacancies modulating the photodetector performances in ε-Ga2O3thin films10.1039/D1TC00616A ↗
3. Muhammad · 2025 · 1
4. Effect of annealing temperature on structural and optical properties of gallium oxide thin films deposited by RF-sputtering10.1007/s11082-020-02306-8 ↗
5. Morphological and optical tuning of β-Ga2O3 NRs/p-GaN/sapphire via precursor concentration for high-performance MSM UV photodetector application
6. Effect of annealing conditions on the optical properties and surface morphologies of (2‾01)-oriented β-Ga2O3 crystals
7. Deep-level defects in gallium oxide10.1088/1361-6463/abbeb1 ↗
8. Development and characterization of MSM UV photodetector based on gallium oxide nanostructures10.1016/j.sna.2020.112141 ↗
9. Photoresponse characteristics of bulk gallium nitride Schottky barrier metal-semiconductor-metal ultraviolet photodetectors
10. Experimental and simulation analyses of bulk GaN-based metal-semiconductor-metal ultraviolet photodetectors
11. Deep ultraviolet–visible highly responsivity self-powered photodetector based on β-Ga2O3/GaN heterostructure
12. Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride10.1063/5.0083664 ↗
13. Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films10.1038/s41598-022-07242-z ↗
14. Effect of oxidation time on thermally grown oxide on GaN10.1007/s11665-012-0435-5 ↗
15. Microwave irradiation-assisted deposition of Ga 2 O 3 on III-nitrides for deep-UV opto- electronics Microwave irradiation-assisted deposition of Ga 2 O 3 on III-nitrides for deep-UV opto-electronics
16. Ni3(PO4)2 cocatalyst-supported β-Ga2O3/GaN Photoanodes for highly stable solar water splitting10.1021/acsaem.1c03725 ↗
17. Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors
18. Effects of depositing temperature on structural, optical and laser-induced damage properties of Ga2O3 films deposited by electronic beam evaporation10.1016/j.optlastec.2018.12.042 ↗
19. Effects of post-deposition annealing temperature in nitrogen/oxygen/nitrogen ambient on polycrystalline gallium oxide films
20. Effects of post-deposition annealing temperatures in argon ambient on structural, optical, and electrical characteristics of RF magnetron sputtered gallium oxide films10.1016/j.jmrt.2022.11.150 ↗
21. Effect of annealing temperature on β-Ga2O3 thin films deposited by RF sputtering method
22. Effects of post annealing on electrical performance of polycrystalline Ga2O3 photodetector on sapphire10.1186/s11671-020-03324-x ↗
23. Effect of air annealing on the structural, electrical, and optical properties of V-doped β-Ga2O3 single crystals10.1016/j.jallcom.2022.164590 ↗
24. “ effects of energetic ion irradiation on β-Ga 2 O 3 thin films ,”10.1149/2162-8777/ab8b49 ↗
25. Influence of rapid thermal annealing on the characteristics of Sn-doped Ga2O3 films fabricated using plasma-enhanced atomic layer deposition10.3390/cryst13020301 ↗
26. Rapid thermal annealing process toward enhancement of ITO thin films10.4028/p-auu3nm ↗
27. Influence of different annealing ambient on terbium oxide passivation layers sputtered using the RF sputtering on silicon substrate10.1088/2632-959X/ad52b4 ↗
28. Tailoring In2Ga2ZnO7 thin film properties by annealing time effect
29. “ High-performance β-Ga 2 O 3 thickness dependent solar blind photodetector ,”10.1364/OE.385470 ↗
30. Effects of growth temperature and thickness on structure and optical properties of Ga2O3 films grown by pulsed laser deposition10.1016/j.spmi.2019.05.028 ↗
31. Thickness dependent optical properties of amorphous/polycrystalline Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
32. Effect of annealing temperature on physical and electrical properties of solution-processed polycrystalline In2Ga2ZnO7 thin film10.1007/s10854-020-03516-2 ↗
33. Photocatalytic hydrogen evolution using nanocrystalline gallium oxynitride spinel10.1039/C4TA03676J ↗
34. Fabrication of Ultra-Violet Photodetector with enhanced optoelectronic parameters using low-cost F-doped ZnO nanostructures10.1016/j.sna.2021.113092 ↗
35. Effect of trisodium citrate on morphological , structural , and optical properties of fluorine-doped ZnO structures
36. Enhanced sensitivity of low-cost fabricated fluorine doped ZnO metal semiconductor metal photodetector
37. Fabrication of fluorine and silver co-doped ZnO photodetector using modified hydrothermal method
38. Realization of UV-C absorption in ZnO nanostructures using fluorine and silver co-doping10.1016/j.colcom.2022.100588 ↗
39. Formation of cerium oxide film via post-sputter oxidation of cerium in nitrogen/oxygen/nitrogen ambient10.1016/j.jallcom.2020.156786 ↗
40. Optical constants of titanium-doped gallium oxide thin films
41. Optical and optoelectronic properties of gallium oxide films fabricated by the chemical vapour deposition method
42. The impact of post-deposition annealing durations on the formation of Tb4O7 passivation layer on silicon substrate10.1016/j.ceramint.2024.03.344 ↗
43. Influence of incorporation of gallium oxide nanoparticles on the structural and optical properties of polyvinyl alcohol polymer10.1007/s10904-021-02035-9 ↗