Optoelectronic effect of Al-based buffer layers on Al-doped ZnO thin transparent conductive films on flexible substrates

AZO (Al-doped ZnO) film is a transparent conductive film that offers a simple preparation process, low cost, non-toxicity, and excellent stability. It serves as a high-quality material extensively used in liquid crystal displays , solar cells, and other fields. In this study, AZO thin films were prepared on a PET substrate with an Al 2 O 3 buffer layer using the magnetron sputtering method. The deposition parameters were optimized through the Taguchi method and Grey Correlation Analysis. The results demonstrate that the optimal deposition parameters for achieving superior photoelectric properties during the fabrication of AZO films are 100 W (radio frequency power), 1.0 Pa (sputtering pressure), 20 min (coating time), and 20 °C (substrate temperature). Furthermore, the incorporation of an Al 2 O 3 buffer layer enhances the quality of AZO film on PET substrate. This investigation successfully deposited uniform and highly efficient AZO thin films onto flexible PET substrates at low temperatures, thereby expanding their potential applications in flexible electronics.