New insights into the electronic and optical properties of the Bi4M3O12 (M = Si or Ge) scintillators

Abstract Electronic and optical properties of the Bi4Ge3O12 (BGO) and Bi4Si3O12 (BSO) compounds with eulytine structure have been revisited in terms of the first-principles calculations on density functional theory (DFT) level. Exchange and correlation (XC) effects have been described by Tran–Blaha modified Becke–Johnson (TB-mBJ) potential in its semiconductor variance form. The calculated band gaps agree very well with experimental data obtained from direct reflectivity measurements and disagree with data obtained on the base of ellipsometry technique. The calculated reflectivity spectra also agree very well with low-temperature experimental data. These facts prove that present approach is more successful than previous DFT approaches which failed to describe correctly either one or both of these properties. On the basis of this observation, it was concluded that: (1) DFT calculations with TB-mBJ XC potential correctly describe the BGO and BSO electronic structures, whose principal features are demonstrated; (2) the BGO and BSO band gaps should be around 5.0 and 5.4 eV respectively and their experimental optical absorption edges should be masked by exciton effects, in agreement with the conclusions from reflectivity measurements.