Fabrication and characterization of the red photodetector based on CsPbI3/n-Si heterojunction
Source abstract
Abstract
Abstract CsPbI3 thin films with orthorhombic phase were prepared on Si (100) substrates by the pulse laser deposition (PLD). The photoelectric characteristics of the CsPbI3 films had been investigated. The photodetector based on CsPbI3/n-Si heterojunction was sensitive to red wavelengths, showing the peak responsivity of 51.9 mA/W (695 nm). The excellent photoelectric characteristics of the CsPbI3 films grown by PLD are clearly demonstrated and should be widely applicable to optoelectronic devices.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Perovskite Materials and Applications · Advanced Semiconductor Detectors and Materials · Optical properties and cooling technologies in crystalline materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (37)
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