Emergence of Topological Edge States in Oxidized α-In2Se3 Nanosheets: Implications for Field-Effect Transistors
Source abstract
Abstract
Interest in the coexistence of intrinsic polarization and nontrivial band topology in a single material has grown rapidly in recent years. Although some progress has been made in this regard, in many cases, oxygenation has been reported to lead to degradation of one or both properties. In this scenario, employing first-principles calculations, we demonstrate that oxygen adsorption onto the surface of the noncentrosymmetric structure of two-dimensional (2D) In2Se3 results in the coexistence of innate electronic polarization and topologically protected edge states, rendering In2Se3O a stable topological insulator with conventional and topological band gaps greater than the thermal energy at room temperature. Furthermore, the feasibility of controlling the topological phase by field-effect switching is also demonstrated.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Topological Materials and Phenomena · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Federal University of Espirito Santo, Vitória, 29075-910 ES, Brazil
Federal Institute of Education, Science and Technology of Espírito Santo, Cariacica, 29150-410 ES, Brazil
Federal Institute of Education, Science and Technology of Espírito Santo, Ibatiba, 29395-000 ES, Brazil
Departamento de Física de la Materia Condensada, Instituto Nicolás Cabrera (INC), and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, Cantoblanco 28049, Madrid, Spain
Funding
Funda????o Estadual de Amparo ?? Pesquisa do Estado do Esp??rito Santo · Comunidad de Madrid · Fundaci??n Ram??n Areces · Ministerio de Econom??a y Competitividad · Conselho Nacional de Desenvolvimento Cient??fico e Tecnol??gico · Coordena????o de Aperfei??oamento de Pessoal de N??vel Superior · Seventh Framework Programme
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