Density Functional Theory Study of Polarization-Induced Electron Confinement by Dilute Boron Alloying in ε-Ga2O3 Nanometer-Thick Film for High Electron Mobility Transistor
Abstract
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Semiconductor materials and devices
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Affiliations
Advanced Materials Thrust, Function Hub, The Hong Kong University of Science and Technology (Guangzhou), Guangzhou 511453, Guangdong, China
Centre of Advanced Materials, Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, Kuala Lumpur 50603, Malaysia
Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong, China
Guangzhou Municipal Key Laboratory of Materials Informatics, The Hong Kong University of Science and Technology (Guangzhou), Guangzhou 511453, Guangdong, China
Guangzhou Municipal Key Laboratory of Integrated Circuits Design, The Hong Kong University of Science and Technology (Guangzhou), Guangzhou 511453, Guangdong, China
Funding
State Administration of Foreign Experts Affairs · Songshan Lake Materials Laboratory · Guangzhou Municipal Science and Technology Project · Hong Kong University of Science and Technology