Imaging junctions in two-dimensional semiconductor nanosheet networks
Source abstract
Abstract
Abstract This study explores the challenges associated with translating electrical characteristics of individual two-dimensional semiconductor nanosheets into a network of partially overlapping sheets. Such systems typically suffer from high-energy barriers required to overcome the junctions formed between the adjacent nanosheets, and consequently quench the current passing through the network. We use in-operando Kelvin probe force microscopy to image electrostatic potential profiles during the operation of MoS 2 nanosheet network transistors. Direct imaging of the potential drops allows us to distinguish contributions from individual nanosheets and those from junctions, correlated by the junction-related potential drops with the network morphology. A diagram-based model is developed to describe the system numerically and to estimate the current path formation probabilities. Finally, a correlation with the integral electrical characteristics of the nanosheet-based transistors is made using a robust Y-function approach. It is shown that the total junction resistance is well estimated by the proposed equivalent circiut model.
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Research context
OpenAlex topics: 2D Materials and Applications · Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (45)
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1. Ippolito, S. et al. Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices. Nat. Nanotechnol. 16, 592–598 (2021).10.1038/s41565-021-00857-9 ↗
2. Kelly, A., O’Suilleabhain, D., Gabbett, C. & Coleman, J. The electrical conductivity of solution-processed nanosheet networks. Nat. Rev. Mater. 7, 217–234 (2022).10.1038/s41578-021-00386-w ↗
3. Gabbett, C. et al. Understanding how junction resistances impact the conduction mechanism in nano-networks. Nat. Commun 15, 4517 (2024).10.1038/s41467-024-48614-5 ↗
4. Witomska, S., Leydecker, T., Ciesielski, A. & Samorí, P. Production and patterning of liquid phase-exfoliated 2d sheets for applications in optoelectronics. Adv. Funct. Mater. 29, 1901126 (2019).10.1002/adfm.201901126 ↗
5. Backes, C. et al. Production and processing of graphene and related materials. 2D Mater 7, 022001 (2020).10.1088/2053-1583/ab1e0a ↗
6. Piatti, E. et al. Charge transport mechanisms in inkjet-printed thin-film transistors based on two-dimensional materials. Nat. Electron 4, 893–905 (2021).10.1038/s41928-021-00684-9 ↗
7. Das, S. et al. Transistors based on two-dimensional materials for future integrated circuits. Nat. Electron. 4, 786–799 (2021).10.1038/s41928-021-00670-1 ↗
8. Yao, H., Hsieh, Y.-P., Kong, J. & Hofmann, M. Modelling electrical conduction in nanostructure assemblies through complex networks. Nat. Mater. 19, 745–751 (2020).10.1038/s41563-020-0664-1 ↗
9. Shen, P.-C. et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature 593, 211–217 (2021).10.1038/s41586-021-03472-9 ↗
10. Zhu, Z., Kim, J.-S., Moody, M. J. & Lauhon, L. J. Edge and interface resistances create distinct trade-offs when optimizing the microstructure of printed van der Waals thin-film transistors. ACS Nano 17, 575–586 (2023).10.1021/acsnano.2c09527 ↗
11. Minj, A. et al. Direct assessment of defective regions in monolayer MoS2 field-effect transistors through in situ scanning probe microscopy measurements. ACS Nano 18, 10653–10666 (2024).10.1021/acsnano.4c03080 ↗
12. Ber, E., Grady, R. W., Pop, E. & Yalon, E. Uncovering the different components of contact resistance to atomically thin semiconductors. Adv. Electron. Mater. 9, 2201342 (2023).10.1002/aelm.202201342 ↗
13. Gomes da Rocha, C. et al. Ultimate conductivity performance in metallic nanowire networks. Nanoscale 7, 13011–13016 (2015).10.1039/C5NR03905C ↗
14. Zorn, N. F. & Zaumseil, J. Charge transport in semiconducting carbon nanotube networks. Appl. Phys. Rev. 8, 041318 (2021).10.1063/5.0065730 ↗
15. Kelly, A. G. et al. All-printed thin-film transistors from networks of liquid-exfoliated nanosheets. Science 356, 69–73 (2017).10.1126/science.aal4062 ↗
16. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer mos2 transistors. Nat. Nanotechnol. 6(3), 1147–50 (2011).
17. Smyth, C. M., Addou, R., McDonnell, S., Hinkle, C. L. & Wallace, R. M. Contact metal-mos2 interfacial reactions and potential implications on mos2-based device performance. J. Phys. Chem. C 120, 14719–14729 (2016).10.1021/acs.jpcc.6b04473 ↗
18. Zeng, X., Hirwa, H., Metel, S., Nicolosi, V. & Wagner, V. Solution processed thin film transistor from liquid phase exfoliated MoS2 flakes. Solid-State Electron. 141, 58–64 (2018).10.1016/j.sse.2017.12.005 ↗
19. Lin, Z. et al. Solution-processable 2D semiconductors for high-performance large-area electronics. Nature 562, 254–258 (2018).10.1038/s41586-018-0574-4 ↗
20. Neilson, J., Avery, M. P. & Derby, B. Tiled monolayer films of 2d molybdenum disulfide nanoflakes assembled at liquid/liquid interfaces. ACS Appl. Mater. Interfaces 12, 25125–25134 (2020).10.1021/acsami.0c03794 ↗
21. Matković, A. et al. Interfacial band engineering of MoS2/gold interfaces using pyrimidine-containing self-assembled monolayers: Toward contact-resistance-free bottom-contacts. Adv. Electron. Mater. 6, 2000110 (2020).10.1002/aelm.202000110 ↗
22. Aslam, M. A. et al. All van der Waals semiconducting PtSe2 field effect transistors with low contact resistance graphite electrodes. Nano Lett. 24, 6529–6537 (2024).10.1021/acs.nanolett.4c00956 ↗
23. Aslam, M. A. et al. Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials. NPJ 2D Mater. Appl 6, 176 (2022).10.1038/s41699-022-00356-y ↗
24. Puntambekar, K. P., Pesavento, P. V. & Frisbie, C. D. Surface potential profiling and contact resistance measurements on operating pentacene thin-film transistors by Kelvin probe force microscopy. Appl. Phys. Lett. 83, 5539–5541 (2003).10.1063/1.1637443 ↗
25. Yu, Y.-J. et al. Tuning the graphene work function by electric field effect. Nano Lett. 9, 3430–3434 (2009).10.1021/nl901572a ↗
26. Wang, Y. et al. P-type electrical contacts for 2D transition-metal dichalcogenides. Nature 610, 61–66 (2022).10.1038/s41586-022-05134-w ↗
27. Liu, Y. et al. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions. Nature 557, 696–700 (2018).10.1038/s41586-018-0129-8 ↗
28. Neilson, J. et al. Production of ultrathin and high-quality nanosheet networks via layer-by-layer assembly at liquid-liquid interfaces. ACS Nano 18, 32589–32601 (2024).10.1021/acsnano.4c09745 ↗
29. Žeželj, M. & Stanković, I. From percolating to dense random stick networks: Conductivity model investigation. Phys. Rev. B 86, 134202 (2012).10.1103/PhysRevB.86.134202 ↗
30. Manning, H. G. et al. Emergence of winner-takes-all connectivity paths in random nanowire networks. Nat. Commun. 9, 1–9 (2018).10.1038/s41467-018-05517-6 ↗
31. Sebastian, B. et al. On the relationship between morphology and conductivity in nanosheet networks. Carbon 171, 306–319 (2021).10.1016/j.carbon.2020.09.015 ↗
32. Nečas, D. & Klapetek, P. Gwyddion: an open-source software for SPM data analysis. Cent. Eur. J. Phys. 10, 181–188 (2012).
33. Kelly, A. G., O’Suilleabhain, D., Gabbett, C. & Coleman, J. N. The electrical conductivity of solution-processed nanosheet networks. Nat. Rev. Mater. 7, 217–234 (2021).10.1038/s41578-021-00386-w ↗
34. He, S., Xu, X., Qiu, X., He, Y. & Zhou, C. Conductivity of two-dimensional disordered nanowire networks: Dependence on length-ratio of conducting paths to all nanowires. J. Appl. Phys. 124, 054302 (2018).10.1063/1.5045176 ↗
35. Higgins, T. M. et al. Electrolyte-gated n-type transistors produced from aqueous inks of WS2 nanosheets. Adv. Funct. Mater. 29, 1804387 (2019).10.1002/adfm.201804387 ↗
36. Carey, T. et al. Inkjet printed circuits with 2d semiconductor inks for high-performance electronics. Adv. Electron. Mater. 7, 2100112 (2021).10.1002/aelm.202100112 ↗
37. Jain, A. et al. One-dimensional edge contacts to a monolayer semiconductor. Nano Lett. 19, 6914–6923 (2019).10.1021/acs.nanolett.9b02166 ↗
38. Xu, Y., Minari, T., Tsukagoshi, K., Chroboczek, J. A. & Ghibaudo, G. Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors. J. Appl. Phys. 107, 114507 (2010).10.1063/1.3432716 ↗
39. Jeong, S. H., Liu, N., Park, H., Hong, Y. K. & Kim, S. Temperature-dependent electrical properties of al2o3-passivated multilayer mos2 thin-film transistors. Appl. Sci. 8, 424 (2018).10.3390/app8030424 ↗
40. Ghibaudo, G. New method for the extraction of MOSFET parameters. Electron. Lett. 24, 543–545 (1988).10.1049/el:19880369 ↗
41. Gupta, S. et al. Approaching barrier-free contacts to monolayer MoS2 employing [Co/Pt] multilayer electrodes. NPG Asia Mater. 13, 1–7 (2021).10.1038/s41427-021-00284-1 ↗
42. Andrews, K., Bowman, A., Rijal, U., Chen, P.-Y. & Zhou, Z. Improved contacts and device performance in MoS2 transistors using a 2D semiconductor interlayer. ACS Nano 14, 6232–6241 (2020).10.1021/acsnano.0c02303 ↗
43. Allain, A., Kang, J., Banerjee, K. & Kis, A. Electrical contacts to two-dimensional semiconductors. Nat. Mater. 14, 1195–1205 (2015).10.1038/nmat4452 ↗
44. Jana, S. P., Gupta, S. & Gupta, A. K. Enhanced performance of MoS2/sio2 field-effect transistors by hexamethyldisilazane (HMDS) encapsulation. Appl. Phys. Lett. 124, 243505 (2024).10.1063/5.0204634 ↗
45. Wani, S.-S. et al. Enhanced electrical transport properties of molybdenum disulfide field-effect transistors by using alkali metal fluorides as dielectric capping layers. ACS Nano 18, 10776–10787 (2024).10.1021/acsnano.3c11025 ↗