Efficient energy transfer and photoluminescence enhancement in 2D MoS2/bulk InSe van der Waals heterostructures
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Abstract
Abstract Heterostructures between 2D and 3D electron systems remain critically important in developing novel and efficient optoelectronic and electronic devices. In this study, a vertical heterojunction between monolayer MoS2 and bulk InSe was developed. This heterojunction exhibits a type-I band alignment that facilitates rapid energy transfer from the wide bandgap MoS2 to the narrow bandgap InSe resulting in quenching of the MoS2 photoluminescence (PL) emission and enhancement of the A exciton emission in InSe. Temperature-dependent PL measurements of MoS2 on SiO2, MoS2 on InSe, and bare InSe revealed the critical role of defect trapping and electron-phonon coupling in the optical response of MoS2 on InSe. These results demonstrate that heterostructures combining monolayer MoS2 on bulk InSe, showing marked improvement relative to bare InSe, would be advantageous when incorporated into optoelectronic devices such as photodetectors, light emitters, and color converters and highlights the benefit of creating van der Waals (vdW) heterostructures with tailored properties.
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Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Graphene research and applications
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References (85)
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1. Castellanos-Gomez, A. et al. Van Der Waals heterostructures. Nat. Rev. Methods Primer 2, 58 (2022).10.1038/s43586-022-00139-1 ↗
2. Kanungo, S., Ahmad, G., Sahatiya, P., Mukhopadhyay, A. & Chattopadhyay, S. 2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects. Npj 2D Mater. Appl. 6, 83 (2022).10.1038/s41699-022-00352-2 ↗
3. Khan, S. et al. 2D heterostructures for highly efficient photodetectors: from advanced synthesis to characterizations, mechanisms, and device applications. Adv. Photonics Res. 3, 2100342 (2022).10.1002/adpr.202100342 ↗
4. Liu, R. et al. Band alignment engineering in two‐dimensional transition metal dichalcogenide‐based heterostructures for photodetectors. Small Struct 2, 2000136 (2021).10.1002/sstr.202000136 ↗
5. Parker, M. Heterostructures make light work of photodetection. Nat. Electron. 5, 257–257 (2022).10.1038/s41928-022-00781-3 ↗
6. Idisi, D. O. & Mwakikunga, B. Two-dimensional layered metal dichalcogenides-based heterostructures for solar cells applications: a review. Sol. Energy 263, 111981 (2023).10.1016/j.solener.2023.111981 ↗
7. Molaei, M. J., Younas, M. & Rezakazemi, M. Van Der Waals heterostructures in ultrathin 2D solar cells: state-of-the-art review. Mater. Sci. Eng. B 285, 115936 (2022).10.1016/j.mseb.2022.115936 ↗
8. Furchi, M. M. et al. Device physics of van Der Waals heterojunction solar cells. Npj 2D Mater. Appl. 2, 3 (2018).10.1038/s41699-018-0049-3 ↗
9. Kennes, D. M. et al. Moiré heterostructures as a condensed-matter quantum simulator. Nat. Phys. 17, 155–163 (2021).10.1038/s41567-020-01154-3 ↗
10. Regan, E. C. et al. Emerging exciton physics in transition metal dichalcogenide heterobilayers. Nat. Rev. Mater. 7, 778–795 (2022).10.1038/s41578-022-00440-1 ↗
11. Shabani, S. et al. Deep Moiré potentials in twisted transition metal dichalcogenide bilayers. Nat. Phys. 17, 720–725 (2021).10.1038/s41567-021-01174-7 ↗
12. Ceballos, F., Bellus, M. Z., Chiu, H.-Y. & Zhao, H. Ultrafast charge separation and indirect exciton formation in a MoS2–MoSe2 van Der Waals heterostructure. ACS Nano 8, 12717–12724 (2014).10.1021/nn505736z ↗
13. Jin, C. et al. Ultrafast dynamics in van Der Waals heterostructures. Nat. Nanotechnol. 13, 994–1003 (2018).10.1038/s41565-018-0298-5 ↗
14. Pham, P. V. et al. 2D heterostructures for ubiquitous electronics and optoelectronics: principles, opportunities, and challenges. Chem. Rev. 122, 6514–6613 (2022).10.1021/acs.chemrev.1c00735 ↗
15. Kim, S. et al. Graphene-GaN Schottky diodes. Nano Res. 8, 1327–1338 (2015).10.1007/s12274-014-0624-7 ↗
16. Yin, Y. et al. High‐speed and high‐responsivity hybrid silicon/black‐phosphorus waveguide photodetectors at 2 Μm. Laser Photonics Rev. 13, 1900032 (2019).10.1002/lpor.201900032 ↗
17. Wan, X. et al. A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon? Npj 2D Mater. Appl. 1, 4 (2017).10.1038/s41699-017-0008-4 ↗
18. Bandurin, D. A. et al. High electron mobility, quantum hall effect and anomalous optical response in atomically thin InSe. Nat. Nanotechnol. 12, 223–227 (2017).10.1038/nnano.2016.242 ↗
19. Song, S. et al. Wafer-scale growth of two-dimensional, phase-pure InSe. Matter 6, 3483–3498 (2023).10.1016/j.matt.2023.07.012 ↗
20. Miao, J. et al. Heterojunction tunnel triodes based on two-dimensional metal selenide and three-dimensional silicon. Nat. Electron. 5, 744–751 (2022).10.1038/s41928-022-00849-0 ↗
21. Jiang, J., Xu, L., Qiu, C. & Peng, L.-M. Ballistic two-dimensional InSe transistors. Nature 616, 470–475 (2023).10.1038/s41586-023-05819-w ↗
22. Li, Y. et al. Efficient carrier multiplication in self-powered near-ultraviolet γ-InSe/graphene heterostructure photodetector with external quantum efficiency exceeding 161. Nano Lett. 24, 7252–7260 (2024).10.1021/acs.nanolett.4c01238 ↗
23. Liu, W. et al. Self-powered and broadband opto-sensor with bionic visual adaptation function based on multilayer γ-InSe flakes. Light Sci. Appl. 12, 180 (2023).10.1038/s41377-023-01223-1 ↗
24. Pike, N. A. et al. Understanding the origin and implication of the indirect-to-direct bandgap transition in multilayer InSe. J. Phys. Chem. C 128, 7957–7967 (2024).10.1021/acs.jpcc.4c01104 ↗
25. Pasquale, G. et al. Flat-band-induced many-body interactions and exciton complexes in a layered semiconductor. Nano Lett. 22, 8883–8891 (2022).10.1021/acs.nanolett.2c02965 ↗
26. Pasquale, G. et al. Electrical detection of the flat-band dispersion in van der waals field-effect structures. Nat. Nanotechnol. https://doi.org/10.1038/s41565-023-01489-x (2023).10.1038/s41565-023-01489-x ↗
27. Liang, Y. et al. Strong exciton–exciton scattering of exfoliated van Der Waals InSe toward efficient continuous-wave near-infrared P-band emission. Nano Lett. 23, 4058–4065 (2023).10.1021/acs.nanolett.3c00932 ↗
28. Li, C. et al. Room-temperature near-infrared excitonic lasing from mechanically exfoliated InSe microflake. ACS Nano 16, 1477–1485 (2022).10.1021/acsnano.1c09844 ↗
29. Yao, Y.-T. et al. High-responsivity photodetectors made of indium selenide with visible to near-infrared photodetection. Chin. J. Phys. 90, 839–845 (2024).10.1016/j.cjph.2024.02.035 ↗
30. Tamalampudi, S. R. et al. High‐speed waveguide‐integrated InSe photodetector on SiN photonics for near‐infrared applications. Adv. Photonics Res. 4, 2300162 (2023).10.1002/adpr.202300162 ↗
31. Yang, H.-W. et al. Ultraefficient ultraviolet and visible light sensing and Ohmic contacts in high-mobility InSe nanoflake photodetectors fabricated by the focused ion beam technique. ACS Appl. Mater. Interfaces 10, 5740–5749 (2018).10.1021/acsami.7b15106 ↗
32. Jiang, J. et al. Stable InSe transistors with high-field effect mobility for reliable nerve signal sensing. Npj 2D Mater. Appl. 3, 1–8 (2019).10.1038/s41699-019-0110-x ↗
33. Arora, H. et al. Effective hexagonal boron nitride passivation of few-layered InSe and GaSe to enhance their electronic and optical properties. ACS Appl. Mater. Interfaces 11, 43480–43487 (2019).10.1021/acsami.9b13442 ↗
34. Zhang, L. et al. Optoelectronic gas sensor based on few-layered InSe nanosheets for NO2 detection with ultrahigh antihumidity ability. Anal. Chem. 92, 11277–11287 (2020).10.1021/acs.analchem.0c01941 ↗
35. Yang, F.-S. et al. Oxidation-boosted charge trapping in ultra-sensitive van Der Waals materials for artificial synaptic features. Nat. Commun. 11, 2972 (2020).10.1038/s41467-020-16766-9 ↗
36. Dai, M. et al. Properties, synthesis, and device applications of 2D layered InSe. Adv. Mater. Technol. 7, 2200321 (2022).10.1002/admt.202200321 ↗
37. Shu, Y. et al. 2D BP/InSe heterostructures as a nonlinear optical material for ultrafast photonics. Nanomaterials 12, 1809 (2022).10.3390/nano12111809 ↗
38. Liao, L. et al. InSe:Ge-doped InSe van Der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors. Nanoscale 14, 5412–5424 (2022).10.1039/D1NR07150E ↗
39. Sun, Z. et al. Tailoring the energy funneling across the interface in InSe/MoS2 heterostructures by electrostatic gating and strain engineering. Adv. Opt. Mater. 9, 2100438 (2021).10.1002/adom.202100438 ↗
40. Claro, M. S. et al. Van Der Waals heteroepitaxy of GaSe and InSe, quantum wells, and superlattices. Adv. Funct. Mater. 33, 2211871 (2023).10.1002/adfm.202211871 ↗
41. Xu, B. et al. Charge transfer at the hetero‐interface of WSe2/InSe induces efficient doping to achieve multi‐functional lateral homo‐junctions. Adv. Electron. Mater. 7, 2100584 (2021).10.1002/aelm.202100584 ↗
42. Lei, T. et al. Ambipolar photoresponsivity in an ultrasensitive photodetector based on a WSe 2/InSe heterostructure by a photogating effect. ACS Appl. Mater. Interfaces 13, 50213–50219 (2021).10.1021/acsami.1c12330 ↗
43. Yan, Y. et al. Reversible half wave rectifier based on 2D InSe/GeSe heterostructure with near‐broken band alignment. Adv. Sci. 8, 1903252 (2021).10.1002/advs.201903252 ↗
44. Nüsse, S. et al. Femtosecond coherent polariton dynamics in the layered III-VI semiconductor InSe. Phys. Rev. B 55, 4620–4627 (1997).10.1103/PhysRevB.55.4620 ↗
45. Bergeron, A., Gradziel, C., Leonelli, R. & Francoeur, S. Probing hyperbolic and surface phonon-polaritons in 2D materials using Raman spectroscopy. Nat. Commun. 14, 4098 (2023).10.1038/s41467-023-39809-3 ↗
46. Chae, W. H., Cain, J. D., Hanson, E. D., Murthy, A. A. & Dravid, V. P. Substrate-induced strain and charge doping in CVD-grown monolayer MoS2. Appl. Phys. Lett. 111, 143106 (2017).10.1063/1.4998284 ↗
47. Shubina, T. V. et al. InSe as a case between 3D and 2D layered crystals for excitons. Nat. Commun. 10, 3479 (2019).10.1038/s41467-019-11487-0 ↗
48. Klingshirn, C. The luminescence of ZnO under high one‐ and two‐quantum excitation. Phys. Status Solidi B 71, 547–556 (1975).10.1002/pssb.2220710216 ↗
49. Brotons-Gisbert, M. et al. Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide. Nat. Commun. 10, 3913 (2019).10.1038/s41467-019-11920-4 ↗
50. Mak, K. F. & Shan, J. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. Nat. Photonics 10, 216–226 (2016).10.1038/nphoton.2015.282 ↗
51. Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. V. & Kis, A. 2D transition metal dichalcogenides. Nat. Rev. Mater. 2, 17033 (2017).10.1038/natrevmats.2017.33 ↗
52. Mueller, T. & Malic, E. Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors. Npj 2D Mater. Appl. 2, 29 (2018).10.1038/s41699-018-0074-2 ↗
53. Hong, X. et al. Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures. Nat. Nanotechnol. 9, 682–686 (2014).10.1038/nnano.2014.167 ↗
54. Chen, H. et al. Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures. Nat. Commun. 7, 12512 (2016).10.1038/ncomms12512 ↗
55. Selig, M. et al. Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides. Nat. Commun. 7, 13279 (2016).10.1038/ncomms13279 ↗
56. Chan, Y. et al. Exciton lifetime and optical line width profile via exciton–phonon interactions: theory and first-principles calculations for monolayer MoS2. Nano Lett. 23, 3971–3977 (2023).10.1021/acs.nanolett.3c00732 ↗
57. Hu, Z. et al. Interfacial charge and energy transfer in van Der Waals heterojunctions. InfoMat 4, e12290 (2022).10.1002/inf2.12290 ↗
58. Özçelik, V. O., Azadani, J. G., Yang, C., Koester, S. J. & Low, T. Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching. Phys. Rev. B 94, 035125 (2016).10.1103/PhysRevB.94.035125 ↗
59. O’Donnell, K. P. & Chen, X. Temperature dependence of semiconductor band gaps. Appl. Phys. Lett. 58, 2924–2926 (1991).10.1063/1.104723 ↗
60. Camassel, J., Merle, P., Mathieu, H. & Chevy, A. Excitonic absorption edge of indium selenide. Phys. Rev. B 17, 4718–4725 (1978).10.1103/PhysRevB.17.4718 ↗
61. Balakrishnan, N. et al. Room temperature electroluminescence from mechanically formed van Der Waals III-VI homojunctions and heterojunctions. Adv. Opt. Mater. 2, 1064–1069 (2014).10.1002/adom.201400202 ↗
62. Geng, J. et al. Unusually strong near‐infrared photoluminescence of highly transparent bulk InSe flakes. Adv. Funct. Mater. https://doi.org/10.1002/adfm.202413672 (2024).10.1002/adfm.202413672 ↗
63. Shibata, H. Negative thermal quenching curves in photoluminescence of solids. Jpn. J. Appl. Phys. 37, 550 (1998).10.1143/JJAP.37.550 ↗
64. Reshchikov, M. A. Mechanisms of thermal quenching of defect‐related luminescence in semiconductors. Phys. Status Solidi A 218, 2000101 (2021).10.1002/pssa.202000101 ↗
65. Gouskov, A., Camassel, J. & Gouskov, L. Growth and characterization of III–VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe. Prog. Cryst. Growth Charact. 5, 323–413 (1982).10.1016/0146-3535(82)90004-1 ↗
66. Kress-Rogers, E., Nicholas, R. J., Portal, J. C. & Chevy, A. Cyclotron resonance studies on bulk and two-dimensional conduction electrons in InSe. Solid State Commun. 44, 379–383 (1982).10.1016/0038-1098(82)90874-2 ↗
67. Shi, L. et al. Oxidation mechanism and protection strategy of ultrathin indium selenide: insight from theory. J. Phys. Chem. Lett. 8, 4368–4373 (2017).10.1021/acs.jpclett.7b02059 ↗
68. Wang, R. et al. Unveiling the stimulated robust carrier lifetime of surface‐bound excitons and their photoresponse in InSe. Adv. Mater. Interfaces 6, 1900171 (2019).10.1002/admi.201900171 ↗
69. Abha & Warrier, A. V. R. Photoluminescence studies on the layer semiconductor InSe. J. Appl. Phys. 53, 5169–5171 (1982).10.1063/1.331393 ↗
70. Nicholas, R. J., Kress-Rogers, E., Portal, J. C., Galibert, J. & Chevy, A. Two-dimensional behaviour due to electrons bound at defects in InSe. Surf. Sci. 113, 339–346 (1982).10.1016/0039-6028(82)90613-6 ↗
71. Politano, A. et al. Indium selenide: an insight into electronic band structure and surface excitations. Sci. Rep. 7, 3445 (2017).10.1038/s41598-017-03186-x ↗
72. Baldereschi, A. & Hopfield, J. J. Binding to isoelectronic impurities in semiconductors. Phys. Rev. Lett. 28, 171–174 (1972).10.1103/PhysRevLett.28.171 ↗
73. Manjón, F. J. et al. Band structure of indium selenide investigated by intrinsic photoluminescence under high pressure. Phys. Rev. B 70, 125201 (2004).10.1103/PhysRevB.70.125201 ↗
74. Trovatello, C. et al. The ultrafast onset of exciton formation in 2D semiconductors. Nat. Commun. 11, 5277 (2020).10.1038/s41467-020-18835-5 ↗
75. Zhong, C. et al. Hot carrier and surface recombination dynamics in layered InSe crystals. J. Phys. Chem. Lett. 10, 493–499 (2019).10.1021/acs.jpclett.8b03543 ↗
76. Kresse, G. & Hafner, J. Ab initio molecular dynamics for open-shell transition metals. Phys. Rev. B 48, 13115–13118 (1993).10.1103/PhysRevB.48.13115 ↗
77. Kresse, G. & Furthmüller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6, 15–50 (1996).10.1016/0927-0256(96)00008-0 ↗
78. Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169–11186 (1996).10.1103/PhysRevB.54.11169 ↗
79. Blöchl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953–17979 (1994).10.1103/PhysRevB.50.17953 ↗
80. Kresse, G. & Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59, 1758–1775 (1999).10.1103/PhysRevB.59.1758 ↗
81. Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865–3868 (1996).10.1103/PhysRevLett.77.3865 ↗
82. Grimme, S., Antony, J., Ehrlich, S. & Krieg, H. A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu. J. Chem. Phys. 132, 154104 (2010).10.1063/1.3382344 ↗
83. Freysoldt, C., Boeck, S. & Neugebauer, J. Direct minimization technique for metals in density functional theory. Phys. Rev. B 79, 241103 (2009).10.1103/PhysRevB.79.241103 ↗
84. Monkhorst, H. J. & Pack, J. D. Special points for Brillouin-Zone integrations. Phys. Rev. B 13, 5188–5192 (1976).10.1103/PhysRevB.13.5188 ↗
85. Heyd, J., Scuseria, G. E. & Ernzerhof, M. Hybrid functionals based on a screened coulomb potential. J. Chem. Phys. 118, 8207–8215 (2003).10.1063/1.1564060 ↗