Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2
Source abstract
Abstract
The successful integration of ultrathin high-κ insulators is essential for the advancement of ultra-scaled field-effect transistors (FETs) based on two-dimensional (2D) semiconductors in future technology nodes. However, defects within the high-κ stack or at the interfaces can significantly degrade the performance of these “interface-only” devices, raising questions regarding their long-term reliability. Here, we study the reliability of monolayer MoS 2 FETs on ultra-thin high-κ HfO 2 . Interestingly, we observe a two-stage threshold voltage shift (Δ V TH ) under positive bias temperature stress (PBTS) and hot carrier degradation (HCD). This two-stage Δ V TH is absent in devices fabricated on exfoliated hBN, suggesting that the donor state generation (negative Δ V TH ) is induced by atomic-layer-deposition (ALD) processes in HfO 2 -based devices. Elastic Recoil Detection Analysis (ERDA) indicates that hydrogen, likely from the ALD precursor, is a probable cause, highlighting the need for ALD process refinement to improve 2D FET stability for CMOS compatibility.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (51)
Show source-provided references
1. Chhowalla, M., Jena, D. & Zhang, H. Two-dimensional semiconductors for transistors. Nat. Rev. Mater. 1, 16052 (2016).10.1038/natrevmats.2016.52 ↗
2. Liu, Y. et al. Promises and prospects of two-dimensional transistors. Nature 591, 43–53 (2021).10.1038/s41586-021-03339-z ↗
3. Desai, S. B. et al. MoS2 transistors with 1-nanometer gate lengths. Science 354, 99–102 (2016).10.1126/science.aah4698 ↗
4. Mannix, A. J. et al. Robotic four-dimensional pixel assembly of van der Waals solids. Nat. Nanotechnol. 17, 361–366 (2022).10.1038/s41565-021-01061-5 ↗
5. Mennel, L. et al. Ultrafast machine vision with 2D material neural network image sensors. Nature 579, 62–66 (2020).10.1038/s41586-020-2038-x ↗
6. Migliato Marega, G. et al. Logic-in-memory based on an atomically thin semiconductor. Nature 587, 72–77 (2020).10.1038/s41586-020-2861-0 ↗
7. Chen, S. et al. Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks. Nat. Electron. 3, 638–645 (2020).10.1038/s41928-020-00473-w ↗
8. Lan, H.-Y. et al. Gate-Tunable Plasmon-Enhanced Photodetection in a Monolayer MoS 2 Phototransistor with Ultrahigh Photoresponsivity. Nano Lett. 21, 3083–3091 (2021).10.1021/acs.nanolett.1c00271 ↗
9. Tong, L. et al. Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide. Nat. Electron. https://doi.org/10.1038/s41928-022-00881-0 (2022).10.1038/s41928-022-00881-0 ↗
10. Shen, P. C. et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature 593, 211–217 (2021).10.1038/s41586-021-03472-9 ↗
11. Li, W. et al. Approaching the quantum limit in two-dimensional semiconductor contacts. Nature 613, 274–279 (2023).10.1038/s41586-022-05431-4 ↗
12. Lan, H.-Y., Oleshko, V. P., Davydov, A. V., Appenzeller, J. & Chen, Z. Dielectric Interface Engineering for High-Performance Monolayer MoS2 Transistors via TaOxInterfacial Layer. IEEE Trans. Electron Devices 70, 2067–2074 (2023).10.1109/TED.2023.3251965 ↗
13. Jiang, J., Xu, L., Qiu, C. & Peng, L.-M. Ballistic two-dimensional InSe transistors. Nature https://doi.org/10.1038/s41586-023-05819-w (2023).10.1038/s41586-023-05819-w ↗
14. Chiang, C.-C., Lan, H.-Y., Pang, C.-S., Appenzeller, J. & Chen, Z. Air-Stable P-Doping in Record High-Performance Monolayer WSe2 Devices. IEEE Electron Device Lett. 43, 319–322 (2022).10.1109/LED.2021.3135312 ↗
15. Pang, C. et al. Atomically Controlled Tunable Doping in High‐Performance WSe2 Devices. Adv. Electron. Mater. 6, 1901304 (2020).10.1002/aelm.201901304 ↗
16. Wu, R. et al. Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre. Nat. Electron. 5, 497–504 (2022).10.1038/s41928-022-00800-3 ↗
17. Jung, Y. et al. Transferred via contacts as a platform for ideal two-dimensional transistors. Nat. Electron. 2, 187–194 (2019).10.1038/s41928-019-0245-y ↗
18. Lan, H.-Y., Appenzeller, J. & Chen, Z. Dielectric Interface Engineering for High-Performance Monolayer MoS2 Transistors via hBN Interfacial Layer and Ta Seeding. In 2022 International Electron Devices Meeting (IEDM) 7.7.1-7.7.4. https://doi.org/10.1109/IEDM45625.2022.10019439 (2022).10.1109/IEDM45625.2022.10019439 ↗
19. Illarionov, Y. Y. et al. Insulators for 2D nanoelectronics: the gap to bridge. Nat. Commun. 11, 3385 (2020).10.1038/s41467-020-16640-8 ↗
20. Das, S. et al. Transistors based on two-dimensional materials for future integrated circuits. Nat. Electron. 4, 786–799 (2021).10.1038/s41928-021-00670-1 ↗
21. Chiang, C.-C. et al. Design and Process Co-Optimization of 2-D Monolayer Transistors via Machine Learning. IEEE Trans. Electron Devices, 1–6, https://doi.org/10.1109/TED.2023.3310942 (2023).10.1109/TED.2023.3310942 ↗
22. Illarionov, Y. Y. et al. The role of charge trapping in MoS 2 /SiO 2 and MoS 2 /hBN field-effect transistors. 2D Mater. 3, 035004 (2016).10.1088/2053-1583/3/3/035004 ↗
23. Illarionov, Y. Y. et al. Energetic mapping of oxide traps in MoS 2 field-effect transistors. 2D Mater. 4, 025108 (2017).10.1088/2053-1583/aa734a ↗
24. Illarionov, Y. Y. et al. Improved Hysteresis and Reliability of MoS2Transistors With High-Quality CVD Growth and Al2O3Encapsulation. IEEE Electron Device Lett. 38, 1763–1766 (2017).10.1109/LED.2017.2768602 ↗
25. Knobloch, T. et al. Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning. Nat. Electron. https://doi.org/10.1038/s41928-022-00768-0 (2022).10.1038/s41928-022-00768-0 ↗
26. Illarionov, Y. Y. et al. Highly-stable black phosphorus field-effect transistors with low density of oxide traps. Npj 2D Mater. Appl. 1, 23 (2017).10.1038/s41699-017-0025-3 ↗
27. Alkauskas, A., Yan, Q. & Van De Walle, C. G. First-principles theory of nonradiative carrier capture via multiphonon emission. Phys. Rev. B 90, 075202 (2014).10.1103/PhysRevB.90.075202 ↗
28. Illarionov, Y. Y. et al. Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors. ACS Nano 10, 9543–9549 (2016).10.1021/acsnano.6b04814 ↗
29. Knobloch, T. et al. A Physical Model for the Hysteresis in MoS2 Transistors. IEEE J. Electron Devices Soc. 6, 972–978 (2018).10.1109/JEDS.2018.2829933 ↗
30. Stampfer, B. et al. Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors. ACS Nano 12, 5368–5375 (2018).10.1021/acsnano.8b00268 ↗
31. Chang, Y.-H., Yu, M.-J., Lin, R.-P., Hsu, C.-P. & Hou, T.-H. Abnormal positive bias stress instability of In–Ga–Zn–O thin-film transistors with low-temperature Al 2 O 3 gate dielectric. Appl. Phys. Lett. 108, 033502 (2016).10.1063/1.4939905 ↗
32. Chen, Y.-P. et al. Positive Bias Temperature Instability and Hot Carrier Degradation of Back-End-of-Line, nm-Thick, In2O3 Thin-Film Transistors. IEEE Electron Device Lett 43, 232–235 (2022).10.1109/LED.2021.3134902 ↗
33. Chasin, A. et al. Understanding and modelling the PBTI reliability of thin-film IGZO transistors. in 2021 IEEE International Electron Devices Meeting (IEDM) 31.1.1-31.1.4. https://doi.org/10.1109/IEDM19574.2021.9720666 (IEEE, 2021).10.1109/IEDM19574.2021.9720666 ↗
34. Kong, Q. et al. New Insights into the Impact of Hydrogen Evolution on the Reliability of IGZO FETs: Experiment and Modeling. in 2022 International Electron Devices Meeting (IEDM) 30.2.1-30.2.4. https://doi.org/10.1109/IEDM45625.2022.10019394 (IEEE, 2022).10.1109/IEDM45625.2022.10019394 ↗
35. Powell, M. J., van Berkel, C. & Hughes, J. R. Time and temperature dependence of instability mechanisms in amorphous silicon thin‐film transistors. Appl. Phys. Lett. 54, 1323–1325 (1989).10.1063/1.100704 ↗
36. Libsch, F. & Kanicki, J. Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors. Appl. Phys. Lett. 62, 1286–1288 (1993).10.1063/1.108709 ↗
37. Illarionov, Y. Y. et al. Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors. Npj 2D Mater. Appl 8, 8 (2024).10.1038/s41699-024-00445-0 ↗
38. Kaczer, B. et al. Ubiquitous relaxation in BTI stressing—New evaluation and insights. In 2008 IEEE International Reliability Physics Symposium 20–27. https://doi.org/10.1109/RELPHY.2008.4558858 (IEEE, 2008).10.1109/RELPHY.2008.4558858 ↗
39. Rzepa, G. et al. Comphy — A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. 85, 49–65 (2018).10.1016/j.microrel.2018.04.002 ↗
40. Waldhoer, D. et al. Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices. Microelectron. Reliab. 146, 115004 (2023).10.1016/j.microrel.2023.115004 ↗
41. Yang, G. et al. Anomalous Positive Bias Stress Instability in MoS2 Transistors With High-Hydrogen-Concentration SiO2 Gate Dielectrics. IEEE Electron Device Lett 40, 232–235 (2019).10.1109/LED.2018.2886423 ↗
42. Wang, R. et al. Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach. In 2021 IEEE International Electron Devices Meeting (IEDM) 31.2.1-31.2.4. https://doi.org/10.1109/IEDM19574.2021.9720674 (IEEE, 2021).10.1109/IEDM19574.2021.9720674 ↗
43. Sun, Z. et al. Investigation of the Off-State Degradation in Advanced FinFET Technology—Part I: Experiments and Analysis. IEEE Trans. Electron Devices 70, 914–920 (2023).10.1109/TED.2023.3239585 ↗
44. Sun, Z. et al. Investigation of the Off-State Degradation in Advanced FinFET Technology—Part II: Compact Aging Model and Impact on Circuits. IEEE Trans. Electron Devices 70, 921–927 (2023).10.1109/TED.2023.3239587 ↗
45. Liu, G. et al. Hydrogen-Related Instability of IGZO Field-Effect Transistors. IEEE Trans. Electron Devices, 1–7, https://doi.org/10.1109/TED.2024.3372486 (2024).10.1109/TED.2024.3372486 ↗
46. Shiah, Y.-S. et al. Mobility–stability trade-off in oxide thin-film transistors. Nat. Electron. 4, 800–807 (2021).10.1038/s41928-021-00671-0 ↗
47. Illarionov, Y. et al. Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences. IEEE Trans. Electron Devices 62, 3876–3881 (2015).10.1109/TED.2015.2480704 ↗
48. Kaviani, M., Afanas’ev, V. V. & Shluger, A. L. Interactions of hydrogen with amorphous hafnium oxide. Phys. Rev. B 95, 075117 (2017).10.1103/PhysRevB.95.075117 ↗
49. Shen, P.-C. et al. Healing of donor defect states in monolayer molybdenum disulfide using oxygen-incorporated chemical vapour deposition. Nat. Electron. https://doi.org/10.1038/s41928-021-00685-8 (2021).10.1038/s41928-021-00685-8 ↗
50. Zhao, Y. et al. Electrical spectroscopy of defect states and their hybridization in monolayer MoS2. Nat. Commun. 14, 44 (2023).10.1038/s41467-022-35651-1 ↗
51. Wan, Y. et al. Low-defect-density WS2 by hydroxide vapor phase deposition. Nat. Commun. 13, 4149 (2022).10.1038/s41467-022-31886-0 ↗