Monolayer MoS2 field-effect transistors patterned by photolithography for active matrix pixels in organic light-emitting diodes
Source abstract
Abstract
Abstract Two-dimensional molybdenum disulfide (MoS2) has substantial potential as a semiconducting material for devices. However, it is commonly prepared by mechanical exfoliation, which limits flake size to only a few micrometers, which is not sufficient for processes such as photolithography and circuit patterning. Chemical vapor deposition (CVD) has thus become a mainstream fabrication technique to achieve large-area MoS2. However, reports of conventional photolithographic patterning of large-area 2D MoS2-based devices with high mobilities and low switching voltages are rare. Here we fabricate CVD-grown large-area MoS2field-effect transistors (FETs) by photolithography and demonstrate their potential as switching and driving FETs for pixels in analog organic light-emitting diode (OLED) displays. We spin-coat an ultrathin hydrophobic polystyrene layer on an Al2O3dielectric, so that the uniformity of threshold voltage (Vth) of the FETs might be improved. Our MoS2FETs show a high linear mobility of approximately 10 cm2 V−1 s−1, due to a large grain size around 60 μm, and a high ON/OFF current ratio of 108. Dynamic switching of blue and green OLED pixels is shown at ~5 V, demonstrating their application potential.
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Research context
OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Advanced Sensor and Energy Harvesting Materials
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References (50)
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