Direct observation of ferroelectricity in two-dimensional MoS2
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Abstract
Abstract Recent theoretical predictions of ferroelectricity in two-dimensional (2D) van der Waals materials reveal exciting possibilities for their use in scalable low-power electronic devices with polarization-dependent functionalities. These prospects have been further invigorated by the experimental evidence of the polarization response in some transition metal chalcogenides (TMCs)—a group of narrow-band semiconductors and semimetals with a wealth of application potential. Among the TMCs, molybdenum disulfide (MoS2) is known as one of the most promising and robust 2D electronic materials. However, in spite of theoretical predictions, no ferroelectricity has been experimentally detected in MoS2, while the emergence of this property could enhance its potential for electronics applications. Here, we report the experimental observation of a stable room-temperature out-of-plane polarization ordering in 2D MoS2 layers, where polarization switching is realized by mechanical pressure induced by a tip of a scanning probe microscope. Using this approach, we create the bi-domain polarization states, which exhibit different piezoelectric activity, second harmonic generation, surface potential, and conductivity. Ferroelectric MoS2 belongs to the distorted trigonal structural 1T” phase, where a spontaneous polarization is inferred by its P3m1 space-group symmetry and corroborated by theoretical modeling. Experiments on the flipped flakes reveal that the 1T”-MoS2 samples consist of the monolayers with randomly alternating polarization orientation, which form stable but switchable “antipolar” head-to-head or tail-to-tail dipole configurations. Mechanically written domains are remarkably stable facilitating the application of 1T”-MoS2 in flexible memory and electromechanical devices.
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Research context
OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Advanced Sensor and Energy Harvesting Materials
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References (46)
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1. Wu, W. et al. Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics. Nature 514, 470–474 (2014).10.1038/nature13792 ↗
2. Shirodkar, S. N. & Waghmare, U. V. Emergence of ferroelectricity at a metal-semiconductor transition in a 1T monolayer of MoS2. Phys. Rev. Lett. 112, 157601 (2014).10.1103/PhysRevLett.112.157601 ↗
3. Fei, Z. et al. Ferroelectric switching of a two-dimensional metal. Nature 560, 336–339 (2018).10.1038/s41586-018-0336-3 ↗
4. Ding, W. et al. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials. Nat. Commun. 8, 14956 (2017).10.1038/ncomms14956 ↗
5. Yang, Q., Xiong, W., Zhu, L., Gao, G. & Wu, M. Chemically functionalized phosphorene: two-dimensional multiferroics with vertical polarization and mobile magnetism. J. Am. Chem. Soc. 139, 11506–11512 (2017).10.1021/jacs.7b04422 ↗
6. Wu, M., Burton, J. D., Tsymbal, E. Y., Zeng, X. C. & Jena, P. Hydroxyl-decorated graphene systems as candidates for organic metal-free ferroelectrics, multiferroics, and high-performance proton battery cathode materials. Phys. Rev. B 87, 081406(R) (2013).10.1103/PhysRevB.87.081406 ↗
7. Cui, C., Xue, F., Hu, W.-J. & Li, L.-J. Two-dimensional materials with piezoelectric and ferroelectric functionalities. NPJ 2D Mater. Appl. 2, 18 (2018).10.1038/s41699-018-0063-5 ↗
8. Zhou, Y. et al. Out-of-plane piezoelectricity and ferroelectricity in layered α-In2Se3 nanoflakes. Nano Lett. 17, 5508–5513 (2017).10.1021/acs.nanolett.7b02198 ↗
9. Zheng, C. et al. Room temperature in-plane ferroelectricity in van der Waals In2Se3. Sci. Adv. 4, eaar7720 (2018).10.1126/sciadv.aar7720 ↗
10. Chang, K. et al. Discovery of robust in-plane ferroelectricity in atomic-thick SnTe. Science 353, 274–278 (2016).10.1126/science.aad8609 ↗
11. Higashitarumizu, N. et al. Purely in-plane ferroelectricity in monolayer SnS at room temperature. Nat. Commun. 11, 2428 (2020).10.1038/s41467-020-16291-9 ↗
12. Sharma, P. et al. A room-temperature ferroelectric semimetal. Sci. Adv. 5, eaax5080 (2019).10.1126/sciadv.aax5080 ↗
13. Liu, F. et al. Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes. Nat. Commun. 7, 12357 (2016).10.1038/ncomms12357 ↗
14. You, L. et al. In-plane ferroelectricity in thin flakes of van der Waals hybrid perovskite. Adv. Mater. 30, 1803249 (2018).10.1002/adma.201803249 ↗
15. Cheng, R. et al. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics. Nat. Commun. 5, 5143 (2014).10.1038/ncomms6143 ↗
16. Lee, G.-H. et al. Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures. ACS Nano 7, 7931–7936 (2013).10.1021/nn402954e ↗
17. Feng, J. et al. Identification of single nucleotides in MoS2 nanopores. Nat. Nanotechnol. 10, 1070–1076 (2015).10.1038/nnano.2015.219 ↗
18. Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. V. & Kis, A. 2D transition metal dichalcogenides. Nat. Rev. Mater. 2, 17033 (2017).10.1038/natrevmats.2017.33 ↗
19. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).10.1103/PhysRevLett.105.136805 ↗
20. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011).10.1038/nnano.2010.279 ↗
21. Kappera, R. et al. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nat. Mater. 13, 1128 (2014).10.1038/nmat4080 ↗
22. Yu, Y. et al. High phase-purity 1T′-MoS2- and 1T′-MoSe2-layered crystals. Nat. Chem. 10, 638–643 (2018).10.1038/s41557-018-0035-6 ↗
23. Chou, S. S. et al. Understanding catalysis in a multiphasic two-dimensional transition metal dichalcogenide. Nat. Commun. 6, 8311 (2015).10.1038/ncomms9311 ↗
24. Guo, Y. et al. Probing the dynamics of the metallic-to-semiconducting structural phase transformation in MoS2 crystals. Nano Lett. 15, 5081–5088 (2015).10.1021/acs.nanolett.5b01196 ↗
25. Sharma, C. H., Surendran, A. P., Varghese, A. & Thalakulam, M. Stable and scalable 1T MoS2 with low temperature-coefficient of resistance. Sci. Rep. 8, 12463 (2018).10.1038/s41598-018-30867-y ↗
26. Liu, L. et al. Phase-selective synthesis of 1T′ MoS2 monolayers and heterophase bilayers. Nat. Mater. 17, 1108–1114 (2018).10.1038/s41563-018-0187-1 ↗
27. Guo, C. et al. Observation of superconductivity in 1T′-MoS2 nanosheets. J. Mater. Chem. C 5, 10855–10860 (2017).10.1039/C7TC03749J ↗
28. Yang, D., Sandoval, S. J., Divigalpitiya, W. M. R., Irwin, J. C. & Frindt, R. F. Structure of single-molecular-layer MoS2. Phys. Rev. B 43, 12053–12056 (1991).10.1103/PhysRevB.43.12053 ↗
29. Chrissafis, K. et al. Structural studies of MoS2 intercalated by lithium. Mater. Sci. Eng. B 3, 145–151 (1989).10.1016/0921-5107(89)90194-3 ↗
30. Zhao, H. J. et al. Meta-screening and permanence of polar distortion in metallized ferroelectrics. Phys. Rev. B 97, 054107 (2018).10.1103/PhysRevB.97.054107 ↗
31. Choi, J.-H. & Jhi, S.-H. Origin of robust out-of-plane ferroelectricity in d1T-MoS2 monolayer. J. Phys. Condens. Matter 32, 045702 (2020).10.1088/1361-648X/ab4c67 ↗
32. Gruverman, A., Alexe, M. & Meier, D. Piezoresponse force microscopy and nanoferroic phenomena. Nat. Commun. 10, 1661 (2019).10.1038/s41467-019-09650-8 ↗
33. Lu, H. et al. Mechanical writing of ferroelectric polarization. Science 336, 59–61 (2012).10.1126/science.1218693 ↗
34. Labuda, A. & Proksch, R. Quantitative measurements of electromechanical response with a combined optical beam and interferometric atomic force microscope. Appl. Phys. Lett. 106, 253103 (2015).10.1063/1.4922210 ↗
35. Očenášek, J. et al. Nanomechanics of flexoelectric switching. Phys. Rev. B 92, 035417 (2015).10.1103/PhysRevB.92.035417 ↗
36. Lu, H. et al. Nanodomain engineering in ferroelectric capacitors with graphene electrodes. Nano Lett. 16, 6460–6466 (2016).10.1021/acs.nanolett.6b02963 ↗
37. Xiao, J. et al. Intrinsic two-dimensional ferroelectricity with dipole locking. Phys. Rev. Lett. 120, 227601 (2018).10.1103/PhysRevLett.120.227601 ↗
38. Meier, Q. N. et al. Global formation of topological defects in the multiferroic hexagonal manganites. Phys. Rev. X 7, 041014 (2017).
39. Íñiguez, J. First-Principles Studies of Structural Domain Walls. in Domain Walls: From Fundamental Properties to Nanotechnology Concepts (eds D. Meier, J. Seidel, M. Gregg, & R. Ramesh) (Oxford University Press, 2020).10.1093/oso/9780198862499.003.0003 ↗
40. Klinger, M. More features, more tools, more CrysTBox. J. Appl. Crystallogr. 50, 1226–1234 (2017).10.1107/S1600576717006793 ↗
41. Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169–11186 (1996).10.1103/PhysRevB.54.11169 ↗
42. Kresse, G. & Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59, 1758–1775 (1999).10.1103/PhysRevB.59.1758 ↗
43. Perdew, J. P. et al. Restoring the density-gradient expansion for exchange in solids and surfaces. Phys. Rev. Lett. 100, 136406 (2008).10.1103/PhysRevLett.100.136406 ↗
44. Samadi, M. et al. Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives. Nanoscale Horiz. 3, 90–204 (2018).10.1039/C7NH00137A ↗
45. Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865–3868 (1996).10.1103/PhysRevLett.77.3865 ↗
46. Blochl, P. E. Projector augmented-wave method. Phys. Rev. B Condens. Matter 50, 17953–17979 (1994).10.1103/PhysRevB.50.17953 ↗