Bandgap engineering of two-dimensional semiconductor materials
Source abstract
Abstract
Abstract Semiconductors are the basis of many vital technologies such as electronics, computing, communications, optoelectronics, and sensing. Modern semiconductor technology can trace its origins to the invention of the point contact transistor in 1947. This demonstration paved the way for the development of discrete and integrated semiconductor devices and circuits that has helped to build a modern society where semiconductors are ubiquitous components of everyday life. A key property that determines the semiconductor electrical and optical properties is the bandgap. Beyond graphene, recently discovered two-dimensional (2D) materials possess semiconducting bandgaps ranging from the terahertz and mid-infrared in bilayer graphene and black phosphorus, visible in transition metal dichalcogenides, to the ultraviolet in hexagonal boron nitride. In particular, these 2D materials were demonstrated to exhibit highly tunable bandgaps, achieved via the control of layers number, heterostructuring, strain engineering, chemical doping, alloying, intercalation, substrate engineering, as well as an external electric field. We provide a review of the basic physical principles of these various techniques on the engineering of quasi-particle and optical bandgaps, their bandgap tunability, potentials and limitations in practical realization in future 2D device technologies.
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Research context
OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Ga2O3 and related materials
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References (100+)
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1. Kroemer, H. Nobel lecture: quasielectric fields and band offsets: teaching electrons new tricks. Rev. Mod. Phys. 73, 783–793 (2001).10.1103/RevModPhys.73.783 ↗
2. Esaki, L. & Tsu, R. Superlattice and negative differential conductivity in semiconductors. IBM J. Res. Dev. 14, 61–65 (1970).10.1147/rd.141.0061 ↗
3. Lee, M. L., Fitzgerald, E. A., Bulsara, M. T., Currie, M. T. & Lochtefeld, A. Strained si, sige, and ge channels for high-mobility metal-oxide-semiconductor field-effect transistors. J. Appl. Phys. 97, 011101 (2005).10.1063/1.1819976 ↗
4. Ning, C.-Z., Dou, L. & Yang, P. Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions. Nat. Rev. Mater. 2, 17070 (2017).10.1038/natrevmats.2017.70 ↗
5. Chu, M., Sun, Y., Aghoram, U. & Thompson, S. E. Strain: a solution for higher carrier mobility in nanoscale MOSFETs. Annu. Rev. Mater. Res. 39, 203–229 (2009).10.1146/annurev-matsci-082908-145312 ↗
6. Thijs, J., Tiemeijer, L. F., Kuindersma, P., Binsma, J. & Van Dongen, T. High-performance 1.5 μ m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers. IEEE J. Quantum Electron. 27, 1426–1439 (1991).10.1109/3.89960 ↗
7. Mimura, T., Hiyamizu, S., Fujii, T. & Nanbu, K. A new field-effect transistor with selectively doped GaAs/n-alx ga1−x as heterojunctions. Jpn. J. Appl. Phys. 19, L225–L227 (1980).10.1143/JJAP.19.L225 ↗
8. Kroemer, H. A proposed class of hetero-junction injection lasers. Proc. IEEE 51, 1782–1783 (1963).10.1109/PROC.1963.2706 ↗
9. Faist, J. et al. Quantum cascade laser. Science 264, 553–556 (1994).10.1126/science.264.5158.553 ↗
10. Chang, L. L. & Esaki, L. Semiconductor quantum heterostructures. Phys. Today 45, 36–43 (1992).10.1063/1.881342 ↗
11. Tsui, D. C., Stormer, H. L. & Gossard, A. C. Two-dimensional magnetotransport in the extreme quantum limit. Phys. Rev. Lett. 48, 1559–1562 (1982).10.1103/PhysRevLett.48.1559 ↗
12. Novoselov, K. S. et al. Two-dimensional atomic crystals. Proc. Natl Acad. Sci. USA 102, 10451–10453 (2005).10.1073/pnas.0502848102 ↗
13. Avouris, P., Heinz, T.F & Low, T. 2D Materials. (Cambridge University Press, 2017).10.1017/9781316681619 ↗
14. Geim, A. K. & Grigorieva, I. V. van der Waals heterostructures. Nature 499, 419 (2013).10.1038/nature12385 ↗
15. Novoselov, K. S., Mishchenko, A., Carvalho, A. & Castro Neto, A. H. 2D materials and van der Waals heterostructures. Science 353, aac9439 (2016).10.1126/science.aac9439 ↗
16. Redaelli, L. et al. Effect of the quantum well thickness on the performance of ingan photovoltaic cells. Appl. Phys. Lett. 105, 131105 (2014).10.1063/1.4896679 ↗
17. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699 (2012).10.1038/nnano.2012.193 ↗
18. Wang, G. et al. Colloquium: excitons in atomically thin transition metal dichalcogenides. Rev. Mod. Phys. 90, 021001 (2018).10.1103/RevModPhys.90.021001 ↗
19. Kappera, R. et al. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nat. Mater. 13, 1128 (2014).10.1038/nmat4080 ↗
20. Fei, Z. et al. Edge conduction in monolayer WTe2. Nat. Phys. 13, 677 (2017).10.1038/nphys4091 ↗
21. Island, J. O. et al. Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors. Adv. Opt. Mater. 2, 641–645 (2014).10.1002/adom.201400043 ↗
22. Lei, S. et al. Synthesis and photoresponse of large gase atomic layers. Nano Lett. 13, 2777–2781 (2013).10.1021/nl4010089 ↗
23. Li, L. et al. Single-layer single-crystalline SnSe nanosheets. J. Am. Chem. Soc. 135, 1213–1216 (2013).10.1021/ja3108017 ↗
24. Huang, Y. & Sutter, P., SnS2: an emerging layered metal dichalcogenide semiconductor. APS March Meeting Abstracts (2015).
25. Anasori, B., Lukatskaya, M. R. & Gogotsi, Y. 2D metal carbides and nitrides (MXenes) for energy storage. Nat. Rev. Mater. 2, 16098 (2017).10.1038/natrevmats.2016.98 ↗
26. AlBalushi, Z. Y. et al. Two-dimensional gallium nitride realized via graphene encapsulation. Nat. Mater. 15, 1166 (2016).10.1038/nmat4742 ↗
27. Dean, C. R. et al. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 5, 722 (2010).10.1038/nnano.2010.172 ↗
28. Ma, W. et al. In-plane anisotropic and ultra-low-loss polaritons in a natural van der Waals crystal. Nature 562, 557 (2018).10.1038/s41586-018-0618-9 ↗
29. Lodesani, A. et al. Graphene as an Ideal Buffer Layer for the Growth of High-Quality Ultrathin Cr2 O3 Layers on Ni (111). ACS Nano 13, 4361–4367 (2019).10.1021/acsnano.8b09588 ↗
30. Lui, C. H., Liu, L., Mak, K. F., Flynn, G. W. & Heinz, T. F. Ultraflat graphene. Nature 462, 339 (2009).10.1038/nature08569 ↗
31. Hodes, G. Perovskite-based solar cells. Science 342, 317–318 (2013).10.1126/science.1245473 ↗
32. Liu, M., Johnston, M. B. & Snaith, H. J. Efficient planar heterojunction perovskite solar cells by vapour deposition. Nature 501, 395 (2013).10.1038/nature12509 ↗
33. Fu, L. & Kane, C. L. Superconducting proximity effect and majorana fermions at the surface of a topological insulator. Phys. Rev. Lett. 100, 096407 (2008).10.1103/PhysRevLett.100.096407 ↗
34. Huang, B. et al. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit. Nature 546, 270 (2017).10.1038/nature22391 ↗
35. Gong, C. et al. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals. Nature 546, 265 (2017).10.1038/nature22060 ↗
36. Ding, W. et al. Prediction of intrinsic two-dimensional ferroelectrics in In2 Se3 and other III2 -VI3 van der Waals materials. Nat. Commun. 8, 14956 (2017).10.1038/ncomms14956 ↗
37. Liu, H. et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033–4041 (2014).10.1021/nn501226z ↗
38. Vogt, P. et al. Silicene: compelling experimental evidence for graphenelike two-dimensional silicon. Phys. Rev. Lett. 108, 155501 (2012).10.1103/PhysRevLett.108.155501 ↗
39. Li, L. et al. Buckled germanene formation on pt (111). Adv. Mater. 26, 4820–4824 (2014).10.1002/adma.201400909 ↗
40. Zhu, Z. et al. Multivalency-driven formation of te-based monolayer materials: a combined first-principles and experimental study. Phys. Rev. Lett. 119, 106101 (2017).10.1103/PhysRevLett.119.106101 ↗
41. Kochat, V. et al. Atomically thin gallium layers from solid-melt exfoliation. Sci. Adv. 4, e1701373 (2018).10.1126/sciadv.1701373 ↗
42. Ji, J. et al. Two-dimensional antimonene single crystals grown by van der Waals epitaxy. Nat. Commun. 7, 13352 (2016).10.1038/ncomms13352 ↗
43. Wu, R. et al. Large-area single-crystal sheets of borophene on cu (111) surfaces. Nat. Nanotechnol. 14, 44 (2019).10.1038/s41565-018-0317-6 ↗
44. Li, L. et al. Direct observation of the layer-dependent electronic structure in phosphorene. Nat. Nanotechnol. 12, 21 (2017).10.1038/nnano.2016.171 ↗
45. Zhang, G. et al. Determination of layer-dependent exciton binding energies in few-layer black phosphorus. Sci. Adv. 4, eaap9977 (2018).10.1126/sciadv.aap9977 ↗
46. Zhang, G. et al. Infrared fingerprints of few-layer black phosphorus. Nat. Commun. 8, 14071 (2017).10.1038/ncomms14071 ↗
47. Low, T. et al. Tunable optical properties of multilayer black phosphorus thin films. Phys. Rev. B 90, 075434 (2014).10.1103/PhysRevB.90.075434 ↗
48. de Sousa, D. J. P., de Castro, L. V., daCosta, D. R., Pereira, J. M. & Low, T. Multilayered black phosphorus: From a tight-binding to a continuum description. Phys. Rev. B 96, 155427 (2017).10.1103/PhysRevB.96.155427 ↗
49. Rudenko, A. N. & Katsnelson, M. I. Quasiparticle band structure and tight-binding model for single-and bilayer black phosphorus. Phys. Rev. B 89, 201408 (2014).10.1103/PhysRevB.89.201408 ↗
50. He, J., Hummer, K. & Franchini, C. Stacking effects on the electronic and optical properties of bilayer transition metal dichalcogenides MoS2, MoSe2, WS2, and WSe2. Phys. Rev. B 89, 075409 (2014).10.1103/PhysRevB.89.075409 ↗
51. Li, Y. et al. Probing symmetry properties of few-layer MoS2 and h-bn by optical second-harmonic generation. Nano Lett. 13, 3329–3333 (2013).10.1021/nl401561r ↗
52. Xi, X. et al. Ising pairing in superconducting NbSe2 atomic layers. Nat. Phys. 12, 139 (2016).10.1038/nphys3538 ↗
53. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).10.1103/PhysRevLett.105.136805 ↗
54. Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271–1275 (2010).10.1021/nl903868w ↗
55. Arora, A., Nogajewski, K., Molas, M., Koperski, M. & Potemski, M. Exciton band structure in layered MoSe2: from a monolayer to the bulk limit. Nanoscale 7, 20769–20775 (2015).10.1039/C5NR06782K ↗
56. Molas, M. R. et al. The optical response of monolayer, few-layer and bulk tungsten disulfide. Nanoscale 9, 13128–13141 (2017).10.1039/C7NR04672C ↗
57. Zhao, W. et al. Evolution of electronic structure in atomically thin sheets of WS2 and WSe2. ACS Nano 7, 791–797 (2013).10.1021/nn305275h ↗
58. Tongay, S. et al. Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling. Nat. Commun. 5, 3252 (2014).10.1038/ncomms4252 ↗
59. Jariwala, B. et al. Synthesis and characterization of ReS2 and ReSe2 layered chalcogenide single crystals. Chem. Mater. 28, 3352–3359 (2016).10.1021/acs.chemmater.6b00364 ↗
60. Zhang, G. et al. Optical and electrical properties of two-dimensional palladium diselenide. Appl. Phys. Lett. 114, 253102 (2019).10.1063/1.5097825 ↗
61. Yu, X. et al. Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor. Nat. Commun. 9, 1545 (2018).10.1038/s41467-018-03935-0 ↗
62. Özçelik, V. O., Azadani, J. G., Yang, C., Koester, S. J. & Low, T. Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching. Phys. Rev. B 94, 035125 (2016).10.1103/PhysRevB.94.035125 ↗
63. Bellus, M. Z. et al. type-I van der Waals heterostructure formed by MoS2 and ReS2 monolayers. Nanoscale Horiz. 2, 31–36 (2017).10.1039/C6NH00144K ↗
64. Nakamura, S., Senoh, M., Iwasa, N. & Nagahama, S.-I. High-brightness ingan blue, green and yellow light-emitting diodes with quantum well structures. Jpn. J. Appl. Phys. 34, L797 (1995).10.1143/JJAP.34.L797 ↗
65. Hong, X. et al. Ultrafast charge transfer in atomically thin MoS2 /WS2 heterostructures. Nat. Nanotechnol. 9, 682 (2014).10.1038/nnano.2014.167 ↗
66. Bernardi, M., Palummo, M. & Grossman, J. C. Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials. Nano Lett. 13, 3664–3670 (2013).10.1021/nl401544y ↗
67. Cheng, R. et al. High-performance, multifunctional devices based on asymmetric van der Waals heterostructures. Nat. Electron. 1, 356 (2018).10.1038/s41928-018-0086-0 ↗
68. Li, M. O., Esseni, D., Nahas, J. J., Jena, D. & Xing, H. G. Two-dimensional heterojunction interlayer tunneling field effect transistors (thin-TFETs). IEEE J. Electron Devices Soc. 3, 200–207 (2015).10.1109/JEDS.2015.2390643 ↗
69. Rivera, P. et al. Observation of long-lived interlayer excitons in monolayer MoSe2 -WSe2 heterostructures. Nat. Commun. 6, 6242 (2015).10.1038/ncomms7242 ↗
70. Rivera, P. et al. Interlayer valley excitons in heterobilayers of transition metal dichalcogenides. Nat. Nanotechnol. 13, 1004–1015 (2018).10.1038/s41565-018-0193-0 ↗
71. Chaves, A., Azadani, J. G., Özçelik, V. O., Grassi, R. & Low, T. Electrical control of excitons in van der Waals heterostructures with type-II band alignment. Phys. Rev. B 98, 121302 (2018).10.1103/PhysRevB.98.121302 ↗
72. Chaves, A. J., Ribeiro, R. M., Frederico, T. & Peres, N. M. R. Excitonic effects in the optical properties of 2d materials:an equation of motion approach. 2D Mater. 4, 025086 (2017).10.1088/2053-1583/aa6b72 ↗
73. Nayak, K. et al. Probing evolution of twist-angle-dependent interlayer excitons in MoSe2 /WSe2 van der Waals heterostructures. ACS Nano 11, 4041–4050 (2017).10.1021/acsnano.7b00640 ↗
74. Yu, Y. et al. Equally efficient interlayer exciton relaxation and improved absorption in epitaxial and nonepitaxial MoS2 /WS2 heterostructures. Nano Lett. 15, 486–491 (2015).10.1021/nl5038177 ↗
75. Hanbicki, A. T. et al. Double indirect interlayer exciton in a MoSe2 /WSe2 van der Waals heterostructure. ACS Nano 12, 4719–4726 (2018).10.1021/acsnano.8b01369 ↗
76. Ciarrocchi, A. et al. Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures. Nat. Photonics 13, 131 (2019).10.1038/s41566-018-0325-y ↗
77. Miller, B. et al. Long-lived direct and indirect interlayer excitons in van der Waals heterostructures. Nano Lett. 17, 5229–5237 (2017).10.1021/acs.nanolett.7b01304 ↗
78. Kunstmann, J. et al. Momentum-space indirect interlayer excitons in transition-metal dichalcogenide van der Waals heterostructures. Nat. Phys. 14, 801 (2018).10.1038/s41567-018-0123-y ↗
79. Zhang, N. et al. A. Castellanos-Gomez and Plochocka, Moiré intralayer excitons in a MoSe2/MoS2 heterostructure. Nano Lett. 18, 7651–7657 (2018).10.1021/acs.nanolett.8b03266 ↗
80. Mouri, S. et al. Thermal dissociation of inter-layer excitons in MoS2/MoSe2 hetero-bilayers. Nanoscale 9, 6674–6679 (2017).10.1039/C7NR01598D ↗
81. Fang, H. et al. Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides. Proc. Natl. Acad. Sci. USA 111, 6198–6202 (2014).10.1073/pnas.1405435111 ↗
82. Seyler, K. L. et al. Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers. Nature 567, 66 (2019).10.1038/s41586-019-0957-1 ↗
83. Nagler, G. et al. Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure. 2D Mater. 4, 025112 (2017).10.1088/2053-1583/aa7352 ↗
84. Calman, E. et al. Indirect excitons in van der Waals heterostructures at room temperature. Nat. Commun. 9, 1895 (2018).10.1038/s41467-018-04293-7 ↗
85. Kozawa, D. et al. Evidence for fast interlayer energy transfer in MoSe2 /WS2 heterostructures. Nano Lett. 16, 4087–4093 (2016).10.1021/acs.nanolett.6b00801 ↗
86. Ceballos, F., Bellus, M. Z., Chiu, H.-Y. & Zhao, H. Probing charge transfer excitons in a MoSe2-WS2 van der Waals heterostructure. Nanoscale 7, 17523–17528 (2015).10.1039/C5NR04723D ↗
87. Bellus, M. Z., Ceballos, F., Chiu, H.-Y. & Zhao, H. Tightly bound trions in transition metal dichalcogenide heterostructures. ACS Nano 9, 6459–6464 (2015).10.1021/acsnano.5b02144 ↗
88. Thygesen, K. S. Calculating excitons, plasmons, and quasiparticles in 2D materials and van der Waals heterostructures. 2D Mater. 4, 022004 (2017).10.1088/2053-1583/aa6432 ↗
89. Cavalcante, L., Chaves, A., Van Duppen, B., Peeters, F. & Reichman, D. Electrostatics of electron-hole interactions in van der Waals heterostructures. Phys. Rev. B 97, 125427 (2018).10.1103/PhysRevB.97.125427 ↗
90. Gao, S., Yang, L. & Spataru, C. D. Interlayer coupling and gate-tunable excitons in transition metal dichalcogenide heterostructures. Nano Lett. 17, 7809–7813 (2017).10.1021/acs.nanolett.7b04021 ↗
91. Huang, Z. et al. Robust room temperature valley hall effect of interlayer excitons. Nano Lett. 20, 1345–1351 (2019).10.1021/acs.nanolett.9b04836 ↗
92. Binder, J. et al. Upconverted electroluminescence via auger scattering of interlayer excitons in van der Waals heterostructures. Nat. Commun. 10, 2335 (2019).10.1038/s41467-019-10323-9 ↗
93. Özçelik, V. O., Fathi, M., Azadani, J. G. & Low, T. Tin monochalcogenide heterostructures as mechanically rigid infrared band gap semiconductors. Phys. Rev. Mater. 2, 051003 (2018).10.1103/PhysRevMaterials.2.051003 ↗
94. Tian, Z., Guo, C., Zhao, M., Li, R. & Xue, J. Two-dimensional SnS: a phosphorene analogue with strong in-plane electronic anisotropy. ACS Nano 11, 2219–2226 (2017).10.1021/acsnano.6b08704 ↗
95. Huang, L., Wu, F. & Li, J. Structural anisotropy results in strain-tunable electronic and optical properties in monolayer gex and snx (x= s, se, te). J. Chem. Phys. 144, 114708 (2016).10.1063/1.4943969 ↗
96. Sa, B., Sun, Z. & Wu, B. The development of two dimensional group iv chalcogenides, blocks for van der Waals heterostructures. Nanoscale 8, 1169–1178 (2016).10.1039/C5NR06871A ↗
97. Brent, J. R. et al. Tin (ii) sulfide (SnS) nanosheets by liquid-phase exfoliation of herzenbergite: Iv-vi main group two-dimensional atomic crystals. J. Am. Chem. Soc. 137, 12689–12696 (2015).10.1021/jacs.5b08236 ↗
98. Patel, M., Kim, J. & Kim, Y. K. Growth of large-area SnS films with oriented 2D SnS layers for energy-efficient broadband optoelectronics. Adv. Funct. Mater. 28, 1804737 (2018).10.1002/adfm.201804737 ↗
99. Sun, H., Wang, Z. & Wang, Y. Band alignment of two-dimensional metal monochalcogenides MXs (M=Ga,In; X=S,Se,Te). AIP Adv. 7, 095120 (2017).10.1063/1.4986385 ↗
100. McDonnell, S., Addou, R., Buie, C., Wallace, R. M. & Hinkle, C. L. Defect-dominated doping and contact resistance in MoS2. ACS Nano 8, 2880–2888 (2014).10.1021/nn500044q ↗