Retention framework for analysing trapping dynamics in solution-processed metal-oxide semiconductors
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Abstract
Abstract The recovery lifetime postponement mechanism in solution-processed (SP) indium zinc oxide (IZO) thin-film transistors (TFTs) is analytically formulated under thermal and photo-annealing conditions. A quantitative density of states (DOS) model is employed to analyse charge transport dynamics and the impact of In molarity ratios on the retention lifetime and electrical stability. The photo-retention characteristics of IZO TFTs were examined during photo-annealing, showing that higher In molarity concentrations extend the retention lifetime. To quantify this behaviour, a recovery lifetime estimation method based on post-annealing and DOS distributions is proposed. A DOS–energy diagram describing the charge transition mechanism and its relationship with the atomic structure of SP IZO semiconductors is developed. A trade-off between the prolonged retention lifetime and recovery capability with increasing In molarity is noted. This work provides a detailed framework for understanding retention lifetime dynamics, stability, and performance of SP IZO TFTs, offering insights for their widespread application in sensor devices.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Ga2O3 and related materials · CCD and CMOS Imaging Sensors
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References (52)
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1. Yuvaraja, S. et al. Three-dimensional integrated metal-oxide transistors. Nat. Electron. 7, 768–776 (2024).10.1038/s41928-024-01205-0 ↗
2. Tseng, R. et al. Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors. Nat. Commun. 14, 5243 (2023).10.1038/s41467-023-41041-y ↗
3. Oh, H. et al. High-density integration of stretchable inorganic thin-film transistors with excellent performance and reliability. Nat. Commun. 13, 4963 (2022).10.1038/s41467-022-32672-8 ↗
4. Kim, G.-B., Choi, C. H., Hur, J. S., Ahn, J. & Jeong, J. K. Advances in n-type crystalline oxide channel layers for thin-film transistors: Materials, fabrication techniques, and device performance. J. Phys. D. Appl. Phys. 58, 013001 (2025).10.1088/1361-6463/ad7ec9 ↗
5. Xu, W., Li, H., Xu, J.-B. & Wang, L. Recent advances of solution-processed metal oxide thin-film transistors. ACS Appl. Mater. Interfaces 10, 25878–25901 (2018).10.1021/acsami.7b16010 ↗
6. He, P. et al. Enhanced NBIS stability of oxide thin-film transistors by using terbium-incorporated alumina. IEEE Electron Device Lett. 45, 1594–1597 (2024).10.1109/LED.2024.3422072 ↗
7. Shiah, Y.-S. et al. Mobility–stability trade-off in oxide thin-film transistors. Nat. Electron. 4, 800–807 (2021).10.1038/s41928-021-00671-0 ↗
8. Avis, C., Billah, M. M. & Jang, J. Light effect on amorphous tin oxide thin-film transistors. J. Electron. Mater. 5, 2300215 (2024).
9. Lan, L. et al. The effect of the charge transfer transition of the tetravalent terbium on the photostability of oxide thin-film transistors. Adv. Electron. Mater. 8, 2200170 (2022).10.1002/aelm.202200187 ↗
10. Chen, C., Abe, K., Kumomi, H. & Kanicki, J. Density of states of a-InGaZnO from temperature-dependent field-effect studies. IEEE Trans. Electron Dev. 56, 1177–1183 (2009).10.1109/TED.2009.2019157 ↗
11. Horowitz, G., Hajlaoui, R. & Delannoy, P. Temperature dependence of the field-effect mobility of sexithiophene. Determination of the density of traps. J. Phys. III Fr. 5, 355–371 (1995).
12. Lee, S. et al. Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin-film transistors. Appl. Phys. Lett. 98, 203508 (2011).10.1063/1.3589371 ↗
13. Kim, S., Ha, T. J., Sonar, P. & Dodabalapur, A. Charge transport in deep and shallow states in a high-mobility polymer FET. IEEE Trans. Electron Devices 63, 1254–1259 (2016).10.1109/TED.2016.2521663 ↗
14. Wang, S. et al. Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures. J. Appl. Phys. 123, 161503 (2018).10.1063/1.4990412 ↗
15. Arulkumar, S., Parthiban, S. & Kwon, J. Y. The influence of post-annealing temperature on indium-silicon oxide thin-film transistors. Mater. Sci. Semicond. Process. 145, 106665 (2022).10.1016/j.mssp.2022.106665 ↗
16. Jeong, H.-S., Cha, H. S., Hwang, S. H. & Kwon, H.-I. Effects of annealing atmosphere on electrical performance and stability of high-mobility indium-gallium-tin oxide thin-film transistors. Electronics 9, 1875 (2020).10.3390/electronics9111875 ↗
17. Zhou, X. et al. The effects of post-annealing process on the electrical performance and stability of Al-Zn-O thin-film transistors. IEEE Electron Device Lett. 41, 569–572 (2020).10.1109/LED.2020.2977377 ↗
18. Wei, Y. et al. Enhanced thermal stability of elevated-metal metal-oxide thin-film transistors via low-temperature nitrogen post-annealing. IEEE Trans. Electron Devices 68, 1649–1653 (2021).10.1109/TED.2021.3056635 ↗
19. Huang, C.-S., et al Improving the thermal stability of indium oxide n-type field-effect transistors by enhancing crystallinity through ultrahigh-temperature rapid thermal annealing. ACS Appl. Mater. Interfaces (ahead of print) (2025).10.1021/acsami.4c18435 ↗
20. Chang, Y.-C. et al. Breaking the trade-off between mobility and on–off ratio in oxide transistors. Adv. Mater. 37, 2413212 (2025).10.1002/adma.202413212 ↗
21. Zhang, Y. et al. Enhancement of InSe field-effect-transistor performance against degradation of InSe film in air environment. Nanomaterials 11, 3311 (2021).10.3390/nano11123311 ↗
22. Mativenga, M., Haque, F., Billah, M. M. & Um, J. G. Origin of light instability in amorphous IGZO thin-film transistors and its suppression. Sci. Rep. 11, 14618 (2021).10.1038/s41598-021-94078-8 ↗
23. Takeda, Y., Takahashi, T., Miyanaga, R., Bermundo, J. P. S. & Uraoka, Y. Degradation due to photo-induced electron in top-gate In-Ga-Zn-O thin-film transistors with n⁻ region under negative bias stress and light irradiation. IEEE Electron Device Lett. 44, 765–768 (2023).10.1109/LED.2023.3258960 ↗
24. Liu, J. et al. High mobility and photo-bias stable metal oxide thin-film transistors engineered by gradient doping. Adv. Electron. Mater. 8, 2200190 (2022).10.1002/aelm.202100984 ↗
25. Kim, Y. & Kim, C. Enhancement of electrical stability of metal oxide thin-film transistors against various stresses. J. Mater. Chem. C. 11, 7121 (2023).10.1039/D3TC00417A ↗
26. He, P. et al. The effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors. Commun. Mater. 2, 86 (2021).10.1038/s43246-021-00193-4 ↗
27. Jang, J. T. et al. Cation composition-dependent device performance and positive bias instability of self-aligned oxide semiconductor thin-film transistors: Including oxygen and hydrogen effect. ACS Appl. Mater. Interfaces 14, 1389–1396 (2022).10.1021/acsami.1c18890 ↗
28. Lee, J. et al. Enhancement of the electrical performance and bias stability of RF-sputtered indium tin zinc oxide thin-film transistors with vertical stoichiometric oxygen control. ACS Appl. Electron. Mater. 4, 1368–2108 (2022).10.1021/acsaelm.2c00054 ↗
29. Lan, L. et al. The mechanism of the photostability enhancement of thin-film transistors based on solution-processed oxide semiconductors doped with tetravalent lanthanides. Nanomaterials 12, 3902 (2022).10.3390/nano12213902 ↗
30. Wang, S. et al. An organic electrochemical transistor for multi-modal sensing, memory, and processing. Nat. Electron. 6, 281–291 (2023).10.1038/s41928-023-00950-y ↗
31. Robertson, J. & Guo, Y. Light induced instability mechanism in amorphous InGaZn oxide semiconductors. Appl. Phys. Lett. 104, 162102 (2014).10.1063/1.4872227 ↗
32. Lin, Y.-C., Yang, W.-C., Chiang, Y.-C. & Chen, W.-C. Recent advances in organic phototransistors: Nonvolatile memory, artificial synapses, and photodetectors. Small Sci. 2, 2200042 (2022).10.1002/smsc.202100109 ↗
33. Wei, Z.-Y., Prakoso, S. P., Li, Y.-T. & Chiu, Y.-C. Tunneling-effect-boosted interfacial charge trapping toward photo-organic transistor memory. Adv. Electron. Mater. 8, 2200197 (2022).10.1002/aelm.202101349 ↗
34. Zheng, L. et al. Long-memory retention and self-powered ultraviolet artificial synapses realized by multi-cation metal oxide semiconductors. J. Mater. Chem. C. 11, 7098 (2023).10.1039/D3TC01026K ↗
35. Jin, R., Shi, K., Qiu, B. & Huang, S. Photoinduced-reset and multilevel storage transistor memories based on antimony-doped tin oxide nanoparticles floating gate. Nanotechnology 33, 025201 (2022).10.1088/1361-6528/ac2dc5 ↗
36. Kang, Y. et al. Effects of crystalline structure of IGZO thin films on the electrical and photo-stability of metal-oxide thin-film transistors. Mater. Res. Bull. 139, 111252 (2021).10.1016/j.materresbull.2021.111252 ↗
37. Gu, Z.-Y. et al. Zinc oxide thin-film transistor with high UV photoelectric sensitivity for artificial neuro networks. J. Sci. Adv. Mater. Devices 9, 100689 (2024).10.1016/j.jsamd.2024.100689 ↗
38. Chen, Z., Sheleg, G., Shekhar, H. & Tessler, N. Structure–property relation in organic–metal oxide hybrid phototransistors. ACS Appl. Mater. Interfaces 12, 15430–15438 (2020).10.1021/acsami.9b22165 ↗
39. Wei, Y.-F., Zhang, T., Wu, J.-J., Li, T.-J. & Lin, D. Mobility enhancement of tin oxide thin-film transistor by indium-doping. Vacuum 221, 112868 (2024).10.1016/j.vacuum.2023.112868 ↗
40. Tarsoly, G., Lee, J.-Y., Heo, K.-J. & Kim, S.-J. Doping of indium oxide semiconductor film prepared using an environmentally friendly aqueous solution process with sub-1% molybdenum to improve device performance and stability. ACS Appl. Electron. Mater. 5, 4002–4689 (2023).10.1021/acsaelm.3c00579 ↗
41. Li, W. et al. High bias stability of Hf-doping-modulated indium oxide thin-film transistors. Microelectron. Eng. 286, 112142 (2024).10.1016/j.mee.2024.112142 ↗
42. Na, J.-H. et al. Dependence of positive bias stress instability on threshold voltage and its origin in solution-processed aluminum-doped indium oxide thin-film transistors. Nanomaterials 14, 466 (2024).10.3390/nano14050466 ↗
43. Kim, Y., Kim, M.-G. & Kim, C. Enhancing radiation-resistance of amorphous indium–zinc-oxide thin-film transistors by group IV transition element doping. J. Mater. Chem. C. 11, 10324 (2023).10.1039/D3TC01874A ↗
44. He, F. et al. Aqueous solution derived amorphous indium-doped gallium oxide thin-film transistors. IEEE J. Electron Devices Soc. 9, 373–377 (2021).10.1109/JEDS.2021.3066490 ↗
45. Kim, D. et al. Analyzing acceptor-like state distribution of solution-processed indium-zinc-oxide semiconductor depending on the In concentration. Nanomaterials 13, 2165 (2023).10.3390/nano13152165 ↗
46. Kim, D. et al. Investigation of donor-like state distributions in solution-processed IZO thin-film transistors through photocurrent analysis. Nanomaterials 13, 2986 (2023).10.3390/nano13232986 ↗
47. Colalongo, L. A new analytical model for amorphous-silicon thin-film transistors including tail and deep states. Solid-State Electron 45, 1525–1530 (2001).10.1016/S0038-1101(01)00183-6 ↗
48. Shaw, J. G. & Hack, M. An analytical model for calculating trapped charge in amorphous silicon. J. Appl. Phys. 64, 4562–4566 (1988).10.1063/1.341258 ↗
49. Shur, M., Hack, M. & Shaw, J. G. A new analytical model for amorphous silicon thin film transistors. J. Appl. Phys. 66, 3371–3380 (1989).10.1063/1.344481 ↗
50. Buchholz, D. B. et al. The structure and properties of amorphous indium oxide. Chem. Mater. 26, 5401–5411 (2014).10.1021/cm502689x ↗
51. Cochran, E. A., Page, C. J., Woods, K. N., Johnson, D. W. & Boettcher, S. W. Unique chemistries of metal-nitrate precursors to form metal-oxide thin films from solution: materials for electronic and energy applications. J. Mater. Chem. A 7, 24124 (2019).10.1039/C9TA07727H ↗
52. Lee, M., Kim, M., Jo, J.-W., Park, S. K. & Kim, Y.-H. Suppression of persistent photo-conductance in solution-processed amorphous oxide thin-film transistors. Appl. Phys. Lett. 112, 052103 (2018).10.1063/1.4999934 ↗