Design of ohmic contacts between Janus MoSSe and two-dimensional metals
Source abstract
Abstract
Abstract Two-dimensional semiconductors are considered as channel materials for field-effect transistors to overcome short-channel effects and reduce the device size. As the contacts to the metallic electrodes are decisive for the device performance, we study the electronic properties of contacts between Janus MoSSe and various two-dimensional metals. We demonstrate that weak interactions at these van der Waals contacts suppress Fermi level pinning and show that ohmic contacts can be formed for both terminations of Janus MoSSe, generating favorable transport characteristics.
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Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Electronic and Structural Properties of Oxides
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References (44)
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