Experimental realization of strain-induced room-temperature ferroelectricity in SrMnO3 films via selective oxygen annealing
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Abstract
Abstract Antiferromagnetic-paraelectric SrMnO3 (SMO) has aroused interest because of the theoretical strong coupling between the ferroelectric and ferromagnetic states with increasing epitaxial strain. In strained SMO films, the <110> polarized state and polar distortions have been observed, although high leakage currents and air degradation have limited their experimental verification. We herein provide a conclusive demonstration of room-temperature ferroelectricity and a high dielectric constant (εr = 138.1) in tensile-strained SMO by securing samples with insulating properties and clean surfaces using selective oxygen annealing. Furthermore, a paraelectricity and low dielectric constant (εr = 6.7) in the strain-relaxed SMO film have been identified as properties of the bulk SMO, which directly proves that the ferroelectricity of the tensile-strained SMO film is due to strain-induced polarization. We believe that these findings not only provide a cornerstone for exploring the physical properties of multiferroic SMO but also inspire new directions for single-phase multiferroics.
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Research context
OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Magnetic and transport properties of perovskites and related materials
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References (46)
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