Multifunctional molybdenum disulfide flash memory using a PEDOT:PSS floating gate

Abstract Two-dimensional transition metal dichalcogenide materials (TMDs), such as molybdenum disulfide (MoS₂), have been considered promising candidates for future electronic applications owing to their electrical, mechanical, and optical properties. Here, we present a new concept for multifunctional MoS₂ flash memory by combining a MoS₂ channel with a PEDOT:PSS floating layer. The proposed MoS₂ memory devices exhibit a switching ratio as high as 2.3 × 10⁷, a large memory window (54.6 ± 7.80 V), and high endurance (>1,000 cycles). As the PEDOT:PSS film enables a low-temperature solution-coating process and mechanical flexibility, the proposed P-memory can be embedded on a polyimide substrate over a rigid silicon substrate, offering high mechanical endurance (over 1,000 cycle bending test). Furthermore, both MoS₂ and PEDOT:PSS have a bandgap that is desirable in optoelectronic memory operation, where charge carriers are stored differently in the floating gate depending on light illumination. As a new application that combines photodiodes and memory functions, we demonstrate multilevel memory programming based on light intensity and color.