Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN
Source abstract
Abstract
Heteroepitaxy of semiconductors on two-dimensional (2-d) atomic layered materials enables the use of flexible and transferable inorganic electronic and optoelectronic devices in various applications. Herein, we report the shape-and morphology-controlled van der Waals (vdW) epitaxy of ZnO nanostructures on hexagonal boron nitride (hBN) insulating layers for an architectured semiconductor integration on the 2-d layered materials. The vdW surface feature of the 2-d nanomaterials, because of the surface free of dangling bonds, typically results in low-density random nucleation-growth in the vdW epitaxy. The difficulty in controlling the nucleation sites was resolved by artificially formed atomic ledges prepared on hBN substrates, which promoted the preferential vdW nucleation-growth of ZnO specifically along the designed ledges. Electron microscopy revealed crystallographically domain-aligned incommensurate vdW heteroepitaxial relationships, even though ZnO/hBN is highly latticemismatched. First-principles theoretical calculations confirmed the weakly bound, noncovalent binding feature of the ZnO/hBN heterostructure. Electrical characterizations of the ZnO nanowall networks grown on hBN revealed the excellent electrical insulation properties of hBN substrates. An ultraviolet photoconductor device using the vdW epitaxial ZnO nanowall networks/ hBN heterostructure was further demonstrated as an example of hBN substrate-based device applications. The architectured heteroepitaxy of semiconductors on hBN is thus expected to create many other device arrays that can be integrated on a piece of substrate with good electrical insulation for use in individual device operation.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Graphene research and applications · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (46)
Show source-provided references
1. Chung, K ., Lee, C.-H . & Yi, G.-C . Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices. Science 330, 655–657 (2010).10.1126/science.1195403 ↗
2. Kobayashi, Y ., Kumakura, K ., Akasaka, T . & Makimoto, T . Layered boron nitride as a release layer for mechanical transfer of GaN-based devices. Nature 484, 223–227 (2012).10.1038/nature10970 ↗
3. Peng, H ., Dang, W ., Cao, J ., Chen, Y ., Wu, D ., Zheng, W ., Li, H ., Shen, Z.-X . & Liu, Z . Topological insulator nanostructures for near-infrared transparent flexible electrodes. Nat. Chem. 4, 281–286 (2012).10.1038/nchem.1277 ↗
4. Lee, C.-H ., Kim, Y.-J ., Hong, Y. J ., Jeon, S.-R ., Bae, S ., Hong, B. H . & Yi, G.-C . Flexible inorganic nanostructure light-emitting diodes fabricated on graphene films. Adv. Mater. 23, 4614–4619 (2011).10.1002/adma.201102407 ↗
5. Choi, D ., Choi, M.-Y ., Choi, W. M ., Shin, H.-J ., Park, H.-K ., Seo, J.-S ., Park, J ., Yoon, S.-M ., Chae, S. J ., Lee, Y. H ., Kim, S.-W ., Choi, J.-Y ., Lee, S. Y . & Kim, J. M . Fully rollable transparent nanogenerators based on graphene electrodes. Adv. Mater. 22, 2187–2192 (2010).10.1002/adma.200903815 ↗
6. Osada, M . & Sasaki, T . Two-dimensional dielectric nanosheets: Novel nanoelectronics from nanocrystal building blocks. Adv. Mater. 24, 210–228 (2012).10.1002/adma.201103241 ↗
7. Butler, S. Z ., Hollen, S. M ., Cao, L ., Cui, Y ., Gupta, J. A ., Gutiérrez, H. R ., Heinz, T. F ., Hong, S. S ., Huang, J ., Ismach, A. F ., Johnston-Halperin, E ., Kuno, M ., Plashnitsa, V. V ., Robinson, R. D ., Ruoff, R. S ., Salahuddin, S ., Shan, J ., Shi, L ., Spencer, M. G ., Terrones, M ., Windl, W . & Goldberger, J. E . Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano 7, 2898–2926 (2013).10.1021/nn400280c ↗
8. Dean, C. R ., Young, A. F ., Meric, I ., Lee, C ., Wang, L ., Sorgenfrei, S ., Watanabe, K ., Taniguchi, T ., Kim, P ., Shepard, K. L . & Hone, J . Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 5, 722–726 (2010).10.1038/nnano.2010.172 ↗
9. Wang, H ., Taychatanapat, T ., Hsu, A ., Watanabe, K ., Taniguchi, T ., Jarillo-Herrero, P . & Palacios, T . BN/Graphene/BN transistors for RF applications. IEEE Electron Device Lett. 32, 1209–1211 (2011).10.1109/LED.2011.2160611 ↗
10. Watanabe, K ., Taniguchi, T . & Kanda, H . Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal. Nat. Mater. 3, 404–409 (2004).10.1038/nmat1134 ↗
11. Song, L ., Ci, L ., Lu, H ., Sorokin, P. B ., Jin, C ., Ni, J ., Kvashnin, A. G ., Kvashnin, D. G ., Lou, J ., Yakobson, B. I . & Ajayan, P. M . Large scale growth and characterization of atomic hexagonal boron nitride layers. Nano Lett. 10, 3209–3215 (2010).10.1021/nl1022139 ↗
12. Kim, K. K ., Hsu, A ., Jia, X ., Kim, S. M ., Shi, Y ., Dresselhaus, M ., Palacios, T . & Kong, J . Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices. ACS Nano 6, 8583–8590 (2012).10.1021/nn301675f ↗
13. Gong, Y ., Shi, G ., Zhang, Z ., Zhou, W ., Jung, J ., Gao, W ., Ma, L ., Yang, Y ., Yang, S ., You, G ., Vajtai, R ., Xu, Q ., MacDonald, A. H ., Yakobson, B. I ., Lou, J ., Liu, Z . & Ajayan, P. M . Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers. Nat. Commun. 5, 3193 (2014).10.1038/ncomms4193 ↗
14. Levendorf, M. P ., Kim, C.-J ., Brown, L ., Huang, P. Y ., Havener, R. W ., Muller, D. A . & Park, J . Graphene and boron nitride lateral heterostructures for atomically thin circuitry. Nature 488, 627–632 (2012).10.1038/nature11408 ↗
15. Koma, A . Van der Waals epitaxy for highly lattice-mismatched systems. J. Cryst. Growth 201–202, 236–241 (1999).10.1016/S0022-0248(98)01329-3 ↗
16. Utama, M. I. B ., Peng, Z ., Chen, R ., Peng, B ., Xu, X ., Dong, Y ., Wong, L. M ., Wang, S ., Sun, H . & Xiong, Q . Vertically aligned cadmium chalcogenide nanowire arrays on muscovite mica: A demonstration of epitaxial growth strategy. Nano Lett. 11, 3051–3057 (2011).10.1021/nl1034495 ↗
17. Hong, Y. J ., Yang, J. W ., Lee, W. H ., Ruoff, R. S ., Kim, K. S . & Fukui, T . Van der Waals epitaxial double heterostructure: InAs/single-layer graphene/InAs. Adv. Mater. 25, 6847–6853 (2013).10.1002/adma.201302312 ↗
18. Mohseni, P. K ., Behnam, A ., Wood, J. D ., Zhao, X ., Yu, K. J ., Wang, N. C ., Rockett, A ., Rogers, J. A ., Lyding, J. W ., Pop, E . & Li, X . Monolithic III−V nanowire solar cells on graphene via direct van der Waals epitaxy. Adv. Mater. 26, 3755–3760 (2014).10.1002/adma.201305909 ↗
19. Utama, M. I. B ., Belarre, F. J ., Magen, C ., Peng, B ., Arbiol, J . & Xiong, Q . Incommensurate van der Waals epitaxy of nanowire arrays: A case study with ZnO on muscovite mica substrates. Nano Lett. 12, 2146–2152 (2012).10.1021/nl300554t ↗
20. Hong, Y. J . & Fukui, T . Controlled van der Waals heteroepitaxy of InAs nanowires on carbon honeycomb lattices. ACS Nano 5, 7576–7584 (2011).10.1021/nn2025786 ↗
21. Zhu, Y ., Zhou, Y ., Utama, M. I. B ., de la Mata, M ., Zhao, Y ., Zhang, Q ., Peng, B ., Magen, C ., Arbiol, J . & Xiong, Q . Solution phase van der Waals epitaxy of ZnO wire arrays. Nanoscale 5, 7242–7249 (2013).10.1039/c3nr01984e ↗
22. Tomioka, K ., Yoshimura, M . & Fukui, T . A III–V nanowire channel on silicon for high-performance vertical transistors. Nature 488, 189–192 (2012).10.1038/nature11293 ↗
23. Wallentin, J ., Anttu, N ., Asoli, D ., Huffman, M ., Åberg, I ., Magnusson, M. H ., Siefer, G ., Fuss-Kailuweit, P ., Dimroth, F ., Witzigmann, B ., Xu, H. Q ., Samuelson, L ., Deppert, K . & Borgström, M. T . InP nanowire array solar cells achieving 13.8% efficiency by exceeding the ray optics limit. Science 339, 1057–1060 (2013).10.1126/science.1230969 ↗
24. Kanungo, P. D ., Schmid, H ., Björk, M. T ., Gignac, L. M ., Breslin, C ., Bruley, J ., Bessire, C. D . & Riel, H . Selective area growth of III–V nanowires and their heterostructures on silicon in a nanotube template: towards monolithic integration of nano-devices. Nanotechnology 24, 225304 (2013).10.1088/0957-4484/24/22/225304 ↗
25. Dai, X ., Nguyen, B.-M ., Hwang, Y ., Soci, C . & Dayeh, S. A . Novel heterogeneous integration technology of III–V layers and InGaAs finFETs to silicon. Adv. Funct. Mater. 24, 4420–4426 (2014).10.1002/adfm.201400105 ↗
26. Hong, Y. J ., Lee, C.-H ., Yoon, A ., Kim, M ., Seong, H.-K ., Chung, H. J ., Sone, C ., Park, Y. J . & Yi, G.-C . Visible-color-tunable light-emitting diodes. Adv. Mater. 23, 3284–3288 (2011).10.1002/adma.201100806 ↗
27. Wang, Y . Electronic properties of two-dimensional hydrogenated and semihydrogenated hexagonal boron nitride sheets. Phys. Status Solidi-R 4, 34–36 (2010).10.1002/pssr.200903374 ↗
28. Jo, J ., Yoo, H ., Park, S.-I ., Park, J. B ., Yoon, S ., Kim, M . & Yi, G.-C . High-resolution observation of nucleation and growth behavior of nanomaterials using a graphene template. Adv. Mater. 26, 2011–2015 (2014).10.1002/adma.201304720 ↗
29. Kresse, G . & Furthmüller, J . Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B Condens. Matter 54, 11169–11186 (1996).10.1103/PhysRevB.54.11169 ↗
30. Perdew, J. P ., Burke, K . & Ernzerhof, M . Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865–3868 (1996).10.1103/PhysRevLett.77.3865 ↗
31. Grimme, S . Semiempirical GGA-type density functional constructed with a long-range dispersion correction. J. Comput. Chem. 27, 1787–1799 (2006).10.1002/jcc.20495 ↗
32. Ponce, F. A ., Major, J. S ., Plano, W. E . & Welch, D. F . Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers. Appl. Phys. Lett. 65, 2302–2304 (1994).10.1063/1.112724 ↗
33. Grandjean, N ., Massies, J ., Vennéguès, P ., Laügt, M . & Leroux, M . Epitaxial relationships between GaN and Al2O3(0001) substrates. Appl. Phys. Lett. 70, 643–645 (1997).10.1063/1.118205 ↗
34. Narayan, J ., Dovidenko, K ., Sharma, A. K . & Oktyabrsky, S . Defects and interfaces in epitaxial ZnO/α-Al2O3 and AlN/ZnO/α-Al2O3 heterostructures. J. Appl. Phys. 84, 2597–2601 (1998).10.1063/1.368440 ↗
35. Munshi, A. M ., Dheeraj, D. L ., Fauske, V. T ., Kim, D.-C ., van Helvoort, A. T. J ., Fimland, B.-O . & Weman, H . Vertically aligned GaAs nanowires on graphite and few-layer graphene: Generic model and epitaxial growth. Nano Lett. 12, 4570–4576 (2012).10.1021/nl3018115 ↗
36. Wallentin, J ., Kriegner, D ., Stangl, J . & Borgström, M. T . Au-seeded growth of vertical and in-plane III–V nanowires on graphite substrates. Nano Lett. 14, 1707–1713 (2014).10.1021/nl403411w ↗
37. Djurisic, A. B . & Leung, Y. H . Optical properties of ZnO nanostructures. Small 2, 944–961 (2006).10.1002/smll.200600134 ↗
38. Park, W. I ., Yi, G.-C ., Kim, M . & Pennycook, S. J . ZnO nanoneedles grown vertically on Si substrates by non-catalytic vapor-phase epitaxy. Adv. Mater. 14, 1841–1843 (2002).10.1002/adma.200290015 ↗
39. Wang, X ., Yang, S ., Wang, J ., Li, M ., Jiang, X ., Du, G ., Liu, X . & Chang, R. P. H . Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition. J. Cryst. Growth 226, 123–129 (2001).10.1016/S0022-0248(01)01367-7 ↗
40. Kim, S ., Park, H ., Nam, G ., Yoon, H ., Kim, J. S ., Kim, J. S ., Son, J. S ., Lee, S. H . & Leem, J. Y . Temperature-dependent photoluminescence of boron-doped ZnO nanorods. Bull. Korean Chem. Soc. 34, 3335–3339 (2013).10.5012/bkcs.2013.34.11.3335 ↗
41. Trushin, O. S ., Kokko, K ., Salo, P. T ., Hergert, W . & Kotrla, M . Step roughening effect on adatom diffusion. Phys. Rev. B 56, 12135–12138 (1997).10.1103/PhysRevB.56.12135 ↗
42. Pierre-Louis, O ., D'Orsogna, M. R . & Einstein, T. L . Edge diffusion during growth: The kink Ehrlich-Schwoebel effect and resulting instabilities. Phys. Rev. Lett. 82, 3661–3664 (1999).10.1103/PhysRevLett.82.3661 ↗
43. Hong, Y. J ., Jung, H. S ., Yoo, J ., Kim, Y.-J ., Lee, C.-H ., Kim, M . & Yi, G.-C . Shape-controlled nanoarchitectures using nanowalls. Adv. Mater. 21, 222–226 (2009).10.1002/adma.200703168 ↗
44. Li, H ., Cao, J ., Zheng, W ., Chen, Y ., Wu, D ., Dang, W ., Wang, K ., Peng, H . & Liu, Z . Controlled synthesis of topological insulator nanoplate arrays on mica. J. Am. Chem. Soc. 134, 6132–6135 (2012).10.1021/ja3021395 ↗
45. Lin, M ., Wu, D ., Zhou, Y ., Huang, W ., Jiang, W ., Zheng, W ., Zhao, S ., Jin, C ., Guo, Y ., Peng, H . & Liu, Z . Controlled growth of atomically thin In2Se3 flakes by van der Waals epitaxy. J. Am. Chem. Soc. 135, 13274–13277 (2013).10.1021/ja406351u ↗
46. Lee, C.-H ., Yi, G.-C ., Zuev, Y. M . & Kim, P . Thermoelectric power measurements of wide band gap semiconducting nanowires. Appl. Phys. Lett. 94, 022106 (2009).10.1063/1.3067868 ↗