Multilevel nonvolatile transistor memories using a star-shaped poly((4-diphenylamino)benzyl methacrylate) gate electret
Source abstract
Abstract
Multilevel nonvolatile transistor memories were fabricated using star-shaped poly((4-diphenylamino)benzyl methacrylate) (star-PTPMA) electret dielectric for charge storage and N,N 0 -bis(2-phenylethyl)perylene-3,4,9,10-bis(dicarboximide) (BPE-PTCDI) as an n-type semiconductor. Charges were controllably stored by applying a negative voltage bias, detected by shifting the threshold voltage, and this device retained the digital states even when the supplied voltage was removed. The multilevel data storage characteristics obtained by applying different gate voltages suggested that the device possessed nonvolatile write-many-read-many (WMRM) memory behaviors. The electronic charges were transferred and permanently accumulated in the gate electret from the restricting region of the star-PTPMA with well-defined charge trapping elements, but not in the case of linear-PTPMA. P-type pentacene was also used as a semiconductor layer to clarify the operating mechanism under a gate electric field. Our results demonstrated the significance of the architecture effect of the polymer electrets for nonvolatile organic transistor memory devices and their potentials in high-density data storage.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Luminescence and Fluorescent Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (39)
Show source-provided references
1. Guo, Y., Yu, G. & Liu, Y. Functional organic field-effect transistors. Adv. Mater. 22, 4427–4447 (2010).10.1002/adma.201000740 ↗
2. Leong, W. L., Mathews, N., Tan, B., Vaidyanathan, S., Dotz, F. & Mhaisalkar, S. Towards printable organic thin film transistor based flash memory devices. J. Mater. Chem. 21, 5203–5214 (2011).10.1039/c0jm03974h ↗
3. Ling, Q.-D., Liaw, D.-J., Zhu, C., Chan, D. S.-H., Kang, E.-T. & Neoh, K.-G. Polymer electronic memories: materials, devices and mechanisms. Prog. Polym. Sci. 33, 917–978 (2008).10.1016/j.progpolymsci.2008.08.001 ↗
4. Heremans, P., Gelinck, G. H., Muller, R. M., Baeg, K.-J., Kim, D.-Y. & Noh, Y.-Y. Polymer and organic nonvolatile memory devices. Chem. Mater. 23, 341–358 (2011).10.1021/cm102006v ↗
5. Lee, S.-J. Progress in non-volatile memory devices based on nanostructured materials and nanofabrication. J. Mater. Chem. 21, 14097–14112 (2011).10.1039/c1jm11050k ↗
6. Yang, Y., Ouyang, J., Ma, L., Tseng, R. J. H. & Chu, C. W. Electrical switching and bistability in organic/polymeric thin films and memory devices. Adv. Funct. Mater. 16, 1001–1014 (2006).10.1002/adfm.200500429 ↗
7. Liu, C.-L. & Chen, W.-C. Donor–acceptor polymers for advanced memory device applications. Polym. Chem. 2, 2169–2174 (2011).10.1039/c1py00189b ↗
8. Fang, Y.-K., Liu, C.-L., Li, C., Lin, C. J., Mezzenga, R. & Chen, W.-C. Synthesis, morphology, and properties of poly(3-hexylthiophene)-block-poly(vinylphenyl oxadiazole) donor–acceptor rod–coil block copolymers and their memory device applications. Adv. Funct. Mater. 20, 3012–3024 (2010).10.1002/adfm.201000879 ↗
9. Chen, J.-C., Liu, C.-L., Sun, Y.-S., Tung, S.-H. & Chen, W.-C. Tunable electrical memory characteristics by the morphology of self-assembled block copolymers:PCBM nanocomposite films. Soft Matter 8, 526–535 (2012).10.1039/C1SM06622F ↗
10. Egginger, M., Bauer, S., Schwodiauer, R., Neugebauer, H. & Sariciftci, N. S. Current versus gate voltage hysteresis in organic field effect transistors. Monatsh. Chem. 140, 735–750 (2009).10.1007/s00706-009-0149-z ↗
11. Kang, N.-G., Cho, B., Kang, B.-G., Song, S., Lee, T. & Lee, J.-S. Structural and electrical characterization of a block copolymer-based unipolar nonvolatile memory device. Adv. Mater. 24, 385–390 (2012).10.1002/adma.201103862 ↗
12. Hahm, S. G., Kang, N.-G., Kwon, W., Kim, K., Ko, Y.-K., Ahn, S., Kang, B.-G., Chang, T., Lee, J.-S. & Ree, M. Programmable bipolar and unipolar nonvolatile memory devices based on poly(2-(N-carbazolyl)ethyl methacrylate) end-capped with fullerene. Adv. Mater. 24, 1062–1066 (2012).10.1002/adma.201103647 ↗
13. Katz, H. E., Hong, X. M., Dodabalapur, A. & Sarpreshkar, R. Organic field-effect transistors with polarizable gate insulators. J. Appl. Phys. 91, 1572–1576 (2002).10.1063/1.1427136 ↗
14. Baeg, K.-J., Noh, Y.-Y., Ghim, J., Kang, S.-J., Lee, H. & Kim, D.-Y. Organic non-volatile memory based on pentacene field-effect transistors using a polymeric gate electret. Adv. Mater. 18, 3179–3183 (2006).10.1002/adma.200601434 ↗
15. Hung, C., West, J. M. & Katz, H. E. Organic field-effect transistors and unipolar logic gates on charged electrets from spin-on organosilsesquioxane resins. Adv. Funct. Mater. 17, 142–153 (2007).10.1002/adfm.200600690 ↗
16. Baeg, K.-J., Noh, Y.-Y., Ghim, J., Lim, B. & Kim, D.-Y. Polarity effects of polymer gate electrets on non-volatile organic field-effect transistor memory. Adv. Funct. Mater. 18, 3678–3685 (2008).10.1002/adfm.200800378 ↗
17. Guo, Y., Di, C.-A., Ye, S., Sun, X., Zheng, J., Wen, Y., Wu, W., Yu, G. & Liu, Y. Multibit storage of organic thin-film field-effect transistors. Adv. Mater. 21, 1954–1959 (2009).10.1002/adma.200802430 ↗
18. Hsu, J.-C., Lee, W.-Y., Wu, H.-C., Sugiyama, K., Hirao, A. & Chen, W.-C. Nonvolatile memory based on pentacene organic field-effect transistors with polystyrene para-substituted oligofluorene pendent moieties as polymer electrets. J. Mater. Chem. 22, 5820–5827 (2012).10.1039/c2jm16039k ↗
19. Chou, Y.-H., You, N.-H., Kurosawa, T., Lee, W.-Y., Higashihara, T., Ueda, M. & Chen, W.-C. Thiophene and selenophene donor-acceptor polyimides as polymer electrets for nonvolatile transistor memory devices. Macromolecules 45, 6946–6956 (2012).10.1021/ma301326r ↗
20. Singh, Th. B., Marjanovic, N., Matt, G. J., Sariciftci, N. S., Schwodiauer, R. & Bauer, S. Nonvolatile organic field-effect transistor memory element with a polyemric gate electret. Appl. Phys. Lett. 85, 5409–5411 (2004).10.1063/1.1828236 ↗
21. Schroeder, R., Majewski, L. A. & Grell, M. All-organic permanent memory transistor using an amorphous, spin-cast ferroelectric-like gate insulator. Adv. Mater. 16, 633–636 (2004).10.1002/adma.200306187 ↗
22. Naber, R. C. G., Tanase, C., Blom, P. W. M., Gelinck, G. H., Marsman, A. W., Touwslager, F. J., Setayesh, S. & Leeuw, D. M. de High-performance solution-processed polymer ferroelectric field-effect transistors. Nat. Mater. 4, 243–248 (2005).10.1038/nmat1329 ↗
23. Lim, S. H., Rastogi, A. C. & Desu, S. B. Electrical properties of metal-ferroelectric-insulator-semiconductor structures based on ferroelectric polyvinylidene fluoride copolymer film gate for nonvolatile random access memory application. J. Appl. Phys. 96, 5673–5682 (2004).10.1063/1.1785836 ↗
24. Sekitani, T., Yokota, T., Zschieschang, U., Klauk, H., Bauer, S., Takeuchi, K., Takamiya, M., Sakurai, T. & Someya, T. Organic nonvolatile memory transistors for flexible sensor arrays. Science 326, 1516–1518 (2009).10.1126/science.1179963 ↗
25. Leong, W. L., Mathews, N., Mhaisalkar, S., Lam, Y. M., Chen, T. & Lee, P. S. Micellar poly(styrene-b-4-vinylpyridine)-nanoparticle hybrid system for non-volatile organic transistor memory. J. Mater. Chem. 19, 7354–7361 (2009).10.1039/b911493a ↗
26. Baeg, K.-J., Noh, Y.-Y., Sirringhaus, H. & Kim, D.-Y. Controllable shifts in threshold voltage of top-gate polymer field-effect transistors for applications in organic nano floating gate memory. Adv. Funct. Mater. 20, 224–230 (2010).10.1002/adfm.200901677 ↗
27. Wei, Q., Lin, Y., Anderson, E. R., Briseno, A. L., Gido, S. P. & Watkins, J. J. Additive-driven assembly of block copolymer-nanoparticle hyrid materials for solution processable flaoting gate memory. ACS Nano 6, 1118–1194 (2012).
28. Burkhardt, M., Jedaa, A., Novak, M., Ebel, A., Voitchovsky, K., Stellacci, F., Hirsch, A. & Halik, M. Concept of a molecular charge storage dielectric layer for organic thin-film memory transistors. Adv. Mater. 22, 2525–2528 (2010).10.1002/adma.201000030 ↗
29. Lee, J.-S., Kim, Y.-M., Kwon, J.-H., Sim, J. S., Shin, H., Sohn, B.-H. & Jia, Q. Multilevel data storage memory devices based on the controlled capacitive coupling of trapped electrons. Adv. Mater. 23, 2064–2068 (2011).10.1002/adma.201004150 ↗
30. Li, H., Xu, Q., Li, N., Sun, R., Ge, J., Lu, J., Gu, H. & Yan, F. A small-molecule-based ternary data-storage device. J. Am. Chem. Soc. 132, 5542–5543 (2010).10.1021/ja910243f ↗
31. Pellegrino, L., Manca, N., Kani, T., Tanaka, H., Biasotti, M., Bellingeri, E., Siri, A. S. & Marre, D. Multistate memory devices based on free-standing VO2/TiO2 microstructures driven by joule self-heating. Adv. Mater. 24, 2929–2934 (2012).10.1002/adma.201104669 ↗
32. Hsu, J.-C., Chen, Y., Kakuchi, T. & Chen, W.-C. Synthesis of linear and star-shaped poly[4-(diphenylamino)benzyl methacrylate]s by group transfer polymerization and their electrical memory device applications. Macromolecules 44, 5168–5177 (2011).10.1021/ma2006377 ↗
33. Ling, M. M., Erk, P., Gomez, M., Koenemann, M., Locklin, J. & Bao, Z. Air-stable n-channel organic semiconductors based on perylene diimide derivatives without strong electron withdrawing groups. Adv. Mater. 19, 1127–1123 (2007).10.1002/adma.200601705 ↗
34. Park, B., Paoprasert, P., In, I., Zwickey, J., Colavita, P. E., Hamers, R. J., Gopalan, P. & Evans, P. G. Functional self-assembled monolayers for optimized photoinduced charge transfer in organic field effect transistors. Adv. Mater. 19, 4353–4357 (2007).10.1002/adma.200602875 ↗
35. Singh, T. B., Meghdadi, F., Gunes, S., Marjanovic, N., Horowitz, G., Lang, P., Bauer, S. & Sariciftci, N. S. High-performance ambipolar pentacene organic field-effect transistors on poly(vinyl alcohol) organic gate dielectric. Adv. Mater. 17, 2315–2320 (2005).10.1002/adma.200501109 ↗
36. Goldman, C., Krellner, C., Pernstich, K. P., Hass, S., Gundlach, D. J. & Batlogg, B. Determination of the interface trap density of rubrene single-crystal field-effect transistors and comparison to the bulk trap density. J. Appl. Phys. 99, 034507 (2006).10.1063/1.2170421 ↗
37. Park, M. H., Huh, J. O., Do, Y. & Lee, M. H. Synthesis and properties of polyethylene with side-chain triphenylamines as hole-transporting materials. J. Polym. Sci. Polym. Chem. 46, 5816–5825 (2008).10.1002/pola.22895 ↗
38. You, J., Yoon, J. A., Kim, J., Huang, C.-F., Matyjaszewski, K. & Kim, E. Excimer emission from self-assembly of fluorescent diblock copolymer prepared by atom transfer radical polymerization. Chem. Mater. 22, 4426–4434 (2010).10.1021/cm1011026 ↗
39. Huang, Y., Lam, J. W. Y. & Tang, B. Z. Aggregation-induced emission. Chem. Soc. Rev. 40, 5361–5388 (2011).10.1039/c1cs15113d ↗