THE FORMATION OF 90° INTERFACE DISLOCATIONS IN STRAINED (001)SEMICONDUCTOR HETEROJUNCTIONS
Source abstract
Abstract
Abstract A mechanism is proposed for the production of pure edge strain-relieving interface dislocations in the SiGe/Si (001) system. Electron microscope observations consistent with the mechanism are presented.
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and interfaces
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References (11)
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