High-Performance Ammonia Gas Sensor Based on a Catalytic Ruthenium- Gated Field-Effect Transistor

The catalytic performance of ruthenium (Ru) in the synthesis and decomposition of ammonia (NH 3 ) has attracted extensive attention and research. Considering its selective adsorption and excellent catalytic effect toward NH 3, it holds significant potential in the field of ammonia detection. In this study, we present a high-performance NH 3 sensor that was based on a catalytic metal gate field-effect transistor (FET) utilizing Ru nanoparticles as the sensitive gate (Ru-FET). The sensor exhibits a high response of 11.3% to 1 ppm of NH 3 at room temperature, with quick response and recovery processes of 8 and 85 s, respectively. Meanwhile, the sensor possesses a detection range of 0.4–20 ppm along with good repeatability and selectivity. The exceptional performance of the Ru-FET sensor suggests the potential of judiciously combining sensitive materials and sensor structures to manufacture high-performance NH 3 sensors operating at room temperature.