journal article·2021-01-22Open access

Highly Tensile-Strained Self-Assembled Ge Quantum Dots on InP Substrates for Integrated Light Sources

Qimiao Chen, Liyao Zhang, Yuxin Song, Xiren Chen, Sebastian Koelling, Zhenpu Zhang, Yaoyao Li, Paul M. Koenraad, Jun Shao, Chuan Seng Tan, Shumin Wang, Qian Gong

ACS Applied Nano Materials· Volume 4· Issue 1

Abstract

Highly tensile-strained Ge quantum dots (TS-Ge-QDs) emitting structures with different size were successfully grown on InP substrates by molecular beam epitaxy. Dislocation-free TS-Ge-QDs were observed by transmission electron microscopy. Finite element modeling indicates a maximum tensile strain of 4.5% in the Ge QDs, which is much larger than the required strain to achieve direct band gap conversion of Ge based on theoretical prediction. Photoluminescence (PL) from a direct band-gap-like transition of TS-Ge-QDs with a peak energy of 0.796 eV was achieved and confirmed by the etch depth-dependent PL, temperature-dependent PL, and excitation-power-dependent PL. In addition, a strong defect-related peak of 1 eV was observed at room temperature. The band structure of the TS-Ge-QDs emitting structures was calculated to support the experimental results of PL spectra. Achieving PL from direct band-gap-like transitions of TS-Ge-QDs provides encouraging evidence of this promising highly tensile strained semiconductor-nanostructure-based platform for future photonics applications such as integrated light sources.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Photonic and Optical Devices · Semiconductor Quantum Structures and Devices · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 200050 Shanghai, China

School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore

Department of Physics, University of Shanghai for Science and Technology, 200093 Shanghai, China

State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China

Photonics and Semiconductor Nanophysics, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg, Sweden

Funding

National Research Foundation Singapore · Science and Technology Commission of Shanghai Municipality · National Natural Science Foundation of China

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